Capacitor and electronic device including the same

Patent metadata

Field	Value
Publication number	US-12532487-B2
Application number	US-202318350397-A
Country	US
Kind code	B2
Filing date	Jul 11, 2023
Priority date	Jan 26, 2023
Publication date	Jan 20, 2026
Grant date	Jan 20, 2026

Abstract

A capacitor is provided. The capacitor includes a first electrode, a second electrode disposed to face the first electrode, a dielectric layer of a rutile phase, disposed between the first electrode and the second electrode, and an interface layer between the first electrode and the dielectric layer, wherein the interface layer includes a first interface layer and a second interface layer, the first interface layer is adjacent to the first electrode, the second interface layer is adjacent to the dielectric layer, the first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer is smaller than a thickness of the first interface layer.

First claim

What is claimed is:

1 . A capacitor comprising:
a first electrode; a second electrode facing the first electrode; a dielectric layer between the first electrode and the second electrode, the dielectric layer comprising a dielectric of a rutile phase; and an interface layer between the first electrode and the dielectric layer, the interface layer including a first interface layer adjacent to the first electrode and a second interface layer between the dielectric layer and the first interface layer, wherein the first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer is smaller than a thickness of the first interface layer.

2 . The capacitor of claim 1 , wherein the first interface layer comprises VO x , wherein x is within a range of 2 to 3.

3 . The capacitor of claim 1 , wherein the first interface layer is doped with at least one of tungsten (W), tantalum (Ta), or niobium (Nb).

4 . The capacitor of claim 1 , wherein the thickness of the first interface layer is within a range of about 10 angstrom (Å) to about 100 Å.

5 . The capacitor of claim 1 , wherein the second interface layer includes at least one of germanium oxide (GeO 2 ) or tin oxide (SnO 2 ).

6 . The capacitor of claim 1 , wherein the thickness of the second interface layer is within a range of about 0.1 angstrom (Å) to about 10 Å.

7 . The capacitor of claim 1 , wherein an oxygen chemical potential of the second interface layer is greater than an oxygen chemical potential of the first interface layer.

8 . The capacitor of claim 1 , wherein the first electrode includes at least one of titanium nitride (TiN), vanadium nitride (VN), or molybdenum nitride (MoN).

9 . The capacitor of claim 1 , wherein the dielectric of the dielectric layer comprises rutile-phase TiO 2 .

10 . The capacitor of claim 9 , wherein the dielectric layer comprises at least one of gallium (Ga), aluminum (Al), lanthanum (La), boron (B), indium (In), scandium (Sc), or yttrium (Y) in an amount greater than or equal to 0 atom % and less than or equal to about 10 atom %.

11 . The capacitor of claim 1 , wherein a dielectric constant of the dielectric layer is 50 or more.

12 . The capacitor of claim 1 , wherein a thickness of the dielectric layer is in a range of about 1 nm to about 20 nm.

13 . The capacitor of claim 1 , wherein each of the first electrode and the second electrode has a thickness in a range of about 10 nm to about 100 nm.

14 . The capacitor of claim 1 , wherein a leakage current of the capacitor is in a range of 1×10 −2 A/cm 2 to 1×10 −8 A/cm 2 .

15 . An electronic device comprising:
a transistor; and a capacitor electrically connected to the transistor, the capacitor comprising
a first electrode,
a second electrode facing the first electrode,
a dielectric layer between the first electrode and the second electrode, the dielectric layer including a dielectric of a rutile phase, and
an interface layer between the first electrode and the dielectric layer, the interface layer including a first interface layer adjacent to the first electrode and a second interface layer between the first interface layer and the dielectric layer,
wherein the first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer is smaller than a thickness of the first interface layer.

16 . The electronic device of claim 15 , wherein the first interface layer comprises VO x , wherein x is within in a range of 2 to 3.

17 . The electronic device of claim 15 , wherein the first interface layer is doped with at least one of tungsten (W), tantalum (Ta), or niobium (Nb).

18 . The electronic device of claim 15 , wherein the second interface layer comprises at least one of germanium oxide (GeO 2 ), tin oxide (SnO 2 ), or manganese oxide (MnO 2 ).

19 . The electronic device of claim 15 , wherein a thickness of the second interface layer is within a range of about 0.1 Å to about 10 Å.

20 . The electronic device of claim 15 , wherein the dielectric of the dielectric layer comprises rutile-phase TiO 2 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Changsoo
• Kim Jinhong
• Kim Cheheung
• Lee Jooho
• Cho Yong-Hee

Classifications

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10D1/714

  having horizontal extensions · CPC title

• H10D1/60

  Capacitors · CPC title

• H10D1/684

  the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers · CPC title

• H10D1/688

  comprising barrier layers to prevent diffusion of hydrogen or oxygen · CPC title