Ranging image sensor and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-12529795-B2
Application number	US-202017788005-A
Country	US
Kind code	B2
Filing date	Dec 7, 2020
Priority date	Dec 26, 2019
Publication date	Jan 20, 2026
Grant date	Jan 20, 2026

Abstract

A ranging image sensor includes a semiconductor layer and an electrode layer. The semiconductor layer and the electrode layer form a plurality of pixels. Each of the plurality of pixels includes an avalanche multiplication region, a charge distribution region, a first charge transfer region, and a second charge transfer region in the semiconductor layer. Each of the plurality of pixels includes a photogate electrode, a first transfer gate electrode, and a second transfer gate electrode in the electrode layer. The avalanche multiplication region is continuous over the plurality of pixels or reaches a trench formed in the semiconductor layer so as to separate the plurality of pixels from each other.

First claim

The invention claimed is:

1 . A ranging image sensor, comprising:
a semiconductor layer having a first surface on a first side and a second surface on a second side opposite to the first side and forming a plurality of pixels arranged along the first surface; and an electrode layer provided on the first surface and forms the plurality of pixels, wherein each of the plurality of pixels includes: an avalanche multiplication region including a first conductive type first multiplication region formed in the semiconductor layer and a second conductive type second multiplication region formed on the first side of the first multiplication region in the semiconductor layer; a second conductive type charge distribution region formed on the first side of the second multiplication region in the semiconductor layer and connected to the second multiplication region; a second conductive type first charge transfer region formed on the first side of the second multiplication region in the semiconductor layer and connected to the charge distribution region; a second conductive type second charge transfer region formed on the first side of the second multiplication region in the semiconductor layer and connected to the charge distribution region; a photogate electrode formed on the first side of the charge distribution region in the electrode layer; a first transfer gate electrode formed on the first side of the charge distribution region in the electrode layer so as to be located on the first charge transfer region side with respect to the photogate electrode; and a second transfer gate electrode formed on the first side of the charge distribution region in the electrode layer so as to be located on the second charge transfer region side with respect to the photogate electrode, and the avalanche multiplication region is continuous over the plurality of pixels or reaches a trench formed in the semiconductor layer so as to separate the plurality of pixels from each other.

2 . The ranging image sensor according to claim 1 ,
wherein the trench is formed on the first surface, and a bottom surface of the trench is located on the second side with respect to the avalanche multiplication region.

3 . The ranging image sensor according to claim 1 ,
wherein the trench is formed on the first surface, and a bottom surface of the trench is located in the avalanche multiplication region.

4 . The ranging image sensor according to claim 1 ,
wherein each of the plurality of pixels further includes: a first conductive type well region formed on the first side of the second multiplication region in the semiconductor layer and forming a read circuit electrically connected to at least one of the first charge transfer region and the second charge transfer region; and a second conductive type barrier region formed between the second multiplication region and the well region in the semiconductor layer.

5 . The ranging image sensor according to claim 4 ,
wherein the barrier region includes the well region when viewed from a thickness direction of the semiconductor layer.

6 . The ranging image sensor according to claim 4 ,
wherein each of the plurality of pixels further includes a second conductive type sink region formed on the first side of the barrier region in the semiconductor layer and connected to the barrier region.

7 . The ranging image sensor according to claim 6 ,
wherein the sink region is connected to the second charge transfer region.

8 . The ranging image sensor according to claim 1 , further comprising:
a wiring layer provided on the first surface so as to cover the electrode layer and electrically connected to each of the plurality of pixels.

9 . A method for manufacturing the ranging image sensor according to claim 1 , comprising:
a first step of forming the semiconductor layer by forming the avalanche multiplication region, the charge distribution region, the first charge transfer region, and the second charge transfer region on a semiconductor substrate; and a second step of forming the electrode layer by forming the photogate electrode, the first transfer gate electrode, and the second transfer gate electrode on the first surface of the semiconductor layer after the first step, wherein, in the first step, the avalanche multiplication region is formed on the semiconductor substrate so as to be continuous over the plurality of pixels.

10 . The method for manufacturing the ranging image sensor according to claim 9 ,
wherein, in the first step, the trench is formed on the first surface after at least the avalanche multiplication region is formed on the semiconductor substrate.

11 . The method for manufacturing the ranging image sensor according to claim 10 , further comprising:
a third step of forming a wiring layer on the first surface so as to cover the electrode layer and electrically connecting the wiring layer to each of the plurality of pixels after the second step.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Mase Mitsuhito
• HIRAMITSU Jun
• Shimada Akihiro
• Ishii Hiroaki
• Ito Toshinori
• Tanaka Yuma

Classifications

• H10F39/8033

  Photosensitive area · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/807

  Pixel isolation structures · CPC title

• H10F39/014

  of CMOS image sensors · CPC title

• H10F30/225

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title