Decomposition of silicon-containing precursors on porous scaffold materials
US-2020020935-A1 · Jan 16, 2020 · US
US12537193B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12537193-B2 |
| Application number | US-202218703285-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 21, 2022 |
| Priority date | Oct 21, 2021 |
| Publication date | Jan 27, 2026 |
| Grant date | Jan 27, 2026 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The invention relates to a particulate material and processes for the preparation thereof. The particulate material consists of a plurality of composite particles. The composite particles comprise a porous particle framework comprising micropores and/or mesopores. The total pore volume of micropores and mesopores as measured by gas adsorption is in the range from 0.4 to 2.2 cm 3 /g. The composite particles comprise a plurality of electroactive material domains and a plurality of modifier material domains disposed within the internal pore volume of the porous particle framework. At least a portion of the modifier material domains are located between adjacent electroactive material domains.
Opening claim text (preview).
The invention claimed is: 1 . A process for preparing composite particles, the process comprising the steps of: (a) providing a plurality of porous particles comprising micropores and/or mesopores, wherein the total pore volume of micropores and mesopores as measured by gas adsorption is in the range from 0.4 to 2.2 cm 3 /g, wherein the porous particles have a PD 90 pore diameter in the range from 2.5 to 20 nm; (b) contacting the porous particles with a precursor of an electroactive material at a temperature effective to cause deposition of a plurality of electroactive material domains in the pores of the porous particles; (c) forming a plurality of modifier material domains in the pores of the porous particles and adjacent to the electroactive material domains deposited in step (b). (d) contacting the porous particles from step (c) with a precursor of an electroactive material at a temperature effective to cause deposition of further electroactive material domains in the pores of the porous particles from step (c) and adjacent to the modifier material domains formed in the porous particles from step (c). 2 . A process according to claim 1 , wherein the porous particles have a total pore volume of micropores and mesopores in the range from 0.45 to 2.2 cm 3 /g. 3 . A process according to claim 1 , wherein the PD 50 pore diameter of the porous particles is no more than 15 nm. 4 . A process according to claim 1 , wherein the porous particles have a BET surface area in the range from 100 m 2 /g to 4,000 m 2 /g. 5 . A process according to claim 1 , wherein the porous particles are conductive porous particles, or wherein the conductive porous particles are conductive porous carbon particles, or wherein the conductive porous carbon particles comprise at least 80 wt % carbon. 6 . A process according to claim 1 , wherein the porous particles have a volumetric ratio of micropores to mesopores of from 90:10 to 30:70. 7 . A process according to claim 1 , wherein the PD 10 pore diameter of the porous particles is no more than 10 nm, and/or wherein the PD 90 pore diameter of the porous particles is no more than 15 nm. 8 . A process according to claim 1 , wherein the porous particles have a D 50 particle diameter in the range from 0.5 to 30 μm. 9 . A process according to claim 1 , wherein the electroactive material deposited in steps (b) and (d) is independently selected from silicon, tin, germanium, aluminium and mixtures and alloys thereof. 10 . A process according to claim 1 , wherein the electroactive material deposited in each of steps (b) and (d) is silicon. 11 . A process according to claim 1 , wherein the precursor of an electroactive material in each of steps (b) and (d) is independently selected from silane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), tetrasilane (Si 4 H 10 ), methylsilane, dimethylsilane and chlorosilanes. 12 . A process according to claim 1 , wherein steps (b) and (d) are independently carried out at a temperature in the range from 300 to 800° C. 13 . A process according to claim 1 , wherein step (b) and/or step (d) further comprises separating by-products from the particles. 14 . A process according to claim 1 , wherein step (c) comprises contacting the porous particles from step (b) with a passivating agent, optionally wherein the passivating agent is selected from (i) an oxygen containing gas; (ii) ammonia; (iii) a gas comprising ammonia and oxygen; (iv) phosphine, (v) R 1 —CH═CH—R 1 ; (vi) R 1 —C≡C—R 1 ; (vii) O═CR 1 R 1 ; (viii) HX—R 2 , and (ix) HX—C(O)—R 1 , wherein X represents O, S, NR 1 or PR 1 ; and wherein each R 1 independently represents H or an unsubstituted or substituted aliphatic or aromatic hydrocarbyl group having from 1 to 20 carbon atoms, or wherein two R 1 groups form an unsubstituted or substituted ring structure comprising from 3 to 8 carbon atoms in the ring; wherein R 2 represents an unsubstituted or substituted aliphatic or aromatic hydrocarbyl group having from 1 to 20 carbon atoms, or wherein R 1 and R 2 together form an unsubstituted or substituted ring structure comprising from 3 to 8 carbon atoms in the ring. 15 . A process according to claim 14 , wherein the passivating agent is selected from the group consisting of ethylene, propylene, 1-butene, butadiene, 1-pentene, 1,4-pentadiene, 1-hexene, 1-octene, styrene, divinylbenzene, acetylene, phenylacetylene, norbornene, norbornadiene and bicyclo [2.2.2] oct-2-ene. 16 . A process according to claim 1 , wherein step (c) comprises contacting the porous particles from step (b) with a carbon-containing precursor at a temperature effective to cause deposition of a pyrolytic carbon material in the pores of the porous particles. 17 . A process according to claim 1 , wherein after step (d), additional steps of; forming a plurality of modifier material domains in the pores of the porous particles and adjacent to the electroactive material domains; and contacting the porous particles with a precursor of an electroactive material at a temperature effective to cause deposition of further electroactive material domains in the pores of the porous particles and adjacent to the modifier material domains are repeated one or more times. 18 . A process according to claim 1 , further comprising the step of: (e) forming a plurality of modifier material domains in the pores and/or on the outer surface of the porous particles from step (d), optionally wherein step (e) comprises contacting the surface of the porous particles from the final step (d) with a passivating agent, optionally wherein the passivating agent is as defined in claim 14 , and/or wherein step (e) comprises combining the porous particles from step (d) with a pyrolytic carbon precursor; and heating the pyrolytic carbon precursor to a temperature effective to cause the deposition of a pyrolytic conductive carbon material into the pores and/or onto the outer surface of the porous particles. 19 . A process according to claim 1 , wherein the porous particles have a particle size distribution span (D 90 -D 10 )/D 50 ) of 5 or less. 20 . A process according to claim 10 , wherein the electroactive material is silicon; and no more than 10 wt % of the silicon deposited is coarse bulk silicon as determined by thermogravimetric analysis; and/or at least 20 wt %, of the silicon deposited is surface silicon as determined by thermogravimetric analysis.
Related publications grouped by family.
Answers are generated from the same data shown on this page.