Imaging device and electronic apparatus with multiple charge storage regions

Patent metadata

Field	Value
Publication number	US-12538044-B2
Application number	US-202218568373-A
Country	US
Kind code	B2
Filing date	Jun 10, 2022
Priority date	Jun 15, 2021
Publication date	Jan 27, 2026
Grant date	Jan 27, 2026

Abstract

The present technology relates to an imaging device and an electronic apparatus each capable of expanding a dynamic range without lowering a saturation charge quantity of a photodiode. There are provided a photoelectric conversion unit that converts light into charge, multiple storage portions that temporarily store charge, multiple transfer units that transfer charge to the storage portions, and a penetration trench that separates pixels. At least one of the multiple storage portions is a capacitive element. At least one of the multiple storage portions stores charge overflowing from the photoelectric conversion unit. For example, the present technology is applicable to an imaging device for capturing images.

First claim

What is claimed is:

1 . An imaging device, comprising:
a photoelectric conversion unit that converts light into charge; multiple storage portions that temporarily store charge,
wherein a first one of the charge storage portions includes a first floating diffusion region,
wherein a second one of the charge storage portions includes a second floating diffusion, and
wherein a third one of the charge storage portions includes a capacitive element;
multiple transfer units that transfer charge to the storage portions,
wherein a first one of the transfer units selectively transfers charge between the photoelectric conversion unit and the first floating diffusion region,
wherein a second one of the transfer units selectively transfers charge between the first floating diffusion region and the second floating diffusion region,
wherein a third one of the transfer units selectively transfers charge between the second floating diffusion region and the capacitive element; and
a penetration trench that separates adjacent pixels, wherein at least one of the multiple storage portions stores charge overflowing from the photoelectric conversion unit.

2 . The imaging device according to claim 1 , wherein
the capacitive element is an MIM (Metal-Insulator-Metal) capacitive element.

3 . The imaging device according to claim 1 , further comprising:
a solid-phase diffusion layer provided up to an intermediate position of the penetration trench.

4 . The imaging device according to claim 1 , further comprising:
a fixed charge film provided up to an intermediate position of the penetration trench.

5 . The imaging device according to claim 1 , further comprising:
a light shielding wall provided up to an intermediate position of the penetration trench.

6 . The imaging device according to claim 1 , wherein
each of the transfer units that transfer charge from the photoelectric conversion unit to the storage portions is a vertical transistor.

7 . The imaging device according to claim 1 , wherein
a contact of each of the storage portions is an advanced contact.

8 . The imaging device according to claim 1 , wherein
the multiple storage portions are connected in series, and store charge transferred from the photoelectric conversion unit and charge overflowing from the photoelectric conversion unit.

9 . The imaging device according to claim 1 , wherein
at least one of the multiple storage portions stores charge overflowing from the photoelectric conversion unit, and a different one of the storage portions stores charge transferred from the photoelectric conversion unit.

10 . The imaging device according to claim 1 , wherein
the three storage portions are provided, and read charge from the photoelectric conversion unit to achieve each of high conversion efficiency, middle conversion efficiency, and low conversion efficiency.

11 . The imaging device according to claim 2 , further comprising:
a first via connected to a first electrode of the MIM capacitive element; and a second via connected to a second electrode different from the first electrode, wherein a depth of the first via from a predetermined plane is different from a depth of the second via from the predetermined plane, and wherein a thickness of a first film laminated on the first electrode is different from a thickness of a second film laminated on the second electrode.

12 . The imaging device according to claim 11 , wherein
the first film has a configuration formed by laminating a third film including a material identical to a material of the second film, and a fourth film including a material different from the material of the second film.

13 . An imaging device, comprising:
a photoelectric conversion unit that converts light into charge; multiple storage portions that temporarily store charge; multiple transfer units that transfer charge to the storage portions; and a penetration trench that separates pixels, wherein at least one of the multiple storage portions is a capacitive element, wherein the capacitive element is an MIM (Metal-Insulator-Metal) capacitive element, and wherein at least one of the multiple storage portions stores charge overflowing from the photoelectric conversion unit; a first via connected to a first electrode of the MIM capacitive element; and a second via connected to a second electrode different from the first electrode, wherein a depth of the first via from a predetermined plane is different from a depth of the second via from the predetermined plane, and wherein a thickness of a first film laminated on the first electrode is different from a thickness of a second film laminated on the second electrode.

14 . The imaging device according to claim 13 , wherein
the first film has a configuration formed by laminating a third film including a material identical to a material of the second film, and a fourth film including a material different from the material of the second film.

15 . The imaging device according to claim 14 , wherein
the fourth film is an etching stopper film.

16 . The imaging device according to claim 14 , wherein
the fourth film is a metallic film including a metallic material.

17 . The imaging device according to claim 16 , wherein
the metallic film is a film including a metallic oxide or a metallic nitride each containing a material having lower bond energy with fluorine-based gas than a material of the first electrode.

18 . The imaging device according to claim 16 , wherein
the metallic film is a film that contains a material having a vapor pressure higher than a vapor pressure of fluoride produced by bonding of a material contained in the first electrode and fluorine-based gas.

19 . The imaging device according to claim 16 , further comprising:
an etching stopper film on the fourth film.

20 . An electronic apparatus, comprising:
an imaging device, including:
a photoelectric conversion unit that converts light into charge;
multiple storage portions that temporarily store charge,
wherein a first one of the charge storage portions includes a first floating diffusion region,
wherein a second one of the charge storage portions includes a second floating diffusion, and
wherein a third one of the charge storage portions includes a capacitive element;

multiple transfer units that transfer charge to the storage portions,
wherein a first one of the transfer units selectively transfers charge between the photoelectric conversion unit and the first floating diffusion region,
wherein a second one of the transfer units selectively transfers charge between the first floating diffusion region and the second floating diffusion region,
wherein a third one of the transfer units selectively transfers charge between the second floating diffusion region and the capacitive element; and

a penetration trench that separates adjacent pixels,
wherein at least one of the multiple storage portions storing charge overflowing from the photoelectric conversion unit; and
a processing unit that processes a signal received from the imaging device.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Uchida Tetsuya
• Miyazawa Shinji
• Ishizaki Takeshi
• SHINTAKU Hirosato
• Horikoshi Hiroshi

Classifications

• H10F39/811

  Interconnections · CPC title

• H10F39/8057

  Optical shielding · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H04N25/771

  comprising storage means other than floating diffusion · CPC title

• H04N25/59 Primary

  by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance · CPC title