Semiconductor device

Patent metadata

Field	Value
Publication number	US-12550419-B2
Application number	US-202217901668-A
Country	US
Kind code	B2
Filing date	Sep 1, 2022
Priority date	Mar 17, 2022
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A semiconductor device includes a semiconductor part, first and second electrodes and first-third and second-third electrodes. The semiconductor part is provided between the first and second electrodes. The semiconductor part includes a first semiconductor layer of a first conductivity type, second and third semiconductor layers of a second conductivity type. The second and third semiconductor layers are arranged between the first layer and the second electrode. The first-third and second-third electrodes are provided in the semiconductor part. The second semiconductor layer is provided between the first-third electrode and the second-third electrode. The second electrode includes a contact portion extending into the second semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer between the contact portion and the second-third electrode. The second semiconductor layer includes a first portion facing the third semiconductor layer via the contact portion.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a semiconductor part including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a third semiconductor layer of the second conductivity type; a first electrode electrically connected to the first semiconductor layer of the semiconductor part; a second electrode electrically connected to the second semiconductor layer and the third semiconductor layer of the semiconductor part; and a plurality of third electrodes provided in the semiconductor part and electrically insulated from the semiconductor part by a first insulating film, the semiconductor part being provided between the first electrode and the second electrode, the first semiconductor layer extending between the first electrode and the second electrode, the second semiconductor layer being provided between the first semiconductor layer and the second electrode, the third semiconductor layer being partially provided on the second semiconductor layer between the second semiconductor layer and the second electrode, the third semiconductor layer including a second conductivity type impurity with a concentration higher than a concentration of a second conductivity type impurity in the second semiconductor layer, the plurality of third electrodes each being provided inside a first trench extending into the first semiconductor layer from a front surface of the semiconductor part at the second electrode side, the plurality of third electrodes including a first-third electrode and a second-third electrode, the first-third and second-third electrodes being adjacent to each other, the second semiconductor layer being provided between the first-third electrode and the second-third electrode, the second semiconductor layer facing the first-third electrode and the second-third electrode respectively via the first insulating film, the semiconductor part further including a second trench between the first-third electrode and the second-third electrode, the second trench extending from the front surface of the semiconductor part into the second semiconductor layer, the second electrode including a contact portion extending into the second trench, the third semiconductor layer being provided between the contact portion of the second electrode and the second-third electrode, the third semiconductor layer facing the second-third electrode via the first insulating film, the second semiconductor layer including a first portion provided between the contact portion of the second electrode and the first-third electrode, the third semiconductor layer facing the first portion of the second semiconductor layer via the contact portion of the second electrode, and the second semiconductor layer extending to the front surface of the semiconductor part in the first portion.

2 . The device according to claim 1 , wherein
the semiconductor part further includes a second-third semiconductor layer, the second-third semiconductor layer is provided between the contact portion of the second electrode and the second-third electrode, the second-third semiconductor layer being apart from the third semiconductor layer, and the second semiconductor layer further includes a second portion provided between the second-third semiconductor layer and the third semiconductor layer.

3 . The device according to claim 2 , wherein
the semiconductor part further includes a third-third semiconductor layer, and the third-third semiconductor layer is provided between the contact portion of the second electrode and the first-third electrode, the third-third semiconductor layer facing the second portion of the second semiconductor layer via the contact portion of the second electrode.

4 . The device according to claim 2 , wherein
the plurality of third electrodes each extend in a first direction along the front surface of the semiconductor part, the second portion of the second semiconductor layer is in contact with the third semiconductor layer and the second-third semiconductor layer, and the second portion of the second semiconductor layer has a width in the first direction larger than a width of the third semiconductor layer in the first direction and a width of the second-third semiconductor layer in the first direction.

5 . The device according to claim 4 , wherein
the contact portion of the second electrode extends in the first direction, and the third semiconductor layer and the second-third semiconductor layer are in contact with the contact portion of the second electrode.

6 . The device according to claim 1 , wherein
the second electrode further includes a second contact portion apart from the contact portion, the contact portion and the second contact portion are arranged in the first direction between the first-third electrode and the second-third electrode, the semiconductor part further includes a second-third semiconductor layer, the second-third semiconductor layer being provided between the second contact portion of the second electrode and the second-third electrode, and the third semiconductor layer is in contact with the contact portion, and the second-third semiconductor layer is in contact with the second contact portion.

7 . The device according to claim 6 , wherein
the second electrode further includes a third contact portion apart from the contact portion and the second contact portion, the third contact portion is provided between the contact portion and the second contact portion, the contact portion and the second and third contact portions being provided between the first-third electrode and the second-third electrode, the contact portion and the second and third contact portions being arranged in the first direction, the semiconductor part further includes a third-third semiconductor layer, and the third-third semiconductor layer is provided between the third contact portion of the second electrode and the first-third electrode.

8 . The device according to claim 7 , wherein
the second electrode further includes a fourth contact portion provided between the first-third electrode and the second-third electrode, the contact portion and the second to fourth contact portions being arranged in the first direction and apart from each other, the second semiconductor layer includes a second portion provided between the fourth contact portion and the second-third electrode, and the fourth contact portion of the second electrode is provided between the first portion and the second portion of the second semiconductor layer, the fourth contact portion being in contact with the first and second portions of the second semiconductor layer.

9 . The device according to claim 1 , wherein
the semiconductor part includes a plurality of the third semiconductor layers apart from each other between the contact portion of the second electrode and the second-third electrode, the plurality of third semiconductor layers face the first portion of the second semiconductor layer via the contact portion of the second electrode, and the second semiconductor layer includes a second portion provided between two adjacent third semiconductor layers of the plurality of third semiconductor layers.

10 . The device according to claim 9 , wherein
the plurality of third electrodes further include a third-third electrode adjacent to the second-third electrode, the semiconductor part further includes a third portion of the second semiconductor layer provided between the second-third electrode and the third-third electrode, and the plurality of third semiconductor layers face the third portion of the second semiconductor layer

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Itokazu Hiroko
• Matsudai Tomoko
• Iwakaji Yoko
• Kawamura Keiko
• Fuse Kaori

Classifications

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title

• H10D12/481

  having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title

• H10D62/128

  Anode regions of diodes · CPC title

• H10D64/117

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title

• H10D62/127

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title