Multijunction solar cell

Patent metadata

Field	Value
Publication number	US-12538588-B2
Application number	US-202418756932-A
Country	US
Kind code	B2
Filing date	Jun 27, 2024
Priority date	Jan 28, 2021
Publication date	Jan 27, 2026
Grant date	Jan 27, 2026

Abstract

A multijunction solar cell including an upper first solar subcell having an emitter and base layers forming a photoelectric junction; a second solar subcell disposed under and adjacent to the upper first solar subcell, and having an emitter and base layers forming a photoelectric junction; and a third solar subcell disposed under and adjacent to the second solar subcell and having an emitter and base layers forming a photoelectric junction; wherein at least one of the base and emitter layers of at least a particular solar subcell from among the upper first solar subcell, the second solar subcell, and the third solar subcell has a graded band gap throughout at least a portion of thickness of its active layer adjacent to the photoelectric junction and being in a range of 20 to 300 MeV greater than a band gap in the active layer in both the emitter layer and the base layer spaced away from the photoelectric junction.

First claim

The invention claimed is:

1 . A multijunction solar cell comprising:
first solar subcell, having an emitter layer and a base layer which form a photoelectric junction; a second solar subcell disposed below and adjacent to the first solar subcell, having an emitter layer and a base layer which form a photoelectric junction; and a third solar subcell disposed below the second solar subcell, having an emitter layer and a base layer which form a photoelectric junction; wherein the base layer and the emitter layer forming an active layer of a particular solar subcell from among the first solar subcell, the second solar subcell, and the third solar subcell, has a graded band gap throughout at least a portion of the thickness of a first region in the emitter layer of the particular solar subcell adjacent to the photoelectric junction, and throughout at least a portion of the thickness of a second region in the base layer spaced apart from the first region and adjacent to the photoelectric junction of the particular solar subcell, with the band gap in the first region and the band gap in the second region being in the range of 20 to 300 meV greater than the band gap in a third region in the emitter layer spaced away from the photoelectric junction and greater than the band gap in a fourth region in the base layer spaced away from the photoelectric junction in the particular solar subcell.

2 . A solar cell as defined in claim 1 , wherein the thickness of the first region is less than the thickness of the second region.

3 . A solar cell as defined in claim 1 , wherein the band gap in the emitter layer in the first region in the particular solar subcell, increases to a first level, and then increases to a second level in the base layer in the particular solar subcell, that is higher in band gap than the first level in the emitter layer.

4 . A solar cell as defined in claim 1 , further comprising a third region in the emitter layer in the particular solar subcell, that lies directly adjacent to and spaced apart from the first region, wherein the band gap in the third region is constant.

5 . A solar cell as defined in claim 2 , further comprising a fourth region in the base layer in the particular solar subcell, that lies directly adjacent to and spaced apart from the second region, wherein the band gap in the fourth region is constant.

6 . A solar cell as defined in claim 3 , wherein the first level of the band gap is substantially located at the photoelectric junction of the particular solar subcell.

7 . A solar cell as defined in claim 3 , wherein the second level of the band gap is substantially located in the depletion region in the base layer of the particular solar subcell, the second solar subcell.

8 . A solar cell as defined in claim 5 , wherein the band gap in the third region of the particular solar subcell, equals the band gap in the fourth region of the particular solar subcell.

9 . A solar cell as defined in claim 1 , wherein the depletion region of the particular solar subcell asymmetric around the photoelectric junction of a particular solar subcell.

10 . A solar cell as defined in claim 1 , wherein the width of the graded band gap region in the particular solar subcell, is equal to the width of a depletion region in the particular solar subcell.

11 . A solar cell as defined in claim 1 , wherein the band gap of the particular solar subcell has a peak that is centered approximately where a Fermi level of the particular solar subcell crosses mid-band.

12 . A solar cell as defined in claim 1 , wherein the first and second regions of the graded band gap of the particular solar subcell, is asymmetric around the depletion region of the particular solar subcell.

13 . A solar cell as defined in claim 1 , wherein the first and second region of the particular solar subcell, is asymmetric around the photovoltaic junction.

14 . A solar cell as defined in claim 1 , wherein the first solar subcell is composed of indium gallium aluminum phosphide and has a first band gap in the range of 2.0 to 2.2 eV, wherein the emitter layer of the second solar subcell is composed of indium gallium phosphide or aluminum indium gallium arsenide, and the base layer is composed of aluminum indium gallium arsenide, the second solar subcell has a second band gap in the range of approximately 1.55 to 1.8 eV and being lattice matched with the first solar subcell, and wherein the third solar subcell is disposed adjacent to said second solar subcell and is composed of indium gallium arsenide and has a third band gap less than the second band gap of the second solar subcell and is lattice matched with the second solar subcell.

15 . A solar cell as defined in claim 1 , wherein the first solar subcell, the second solar subcell, and the third solar subcell each have a graded band gap throughout at least a portion of the thickness of their emitter layer and base layer.

16 . A solar cell as defined in claim 1 , further comprising an intermediate graded layer disposed between one of the first solar subcell, the second solar subcell, and the third solar subcell and the adjacent solar subcell disposed directly below the one solar subcell, wherein the intermediate layer is compositionally graded to lattice match the one solar subcell on one side and the adjacent solar subcell on the other side and is composed of any of the As, P, N, Sb based III-V compound semiconductors subject to the constraints of having the in-plane lattice parameter greater than or equal to that of the one solar subcell and less than or equal to that of the adjacent solar subcell, and having a band gap greater than that of the one solar subcell.

17 . A solar cell as defined in claim 1 , further comprising a bottom solar subcell disposed below the third solar subcell, and an intermediate graded layer disposed between the third solar subcell and the bottom solar subcell, wherein the intermediate layer is compositionally step-graded with between one and four steps to lattice match the third solar subcell on one side a 0<x<1, 0<y<1, and x and y selected such that the band gap remains at a constant value in the range of 1.15 to 1.41 eV, or 1.2 to 1.35 eV, or 1.25 to 1.30 eV throughout its thickness.

18 . A solar cell as defined in claim 14 , further comprising:
a distributed Bragg reflector (DBR) layer disposed adjacent to and beneath the third solar subcell and arranged so that light can enter and pass through the third solar subcell and at least a portion of which can be reflected back into the third solar subcell by the DBR layer, wherein the distributed Bragg reflector layer is composed of a plurality of alternating layers of lattice matched materials with discontinuities in their respective indices of refraction, wherein the difference in refractive indices between alternating layers is maximized in order to minimize the number of periods required to achieve a given reflectivity, and the thickness and refractive index of each period determines the stop band and its limiting wavelength, and wherein the DBR layer includes a first DBR layer composed of a plurality of p-type Al x Ga 1-x As layers, and a second DBR layer disposed over the first DBR layer and composed of a plurality of p-type Al y Ga 1-y As layers, where 0<x<1, 0<y<1, and y is greater than x; and an intermediate layer disposed between the DBR layer and the growth substrate, wherein the intermediate layer is compositionally step-graded to lattice match the DBR layer on one side and the growth substrate on the other side, and is composed of any of the As

Assignees

• Solaero Tech Corp

Inventors

• Hart John
• Derkacs Daniel
• Bittner Zachary
• Espenlaub Andrew

Classifications

• H10F10/161

  comprising multiple PN heterojunctions, e.g. tandem cells · CPC title

• H10F10/144

  comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells · CPC title

• H10F10/142

  comprising multiple PN homojunctions, e.g. tandem cells · CPC title

• H10F10/13 Primary

  Photovoltaic cells having absorbing layers comprising graded bandgaps · CPC title

• H10F10/163 Primary

  comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells · CPC title