Display device including an optical sensor on an area overlapping an active area of a display panel

Patent metadata

Field	Value
Publication number	US-12550515-B2
Application number	US-202418732363-A
Country	US
Kind code	B2
Filing date	Jun 3, 2024
Priority date	Dec 18, 2019
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A display device in one example includes a display panel comprising a first area including at least one first subpixel and a second area including at least one second subpixel, a first driving thin film transistor disposed in the at least one first subpixel, and a second driving thin film transistor disposed in the at least one second subpixel. The number of the at least one first subpixel disposed per a unit area in the first area is greater than the number of the at least one second subpixel disposed per a unit area in the second area. Further, the width of a channel region of the second driving thin film transistor is greater than the width of a channel region of the first driving thin film transistor.

First claim

What is claimed is:

1 . A display device, comprising:
a display panel comprising a first area including at least one first subpixel and a second area including at least one second subpixel; a first driving thin film transistor disposed in the at least one first subpixel; a second driving thin film transistor disposed in the at least one second subpixel; and an electrode pattern for blocking an external light disposed on an area including an area overlapping a channel region of the first driving thin film transistor, wherein a number of the at least one first subpixel disposed per a unit area in the first area is greater than a number of the at least one second subpixel disposed per a unit area in the second area, and wherein a width of a channel region of the second driving thin film transistor is greater than a width of the channel region of the first driving thin film transistor.

2 . The display device of claim 1 , wherein the at least one first subpixel and the at least one second subpixel are disposed on an area that a gate line and a data line are crossed, and each of the at least one first subpixel and the at least one second subpixel comprises an organic light emitting element.

3 . The display device of claim 1 , wherein a length of the channel region of the second driving thin film transistor is shorter than a length of the channel region of the first driving thin film transistor.

4 . The display device of claim 1 , wherein the second driving thin film transistor comprises a top gate electrode positioned on the channel region of the second driving thin film transistor and a bottom gate electrode positioned under the channel region of the second driving thin film transistor.

5 . The display device of claim 4 , wherein at least a part of a boundary of the channel region of the second driving thin film transistor is overlapped to a boundary of the top gate electrode.

6 . The display device of claim 1 , wherein the first area has a first resolution and the second area has a second resolution lower than the first resolution.

7 . The display device of claim 1 , further comprising an optical sensor positioned under the second driving thin film transistor in the second area.

8 . The display device of claim 1 , wherein a ratio of a width to a length of the channel region of the second driving thin film transistor is greater than a ratio of a width to a length of the channel region of the first driving thin film transistor.

9 . The display device of claim 1 , wherein when same data voltages are supplied to the at least one first subpixel and the at least one second subpixel, a luminance shown by the at least one second subpixel is higher than a luminance shown by the at least one first subpixel.

10 . The display device of claim 1 , wherein the electrode pattern is a floating state, or a different signal from a signal supplied to a gate electrode of the first driving thin film transistor is supplied to the electrode pattern.

11 . The display device of claim 1 , wherein the electrode pattern is electrically connected to a source electrode or a drain electrode of the first driving thin film transistor.

12 . The display device of claim 1 , wherein the second driving thin film transistor comprises a top gate electrode positioned on the channel region of the second driving thin film transistor and a bottom gate electrode positioned under the channel region of the second driving thin film transistor, and wherein the bottom gate electrode is made of a same material with the electrode pattern.

13 . The display device of claim 1 , wherein a constant voltage is supplied to the electrode pattern.

14 . A display device, comprising:
a display panel comprising a first area where at least one first subpixel is disposed and a second area where at least one second subpixel is disposed, wherein the second area is overlapped to at least one optical sensor; a first driving thin film transistor disposed in the at least one first subpixel; a second driving thin film transistor disposed in the at least one second subpixel; an electrode pattern for blocking an external light disposed on an area including an area overlapping a channel region of the first driving thin film transistor; a proximity sensor for proximity sensing, which is positioned under the second driving thin film transistor in the second area; and a light source for emitting a light for proximity sensing, which is positioned in a non-active area outside of the first and the second areas, wherein a shape of a gate electrode of the second driving thin film transistor is different from a shape of a gate electrode of the first driving thin film transistor.

15 . The display device of claim 14 , wherein the at least one optical sensor is positioned on an opposite side of a face on which an image is displayed.

16 . The display device of claim 14 , wherein the at least one optical sensor comprises at least one of a camera sensor and a proximity sensor.

Assignees

• Lg Display Co Ltd

Inventors

• Ko Sunwook
• Kim Hyunjin
• Oh Kummi
• Ko Seunghyo

Classifications

• H10K50/805

  Electrodes · CPC title

• H10K59/35

  comprising red-green-blue [RGB] subpixels · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10K59/60

  OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes · CPC title