Semiconductor structure with flush shallow trench isolation and gate oxide and method of manufacturing the same
US-2024395883-A1 · Nov 28, 2024 · US
Semiconductor structure and method for forming same
US12550367B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12550367-B2 |
| Application number | US-202318219227-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 7, 2023 |
| Priority date | Oct 28, 2022 |
| Publication date | Feb 10, 2026 |
| Grant date | Feb 10, 2026 |
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Abstract
Official abstract text for this publication.
A semiconductor structure and a method for forming same. The structure includes: a base substrate; a gate structure, located on the base substrate; a drift region, located in the base substrate on one side of the gate structure; a body region, located in the base substrate on the other side of the gate structure; a drain region, located in the drift region on one side of the gate structure; a source region, located in the body region on the other side of the gate structure; and a floating field plate, located on the drift region between the gate structure and the drain region, where the floating field plate has notches arranged at intervals along a width direction of the gate structure, and the floating field plate also has notches arranged at intervals along a length direction of the gate structure.
First claim
Opening claim text (preview).
What is claimed is: 1 . A semiconductor structure, comprising: a base substrate; a gate structure, located on the base substrate; a drift region, located in the base substrate on a first side of the gate structure; a body region, located in the base substrate on a second side of the gate structure; a drain region, located in the drift region on the first side of the gate structure; a source region, located in the body region on the second side of the gate structure; an…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/65Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US12550367B2 cover?
- A semiconductor structure and a method for forming same. The structure includes: a base substrate; a gate structure, located on the base substrate; a drift region, located in the base substrate on one side of the gate structure; a body region, located in the base substrate on the other side of the gate structure; a drain region, located in the drift region on one side of the gate structure; a s…
- Who is the assignee on this patent?
- Semiconductor Mfg Int Beijing Corp, Semiconductor Mfg Int Shanghai Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D30/65. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 10 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).