Stacked active thick film device

US12529606B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12529606-B2
Application numberUS-202217948405-A
CountryUS
Kind codeB2
Filing dateSep 20, 2022
Priority dateSep 24, 2021
Publication dateJan 20, 2026
Grant dateJan 20, 2026

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Disclosed is a stacked thick film device including a substrate, a first active element, a second active element, and an insulating dielectric layer separating the first active element and the second active element.

First claim

Opening claim text (preview).

The invention claimed is: 1 . A stacked thick film device, comprising: a substrate; a first active element; a second active element; and an insulating dielectric layer separating the first active element and the second active element, wherein the insulating dielectric layer is a thermally homogenous film having a total fired thickness less than 50 microns and includes three layers with different orientations. 2 . The stacked thick film device of claim 1 , wherein the substrate is a large format rigid engineered substrate. 3 . The stacked thick film device of claim 2 , wherein the large format rigid engineered substrate is ceramic. 4 . The stacked thick film device of claim 3 , wherein the large format rigid engineered substrate is a stabilized zirconia ceramic with 20 micro-inch Ra or smoother surface finish and a free-state flatness of less than 25 microns per 150 centimeters. 5 . The stacked thick film device of claim 1 , wherein the first active element includes a heater. 6 . The stacked film device of claim 5 , wherein the heater is a resistive film. 7 . The stacked thick film device of claim 6 , wherein the heater includes at least one high voltage resistive heating element. 8 . The stacked thick film device of claim 6 , wherein the resistive film is less than 15 microns thick. 9 . The stacked thick film device of claim 8 , wherein the resistive film includes a gold conductor having a fired thickness of 9 microns. 10 . The stacked thick film device of claim 1 , wherein the second active element includes at least one measurement element. 11 . The stacked thick film device of claim 10 , wherein the at least one measurement element is configured to be located at a heat transfer surface between a heat source and a cooling fluid. 12 . The stacked thick film device of claim 11 , wherein the at least one measurement element includes at least one measurement circuit configured to be in direct contact with a sensed environment. 13 . The stacked thick film device of claim 12 , wherein the at least one measurement circuit includes at least one temperature sensor. 14 . The stacked thick film device of claim 13 , wherein the at least one temperature sensor is a thermistor. 15 . The stacked thick film device of claim 13 , wherein the temperature sensor is configured to do at least one of: measure temperature of an actively heated surface; detect boiling initiation at the heated surface; detect an onset of critical heat flux at the heated surface; and detect impingement of coolant droplets on the heated surface. 16 . The stacked thick film device of claim 15 , further comprising an array of temperature sensors. 17 . The stacked thick film device of claim 1 , wherein the first active element and the second active element are vertically collocated on the substrate. 18 . The stacked thick film device of claim 17 , further including an encapsulation film encapsulating the thick film device. 19 . A stacked thick film device, comprising: a substrate; a first active element; a second active element; and an insulating dielectric layer separating the first active element and the second active element, wherein the insulating dielectric layer is a thermally homogenous film having a total fired thickness less than 50 microns, and the second active element includes a thermistor having a temporal response of approximately 6 microseconds or less. 20 . The stacked thick film device of claim 19 , wherein the thermistor is a film having a resistance between 25 kΩ and 60 kΩ at 21 degrees centigrade. 21 . The stacked thick film device of claim 20 , wherein the thermistor film has a minimal thermal mass and is up to 9 microns thick. 22 . A stacked thick film device, comprising: a substrate; a first active element; a second active element; and an insulating dielectric layer separating the first active element and the second active element, wherein the insulating dielectric layer is a thermally homogenous film having a total fired thickness less than 50 microns, includes three layers with different orientations, and has a 1000 VDC minimum electrical breakdown strength.

Assignees

Inventors

Classifications

  • G01K7/22Primary

    the element being a non-linear resistance, e.g. thermistor (G01K7/26 takes precedence) · CPC title

  • arrangements for monitoring a plurality of temperatures, e.g. by multiplexing · CPC title

  • G01K1/143Primary

    for measuring surface temperatures · CPC title

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Frequently asked questions

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What does patent US12529606B2 cover?
Disclosed is a stacked thick film device including a substrate, a first active element, a second active element, and an insulating dielectric layer separating the first active element and the second active element.
Who is the assignee on this patent?
Us Energy, Us Dept Energy
What technology area does this patent fall under?
Primary CPC classification G01K7/22. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 20 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).