Focused ion beam low kv enhancement
US-2015083929-A1 · Mar 26, 2015 · US
US12537164B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12537164-B2 |
| Application number | US-202118013761-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 31, 2021 |
| Priority date | Jun 29, 2020 |
| Publication date | Jan 27, 2026 |
| Grant date | Jan 27, 2026 |
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A process apparatus includes a differential pumping device having a head which has a plurality of annular grooves in a surface which faces a substrate to be processed. An orifice is formed inside an innermost one of the annular grooves and defines a processing space for processing the substrate. A vacuum pump is connected to at least one of the annular grooves to suck gas therefrom, with the surface of the head facing the substrate processing surface to create a high-level vacuum in the processing space. A focused ion beam column is equipped with a cylindrical chamber leading to the orifice. The chamber has disposed therein a focused ion beam optical system which emits a focused ion beam through the orifice. A precursor gas supply connects to the innermost annular groove to eject a precursor gas to flow into the processing space along the process surface.
Opening claim text (preview).
What is claimed is: 1 . A process apparatus comprising: a differential pumping device including a head which faces a given area of a process surface of a substrate to be processed and has a plurality of annular grooves formed in a process surface-facing surface of the head which faces the process surface of the substrate, the annular grooves surrounding a center of the head, the head having an orifice which is formed inside an innermost one of the annular grooves and defines a processing space serving to achieve processing of the process surface, at least one of the annular grooves being connected to a vacuum pump to suck gas from the one of the annular grooves with the process surface-facing surface opposed to the process surface to create a high-level vacuum in the processing space; and a focused ion beam column which is arranged on an opposite side of the head to the process surface-facing surface and includes a chamber leading to the orifice to be communicable with the processing space, the focused ion beam column also including a focused ion beam optical system which is disposed in the chamber and works to emit a focused ion beam through the orifice, wherein a precursor gas supply is connected to the innermost one of the annular grooves to eject a precursor gas toward the process surface so that the precursor gas flows into the processing space along the process surface. 2 . The process apparatus according to claim 1 , wherein the head includes a head body and a groove-forming plate attached to a surface of the head body which faces the substrate to be processed, and the surface of the groove-forming plate which faces the substrate to be processed is the process surface-facing surface. 3 . The process apparatus according to claim 2 , wherein the groove-forming plate is arranged in a form of islands within an outline of the surface of the head body which faces the substrate to be processed, and a shoulder of the head which is defined by the surface of the head body which faces the substrate and an outer periphery of the groove-forming plate is in a tapered shape. 4 . The process apparatus according to claim 2 , wherein the groove-forming plate is arranged in a form of islands within an outline of the surface of the head body which faces the substrate to be processed, and a shoulder of the head which is defined by the surface of the head body which faces the substrate and an outer periphery of the groove-forming plate is shaped to have a rounded surface. 5 . The process apparatus according to claim 2 , wherein the groove-forming plate includes a plurality of annular plates arranged around a center of the head. 6 . The process apparatus according to claim 1 , wherein a microchannel plate is disposed which has a beam output orifice which is formed in a nose of the chamber and through which the focused ion beam passes, and wherein the microchannel plate has a portion which lies around the beam output orifice and serves as a detector to capture secondary charged particles sputtered from the substrate. 7 . The process apparatus according to claim 1 , further comprising an optical microscope which detects an alignment mark formed on the substrate. 8 . The process apparatus according to claim 1 , further comprising an observation microscope which is arranged at a given offset-distance away from the head and works to observe a given region of the substrate to be processed. 9 . The process apparatus according to claim 1 , wherein the focused ion beam column includes a plurality of focused ion beam columns each of which has the differential pumping device mounted on a tip end thereof, each of the focused ion beam columns being arranged to face a respective one of a plurality of regions defined on the process surface of the substrate. 10 . The process apparatus according to claim 1 , wherein the focused ion beam column equipped with the differential pumping device is arranged to be movable in X-and Y-directions relative to the substrate which is fixed.
Detectors; Associated components or circuits therefor · CPC title
Vacuum locks {; Means for obtaining or maintaining the desired pressure within the vessel} · CPC title
Vessels; Containers · CPC title
for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation (H01J37/36 takes precedence) · CPC title
Large objects · CPC title
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