Magnetic polishing slurry and method for polishing a workpiece

Patent metadata

Field	Value
Publication number	US-12545810-B2
Application number	US-202117141948-A
Country	US
Kind code	B2
Filing date	Jan 5, 2021
Priority date	May 6, 2020
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A magnetic polishing slurry for polishing a workpiece includes magnetic particles coated with a modifying material, a liquid carrier, and abrasives. The modifying material has a hardness lower than that of the workpiece.

First claim

What is claimed is:

1 . A magnetic polishing slurry for polishing a wafer, comprising:
magnetic particles coated with a modifying material, wherein a hardness of the modifying material is lower than a hardness of the wafer; a liquid carrier, which is an oily medium selected from mineral oil, vegetable oil, silicone oil, and combinations thereof; abrasives; a corrosion inhibitor selected from the group consisting of: 1,2,4-triazole and derivatives thereof, 1,2,3-triazole and derivatives thereof, pyrazole and derivatives thereof, imidazole, benzimidazole and derivatives thereof, isocyanurate and derivatives thereof, an aromatic amine, and combinations thereof; and a pH-adjusting agent selected from triethanolamine, dimethylbenzylamine and ethoxybenzylamine, wherein the modifying material comprises a polymer, and wherein the polymer comprises an elastomer.

2 . The magnetic polishing slurry according to claim 1 , wherein the abrasives are selected from the group consisting of: silicon oxide particles, cerium oxide particles, and combination thereof.

3 . The magnetic polishing slurry according to claim 1 , wherein the elastomer comprises a homopolymeric elastomer, a copolymeric elastomer or a combination thereof.

4 . The magnetic polishing slurry according to claim 1 , wherein the polymer comprises a thermoplastic polymer, a thermosetting polymer or a combination thereof.

5 . The magnetic polishing slurry according to claim 1 , wherein the polymer comprises polyurethane, polystyrene, polyepoxy resin, polyvinyl alcohol, fluoropolymer, polymethacrylate, polyacrylic acid, polyamide, Nylon 6, Nylon 66, polyamides (PA), polybutylene terephthalate (PBT), polycarbonates (PC), polyetheretherketone (PEEK), polyetherketone (PEK), polyethylene terephthalate (PET), polyimide, polyoxymethylene plastic (“POM” or “Acetal”), polyphenylene sulfide (PPS), polyphenylene oxide (PPO), polysulphone (PSU), polytetrafluoroethylene (“PTFE”), poly(methyl methacrylate) (PMMA), natural rubber, isoprene rubber butadiene rubber, chloroprene rubber, silicone rubber, fluorosilicone rubber, polyurethane copolymer, isobutylene-isoprene rubber, styrene-butadiene rubber, acrylonitrile-butadiene rubber, acrylonitrile butadiene styrene (ABS), or hydrogenated nitrile butadiene rubber.

6 . The magnetic polishing slurry according to claim 1 , wherein the magnetic particles have an average particle size ranging from about 1.0 μm to about 5000 μm.

7 . The magnetic polishing slurry according to claim 1 , wherein the magnetic particles have an average particle size ranging from about 5.0 μm to about 100 μm.

8 . The magnetic polishing slurry according to claim 1 , wherein the modifying material coated over the magnetic particles has an average thickness of 1 to 100 nm.

9 . The magnetic polishing slurry according to claim 1 , wherein the corrosion inhibitor is an aromatic amine.

10 . The magnetic polishing slurry according to claim 9 , wherein the aromatic amine comprises a C 6-22 aromatic amine.

11 . The magnetic polishing slurry according to claim 1 , wherein the pH-adjusting agent is triethanolamine.

12 . The magnetic polishing slurry according to claim 1 , wherein the pH-adjusting agent is dimethylbenzylamine.

13 . The magnetic polishing slurry according to claim 1 , wherein the pH-adjusting agent is ethoxybenzylamine.

14 . A magnetic polishing slurry for polishing a wafer, comprising:
magnetic particles having a hardness lower than a hardness of the wafer, wherein the magnetic particles include europium, europium oxide, a europium alloy, an europium sulfate, an europium halide, an europium complex or combinations thereof, and wherein the magnetic particles have a particle size ranging from about 5.0 μm to about 5000 μm; a liquid carrier, which is an oily medium selected from mineral oil, vegetable oil, silicone oil, and combinations thereof; and abrasives selected from silicon oxide particles, wherein the magnetic polishing slurry further comprises a corrosion inhibitor selected from 1,2,4-triazole and derivatives thereof, 1,2,3-triazole and derivatives thereof, pyrazole and derivatives thereof, imidazole, benzimidazole and derivatives thereof, isocyanurate and derivatives thereof, and an aromatic amine.

15 . The magnetic polishing slurry according to claim 14 , wherein the slurry is substantially free of water.

16 . A magnetic polishing slurry for polishing a wafer, comprising:
magnetic particles coated with a modifying material, wherein a hardness of the modifying material is lower than a hardness of the wafer; a liquid carrier, which is an oily medium selected from mineral oil, vegetable oil, silicone oil, and combinations thereof; abrasives; and a corrosion inhibitor selected from the group consisting of: 1,2,4-triazole and derivatives thereof, 1,2,3-triazole and derivatives thereof, pyrazole and derivatives thereof, imidazole, benzimidazole and derivatives thereof, isocyanurate and derivatives thereof, an aromatic amine, and combinations thereof, wherein the magnetic particles comprise an alloy of cobalt comprising cobalt with an f-block transition element, wherein the modifying material comprises a polymer, and wherein the polymer comprises an elastomer.

17 . The magnetic polishing slurry according to claim 16 , wherein the alloy of cobalt comprising cobalt with the f-block transition element is selected from cobalt samarium alloy and cobalt neodymium alloy.

18 . The magnetic polishing slurry according to claim 16 , wherein the abrasives are selected from the group consisting of: silicon oxide particles, cerium oxide particles, and combination thereof.

19 . The magnetic polishing slurry according to claim 16 , wherein the abrasives are silicon oxide particles.

20 . The magnetic polishing slurry according to claim 16 , wherein the corrosion inhibitor is selected from an aromatic amine.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Cui Ji
• Chen Chih Hung
• Chen Kei-Wei

Classifications

• C09K3/1454

  Abrasive powders, suspensions and pastes for polishing · CPC title

• B24B1/005

  using a magnetic polishing agent · CPC title

• H01F1/053

  containing rare earth metals · CPC title

• H01F1/0552

  with a protective layer · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title