Light-receiving element, X-ray imaging element, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-12543389-B2
Application number	US-202218575381-A
Country	US
Kind code	B2
Filing date	Mar 25, 2022
Priority date	Jul 6, 2021
Publication date	Feb 3, 2026
Grant date	Feb 3, 2026

Abstract

A first light-receiving element of an embodiment of the disclosure includes: a semiconductor substrate including a photoelectric conversion region; a first first electrically-conductive region provided at a first surface interface of the semiconductor substrate and coupled to a first electrode; a second first electrically-conductive region provided around the first first electrically-conductive region and coupled to a second electrode, at the first surface interface; a third first electrically-conductive region in an electrically floating state provided around the second first electrically-conductive region, at the first surface interface; a first second electrically-conductive region having a different electrically-conductive type between the first first electrically-conductive region and the second first electrically-conductive region, at the first surface interface; and a fourth first electrically-conductive region provided at least between the first first electrically conductive region and the first second electrically-conductive region and having an impurity concentration lower than the first first electrically-conductive region, near the first surface interface.

First claim

What is claimed is:

1 . A light-receiving element, comprising:
a semiconductor substrate including a photoelectric conversion region;
a first first electrically-conductive region provided at an interface of a first surface of the semiconductor substrate and coupled to a first electrode;
a second first electrically-conductive region provided around the first first electrically-conductive region and coupled to a second electrode, at the interface of the first surface;
a third first electrically-conductive region provided around the second first electrically-conductive region and being in an electrically floating state, at the interface of the first surface;
a first second electrically-conductive region having a different electrically-conductive type provided between the first first electrically-conductive region and the second first electrically-conductive region, at the interface of the first surface; and
a fourth first electrically-conductive region provided at least between the first first electrically-conductive region and the first second electrically-conductive region and having an impurity concentration lower than the first first electrically-conductive region, near the interface of the first surface.

2 . The light-receiving element according to claim 1 , wherein the fourth first electrically-conductive region has a peak concentration of 1e 19 cm −3 or less.

3 . The light-receiving element according to claim 1 , wherein the fourth first electrically-conductive region is further provided between the first second electrically-conductive region and the second first electrically-conductive region at the interface of the first surface.

4 . The light-receiving element according to claim 1 , further comprising:
an insulating layer provided on a side of the first surface of the semiconductor substrate; and a wiring layer provided in the insulating layer, wherein the insulating layer between the first surface and the wiring layer includes a monolayer film of silicon oxide or a stacked film in which at least a silicon oxide film having a thickness of 30 nm or more and a silicon nitride film are provided in this order from the side of the first surface.

5 . The light-receiving element according to claim 1 , further comprising:
a first insulating layer provided on the first surface of the semiconductor substrate and including a high-dielectric material having a relative permittivity higher than silicon oxide; and a first electrically-conductive film provided on a side of the first surface of the semiconductor substrate with at least the first insulating layer interposed therebetween.

6 . The light-receiving element according to claim 5 , wherein
the first electrically-conductive film comprises a plurality of first electrically-conductive films, the first insulating layer is provided individually for each of the plurality of first electrically-conductive films, and the light-receiving element further comprises a second insulating layer in which a plurality of the first insulating layers and the plurality of first electrically-conductive films are embedded and an air gap is formed at least between the first insulating layers adjacent to each other.

7 . The light-receiving element according to claim 1 , further comprising an insulating layer provided on a side of the first surface of the semiconductor substrate, wherein
the insulating layer has an air gap formed between the first first electrically-conductive region and the second first electrically-conductive region.

8 . The light-receiving element according to claim 7 , wherein
the semiconductor substrate has a depression on the first surface, and the first first electrically-conductive region is provided in the depression.

9 . The light-receiving element according to claim 1 , wherein
a plurality of the third first electrically-conductive regions are provided substantially concentrically and rectangularly or substantially concentrically about the first first electrically-conductive region, and the third first electrically-conductive regions adjacent to each other have a uniform interval therebetween in all formation regions.

10 . The light-receiving element according to claim 1 , further comprising:
an insulating layer provided on a side of the first surface of the semiconductor substrate; and a second electrically-conductive film provided wider than the third first electrically-conductive region to cover at least a portion of the third first electrically-conductive region with the insulating layer interposed therebetween, the second electrically-conductive film being electrically coupled to the third first electrically-conductive region via an opening provided in the insulating layer.

11 . The light-receiving element according to claim 10 , wherein the second electrically-conductive film overhangs the third first electrically-conductive region on a side of the first first electrically-conductive region.

12 . The light-receiving element according to claim 1 , wherein
a plurality of the third first electrically-conductive regions are provided substantially concentrically and rectangularly or substantially concentrically about the first first electrically-conductive region, and the light-receiving element further comprises a second second electrically-conductive region provided between the third first electrically-conductive regions adjacent to each other near the interface of the first surface.

13 . The light-receiving element according to claim 12 , wherein the third first electrically-conductive region includes, on both sides, a fifth first electrically-conductive region having an impurity concentration lower than the third first electrically-conductive region.

14 . The light-receiving element according to claim 12 , wherein the second second electrically-conductive region is further provided near the interface of the first surface between the second first electrically-conductive region and the third first electrically-conductive region.

15 . The light-receiving element according to claim 12 , wherein the second second electrically-conductive region is provided in contact with the third first electrically-conductive region on a side opposite to a side of the second first electrically-conductive region.

16 . The light-receiving element according to claim 12 , further comprising a sixth first electrically-conductive region provided near the interface of the first surface between the second second electrically-conductive region and the third first electrically-conductive region on a side of the second first electrically-conductive region, the sixth first electrically-conductive region having an impurity concentration lower than the third first electrically-conductive region.

17 . The light-receiving element according to claim 15 , wherein, of the second second electrically-conductive region provided in contact with each of the plurality of the third first electrically-conductive regions, the second second electrically-conductive region in contact with the third first electrically-conductive region is formed wider as being closer to the side opposite to the side of the second first electrically-conductive region.

18 . The light-receiving element according to claim 15 , wherein, of the second second electrically-conductive region provided in contact with each of the plurality of the third first electrically-conductive regions, the second second electrically-conductive region in contact with the third first electrically-conductive region has a higher imp

Assignees

• Sony Semiconductor Solutions Corp
• Riken

Inventors

• Kawamura Takahiro
• Tojinbara Hiroki
• Hatsui Takaki
• Yoshida Shinichi
• Nakazawa Keiichi
• Iwata Hikaru
• Ota Kazunobu
• Maruyama Takuya
• Ishiwata Hiroaki
• Arai Chihiro
• Ando Atsuhiro
• Shirakata Toru
• ANSAI Hisahiro
• Miyata Satoe
• Kamibaba Ryu
• Uesaka Yusuke
• Takeya Yukari

Classifications

• H10F39/811

  Interconnections · CPC title

• H10F39/1892 Primary

  Direct radiation image sensors · CPC title

• H10F30/221

  the potential barrier being a PN homojunction · CPC title

• H10F30/20

  the devices having potential barriers, e.g. phototransistors · CPC title

• H10F39/10

  Integrated devices · CPC title