Device for determining existence of damage in semiconductor device and method related thereto

Patent metadata

Field	Value
Publication number	US-12538802-B2
Application number	US-202217742784-A
Country	US
Kind code	B2
Filing date	May 12, 2022
Priority date	May 12, 2022
Publication date	Jan 27, 2026
Grant date	Jan 27, 2026

Abstract

A semiconductor device may include a semiconductor substrate, a wire placed along at least a portion of a perimeter of the semiconductor substrate, and processing circuitry connected to the wire, the processing circuitry to, based on a signal from the wire, determine whether or not the semiconductor device is damaged.

First claim

The invention claimed is:

1 . A semiconductor device comprising:
a semiconductor substrate; a single wire placed only on a top surface of the semiconductor substrate along at least a portion of a perimeter of the semiconductor substrate, the single wire running along the at least a portion of the perimeter in a single conductive path; and processing circuitry connected to the single wire, the processing circuitry to, based on a signal from the single wire, determine whether or not the semiconductor device is damaged.

2 . The semiconductor device of claim 1 , comprising a seal ring placed along the perimeter of the semiconductor substrate, wherein the single wire is placed near the seal ring such that the seal ring surrounds the single wire.

3 . The semiconductor device of claim 2 , wherein the single wire is positioned at a distance of 1-100 micrometers from the seal ring.

4 . The semiconductor device of claim 1 , wherein the processing circuitry is further configured to generate an input signal and to compare the input signal to the signal from the single wire to determine whether or not the semiconductor device is damaged.

5 . The semiconductor device of claim 4 , wherein the signal from the single wire comprises a voltage change detected from a first end of the single wire to a second end of the single wire.

6 . The semiconductor device of claim 1 , wherein the processing circuitry is further configured, based on the signal from the single wire, to determine a location at which the semiconductor device is damaged.

7 . A device comprising:
a support structure comprising an integrated circuit, a single wire placed only on a top surface of the support structure along at least a portion of a perimeter of the support structure, the single wire running around the support structure in a single conductive path; and a controller configured to receive a signal from the single wire and, based on the signal, to determine if the support structure is damaged.

8 . The device of claim 7 , comprising a seal ring placed along the perimeter of the support structure, wherein single wire is placed near the seal ring such that the seal ring surrounds the single wire.

9 . The device of claim 8 , wherein the single wire is positioned at a distance of 1-100 micrometers from the seal ring.

10 . The device of claim 7 , wherein the controller is further configured to determine damage to the support structure, based upon the signal from the single wire, during an assembly process of the device.

11 . The device of claim 7 , wherein the controller is further configured to generate an input signal and to compare the input signal to the signal from the single wire to determine whether or not the support structure is damaged.

12 . The device of claim 11 , wherein the signal received from the single wire comprises a voltage change detected from a first end of the single wire to a second end of the single wire.

13 . The device of claim 7 , wherein the controller is further configured, based on the signal from the single wire, to determine a location at which the support structure is damaged.

14 . A method of determining damage in a semiconductor substrate, the method comprising:
receiving a signal from a single wire placed only on a top surface of the semiconductor substrate along at least a portion of a perimeter of the semiconductor substrate, the single wire running along the at least a portion of the perimeter in a single conductive path; and based on the signal, determining whether or not the semiconductor substrate is damaged.

15 . The method of claim 14 , wherein receiving the signal comprises detecting a voltage change from a first end of the single wire to a second end of the single wire.

16 . The method of claim 15 , further comprising generating an input signal, and comparing the input signal to the signal from the single wire, such that determining whether or not the semiconductor substrate is damaged is based on the comparison of the input signal to the signal from the single wire.

17 . The method of claim 16 , wherein comparing comprises determining if there is a voltage change from a first end of the single wire to a second end of the single wire.

Assignees

• Mellanox Technologies Ltd

Inventors

• Green-Petersen Allan
• Andersen Kasper
• Ahrendt Henrik
• Roager Thomas

Classifications

• H01L23/585

  Electricity · mapped topic

• H01L23/564

  Electricity · mapped topic

• G01R31/2601

  Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence) · CPC title

• H01L23/562 Primary

  Electricity · mapped topic

• H10W42/00

  Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title