Print recognition substrate and print recognition apparatus

Patent metadata

Field	Value
Publication number	US-12550467-B2
Application number	US-202118249501-A
Country	US
Kind code	B2
Filing date	Jun 3, 2021
Priority date	Jun 3, 2021
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A print recognition substrate and a print recognition apparatus. The print recognition substrate includes a base substrate, which includes a data line and a gate line crossing each other; a light shielding structure, located on the base substrate, and including a metal layer, and an orthographic projection of the light shielding structure on the base substrate does not overlap with orthographic projections of the data line and the gate line on the base substrate; a photoelectric conversion structure, located on the side of the light shielding structure away from the base substrate, and an orthographic projection of the photoelectric conversion structure on the base substrate is located in an orthographic projection of the light shielding structure on the base substrate, and a distance between an edge of the photoelectric conversion structure and an edge of the light shielding structure is less than or equal to 3 μm.

First claim

What is claimed is:

1 . A print recognition substrate, comprising:
a base substrate, comprising a data line and a gate line crossing each other; a light shielding structure, located on the base substrate, and comprising at least one metal layer, wherein an orthographic projection of the light shielding structure on the base substrate does not overlap with orthographic projections of the data line and the gate line on the base substrate; a photoelectric conversion structure, located on a side of the light shielding structure away from the base substrate, wherein an orthographic projection of the photoelectric conversion structure on the base substrate is located in the orthographic projection of the light shielding structure on the base substrate, and a distance between an edge of the photoelectric conversion structure and an edge of the light shielding structure is less than or equal to 3 μm.

2 . The print recognition substrate of claim 1 , wherein the light shielding structure comprises a first electrode, and the first electrode is in the same layer as the gate line; or
the light shielding structure comprises a second electrode, and the second electrode is in the same layer as the data line; or the light shielding structure comprises the first electrode and the second electrode, the first electrode is in the same layer as the gate line, the second electrode is in the same layer as the data line, and in an extending direction of the gate line, an orthographic projection of the edge of the photoelectric conversion structure on the base substrate is located in an orthographic projection of the first electrode on the base substrate, and in an extending direction of the data line, an orthographic projection of the edge of the photoelectric conversion structure on the base substrate is located in an orthographic projection of the second electrode on the base substrate.

3 . The print recognition substrate of claim 2 , wherein both ends of an edge of the photoelectric conversion structure close to the data line and both ends of an edge of the photoelectric conversion structure away from the data line are provided with chamfers recessed toward a center of the photoelectric conversion structure.

4 . The print recognition substrate of claim 3 , wherein a maximum distance between an orthographic projection of an edge of a chamfer on the base substrate and an orthographic projection of an edge of the second electrode on the base substrate is not less than 0 μm to 3 μm, and a maximum distance between an orthographic projection of an edge of the chamfer on the base substrate and an orthographic projection of an edge of the first electrode on the base substrate is not less than 0 μm to 3 μm.

5 . The print recognition substrate of claim 2 , wherein the orthographic projection of the photoelectric conversion structure on the base substrate has a first overlap area with the orthographic projection of the second electrode on the base substrate, and a ratio of the first overlap area to an area of the orthographic projection of the second electrode on the base substrate ranges from 0.6 to 0.8.

6 . The print recognition substrate of claim 2 , wherein the orthographic projection of the photoelectric conversion structure on the base substrate has a second overlap area with the orthographic projection of the first electrode on the base substrate, and a ratio of the second overlap area to an area of the orthographic projection of the first electrode on the base substrate ranges from 0.7 to 0.9.

7 . The print recognition substrate of claim 2 , wherein the orthographic projection of the first electrode on the base substrate has a third overlap area with the orthographic projection of the second electrode on the base substrate, and a ratio of the third overlap area to an area of the orthographic projection of the second electrode on the base substrate ranges from 0.5 to 0.8; or
the orthographic projection of the first electrode on the base substrate has a third overlap area with the orthographic projection of the second electrode on the base substrate, and a ratio of the third overlap area to an area of the orthographic projection of the first electrode on the base substrate ranges from 0.6 to 0.8.

8 . The print recognition substrate of claim 2 , wherein a minimum distance between the second electrode and the data line is a first distance, a second distance is between the orthographic projection of the first electrode on the base substrate and the orthographic projection of the data line on the base substrate, a minimum distance between the orthographic projection of the photoelectric conversion structure on the base substrate and the orthographic projection of the data line on the base substrate is a third distance, and the third distance is greater than the second distance and less than the first distance.

9 . The print recognition substrate of claim 8 , wherein the first distance d 1 , the second distance d 2 , and the third distance d 3 satisfy: d 1 : d 2 : d 3 ranges from 5:2:3 to 5:2:4.9.

10 . The print recognition substrate of claim 8 , wherein the first distance ranges from 7 μm to 9 μm, the second distance ranges from 3 μm to 5 μm, and the third distance ranges from 5 μm to 7 μm.

11 . The print recognition substrate of claim 2 , wherein a minimum distance between the orthographic projection of the second electrode on the base substrate and the orthographic projection of the gate line on the base substrate is a fourth distance, a minimum distance between the first electrode and the gate line is a fifth distance, a minimum distance between the orthographic projection of the photoelectric conversion structure on the base substrate and the orthographic projection of the gate line on the base substrate is a sixth distance, and the sixth distance is greater than the fourth distance and less than the fifth distance.

12 . The print recognition substrate of claim 11 , wherein the fourth distance d 4 , the fifth distance d 5 , and the sixth distance d 6 satisfy: d 4 : d 5 : d 6 ranges from 2:6: 5 to 2:6: 4.

13 . The print recognition substrate of claim 11 , wherein the fourth distance ranges from 2 μm to 5 μm, the fifth distance ranges from 7 μm to 9 μm, and the sixth distance ranges from 5 μm to 7 μm.

14 . The print recognition substrate of claim 2 , further comprising a transistor, wherein a gate of the transistor is in the same layer as the gate line, a first pole and a second pole of the transistor are in the same layer as the data line;
the gate of the transistor is electrically connected to the gate line, the first pole of the transistor is electrically connected to the data line, and the second pole of the transistor is electrically connected to the second electrode; and an orthographic projection of the transistor on the base substrate does not overlap with the orthographic projection of the first electrode on the base substrate and the orthographic projection of the photoelectric conversion structure on the base substrate.

15 . The print recognition substrate of claim 14 , wherein a channel region of the transistor extends in the first direction; an edge of the data line adjacent to the channel region of the transistor is multiplexed as the first pole of the transistor, and the second pole of the transistor is disposed opposite the first pole of the transistor on one side of the channel region; or
a channel region of the transistor is in an inverted L-shape, the first pole of the transistor is integrated with the data line, and the first pole of the transistor is on a side of the data line close to the channel re

Assignees

• Beijing Boe Sensor Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Feng Yajie
• Li Cheng
• Geng Yue
• Wang Kuiyuan
• Li Zhonghuan
• Dai Yi
• Qi Chaoyang
• Li Zefei
• Li Xiaoguan
• Xi Congcong

Classifications

• H10F39/802

  Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title

• G06V40/1318 Primary

  using electro-optical elements or layers, e.g. electroluminescent sensing · CPC title

• G06V10/145

  Illumination specially adapted for pattern recognition, e.g. using gratings · CPC title

• H10F39/8057 Primary

  Optical shielding · CPC title