Device containing metal oxide-containing layers
US-2022376180-A1 · Nov 24, 2022 · US
US12550600B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12550600-B2 |
| Application number | US-202018037476-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 3, 2020 |
| Priority date | Dec 3, 2020 |
| Publication date | Feb 10, 2026 |
| Grant date | Feb 10, 2026 |
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A method for manufacturing a light-emitting element includes forming a first light-emitting layer by applying a first quantum dot solution containing first quantum dots, forming a first resist layer by applying a first photosensitive resin composition onto the first light-emitting layer, exposing the first resist layer to light in a predetermined pattern, and performing a pattern formation of developing the first resist layer with a developing solution to form a patterned first resist layer, and processing the first light-emitting layer with a treatment liquid using the patterned first resist layer as a mask to form a patterned first light-emitting layer.
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The invention claimed is: 1 . A method for manufacturing a light-emitting element, the method comprising: forming a first light-emitting layer by applying a first quantum dot solution containing first quantum dots; forming a first resist layer by applying a first photosensitive resin composition onto the first light-emitting layer; exposing the first resist layer to light in a predetermined pattern; and performing a pattern formation of developing the first resist layer with a developing solution to form a patterned first resist layer, and processing the first light-emitting layer with a treatment liquid using the patterned first resist layer as a mask to form a patterned first light-emitting layer. 2 . The method for manufacturing a light-emitting element according to claim 1 , wherein the treatment liquid is the developing solution. 3 . The method for manufacturing a light-emitting element according to claim 2 , wherein the developing solution contains a surfactant. 4 . The method for manufacturing a light-emitting element according to claim 1 , wherein the first photosensitive resin composition is a positive photosensitive resin composition, the method further includes forming at least one first function layer on the patterned first resist layer, and when the first resist layer is patterned in the pattern formation, the at least one first function layer is lifted off to form at least one patterned first function layer. 5 . The method for manufacturing a light-emitting element according to claim 1 , wherein the first photosensitive resin composition contains a functional material. 6 . The method for manufacturing a light-emitting element according to claim 5 , wherein the functional material contains second quantum dots. 7 . The method for manufacturing a light-emitting element according to claim 5 , wherein the functional material contains charge transport nanoparticles. 8 . The method for manufacturing a light-emitting element according to claim 1 , the method further comprising baking and curing the patterned first resist layer. 9 . The method for manufacturing a light-emitting element according to claim 8 , wherein a second first light-emitting layer containing second first quantum dots having a light emission color different from that of the first quantum dots is formed on the baked first resist layer and then the forming of the first resist layer, the exposing, and the pattern formation are further performed. 10 . The method for manufacturing a light-emitting element according to claim 1 , the method further comprising forming at least one second function layer on the first light-emitting layer before forming the first resist layer, wherein the at least one second function layer is processed with a treatment liquid using the patterned first resist layer as a mask to be patterned in the pattern formation. 11 . A method for manufacturing a light-emitting element, the method comprising: forming a lift-off resist layer by applying a positive photosensitive resin composition; exposing the lift-off resist layer to light in a predetermined pattern; developing the lift-off resist layer to form a patterned lift-off resist layer; applying a first quantum dot solution containing first quantum dots onto the patterned lift-off resist layer to form a first light-emitting layer; applying a negative photosensitive resin composition onto the first light-emitting layer to form a first resist layer; and performing a pattern formation of exposing an entire surface of the first resist layer to light, and then lifting off the first light-emitting layer and the first resist layer formed on the patterned lift-off resist layer by processing the patterned lift-off resist layer with a developing solution to pattern the first light-emitting layer and the first resist layer. 12 . The method for manufacturing a light-emitting element according to claim 11 , the method further comprising forming at least one first function layer on the first resist layer, wherein, when the patterned lift-off resist layer is processed with the developing solution in the pattern formation, the at least one first function layer formed on the patterned lift-off resist layer is lifted off to pattern the at least one first function layer. 13 . The method for manufacturing a light-emitting element according to claim 11 , the method further comprising forming at least one second function layer at a position on the patterned lift-off resist layer and under the first light-emitting layer, wherein, when the patterned lift-off resist layer is processed with the developing solution in the pattern formation, the at least one second function layer formed on the patterned lift-off resist layer is lifted off to pattern the at least one second function layer.
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