Semiconductor device coupled to a temperture detection element for correction of the temperture signal

Patent metadata

Field	Value
Publication number	US-12546669-B2
Application number	US-202318357675-A
Country	US
Kind code	B2
Filing date	Jul 24, 2023
Priority date	Sep 1, 2022
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A semiconductor device includes an integrated circuit having a first resistor configuring a voltage divider circuit, a sensing resistor configured to measure a sheet resistance having a same attribute as that of the first resistor, a temperature detection circuit configured to detect a value of a first temperature, a storage circuit configured to store a table including first information for each of a plurality of values of the first temperatures, the first information corresponding to a sheet resistance of the first resistor obtained based on a result of measurement of the sensing resistor, and indicating a relationship between a second temperature and a divided voltage of the voltage divider circuit at the second temperature, and an arithmetic circuit configured to obtain the second temperature, based on the first information at the value of the first temperature detected by the temperature detection circuit and the divided voltage.

First claim

What is claimed is:

1 . A semiconductor device configured to be coupled to a temperature detection element, the semiconductor device comprising:
an integrated circuit, including:
a terminal through which the temperature detection element is coupled,
a first resistor coupled to the terminal, such that the first resistor is coupled in series with the temperature detection element through the terminal to thereby configure a voltage divider circuit for providing a divided voltage,
a sensing resistor configured to measure a sheet resistance, the sensing resistor having a same attribute as an attribute of the first resistor,
a temperature detection circuit configured to detect a value of a first temperature that is a temperature of the integrated circuit,
a storage circuit configured to store a table including first information for each of a plurality of values of the first temperature, the plurality of values including the value of the first temperature detected by the temperature detection circuit, the first information corresponding to the sheet resistance of the first resistor obtained from a result of measurement of the sensing resistor, and indicating a relationship between a second temperature, which is a temperature of the temperature detection element, and the divided voltage at the second temperature, and
an arithmetic circuit configured to obtain the second temperature, based on the first information for the value of the first temperature detected by the temperature detection circuit and the divided voltage of the voltage divider circuit.

2 . The semiconductor device according to claim 1 , wherein
the storage circuit stores a plurality of tables respectively for a plurality of sheet resistances, the plurality of tables including said table for said sheet resistance, and the arithmetic circuit selects one of the plurality of tables corresponding to the sheet resistance detected by the sensing resistor.

3 . The semiconductor device according to claim 1 , wherein
the temperature detection circuit includes a diode, and detects the value of the first temperature based on a temperature characteristic of a forward voltage of the diode.

4 . The semiconductor device according to claim 1 , wherein
the voltage divider circuit further includes a second resistor that is coupled in series with the first resistor and that is coupled in parallel with the temperature detection element through the terminal.

5 . The semiconductor device according to claim 4 , wherein
the first resistor and the second resistor are made of polysilicon.

6 . The semiconductor device according to claim 4 , wherein
the first resistor includes a plurality of first resistors, and the second resistor includes a plurality of second resistors, the semiconductor device further includes a switching circuit configured to selectively couple the plurality of first resistors and the plurality of second resistors to the terminal.

7 . The semiconductor device according to claim 1 , further comprising:
a pad coupled to the sensing resistor, a resistance of the sensing resistor being measurable through the pad.

8 . The semiconductor device according to claim 1 , wherein
the storage circuit further stores second information indicating a manufacturing condition of the integrated circuit.

9 . A semiconductor device configured to be coupled to a temperature detection element, the semiconductor device comprising:
a first integrated circuit and a second integrated circuit, wherein the first integrated circuit includes:
a terminal through which the temperature detection element is coupled,
a first resistor coupled to the terminal, such that the first resistor is coupled in series with the temperature detection element to thereby configure a voltage divider circuit for providing a divided voltage,
a sensing resistor configured to measure a sheet resistance, the sensing resistor having a same attribute as an attribute of the first resistor, and
a temperature detection circuit configured to detect a value of a first temperature that is a temperature of the first integrated circuit; and
the second integrated circuit includes:
a storage circuit configured to store a table including first information for each of a plurality of values of the first temperature, the plurality of values including the value of the first temperature detected by the temperature detection circuit, the first information corresponding to the sheet resistance of the first resistor obtained from a result of measurement of the sensing resistor, and indicating a relationship between a second temperature, which is a temperature of the temperature detection element, and the divided voltage at the second temperature, and
an arithmetic circuit configured to obtain the second temperature, based on the first information for the value of the first temperature detected by the temperature detection circuit and the divided voltage of the voltage divider circuit.

Assignees

• Fuji Electric Co Ltd

Inventors

• Ito Yuichi
• Matsunami Kazuhiro

Classifications

• H10P74/277

  Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

• G01K15/005

  Calibration · CPC title

• G01K1/20

  Compensating for effects of temperature changes other than those to be measured, e.g. changes in ambient temperature · CPC title

• G01K7/42

  Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature · CPC title

• G01K7/24 Primary

  in a specially-adapted circuit, e.g. bridge circuit · CPC title