Optical element driving device, camera module, camera-mounted device, and driving method
US-2024118587-A1 · Apr 11, 2024 · US
US12529606B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12529606-B2 |
| Application number | US-202217948405-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 20, 2022 |
| Priority date | Sep 24, 2021 |
| Publication date | Jan 20, 2026 |
| Grant date | Jan 20, 2026 |
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Disclosed is a stacked thick film device including a substrate, a first active element, a second active element, and an insulating dielectric layer separating the first active element and the second active element.
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The invention claimed is: 1 . A stacked thick film device, comprising: a substrate; a first active element; a second active element; and an insulating dielectric layer separating the first active element and the second active element, wherein the insulating dielectric layer is a thermally homogenous film having a total fired thickness less than 50 microns and includes three layers with different orientations. 2 . The stacked thick film device of claim 1 , wherein the substrate is a large format rigid engineered substrate. 3 . The stacked thick film device of claim 2 , wherein the large format rigid engineered substrate is ceramic. 4 . The stacked thick film device of claim 3 , wherein the large format rigid engineered substrate is a stabilized zirconia ceramic with 20 micro-inch Ra or smoother surface finish and a free-state flatness of less than 25 microns per 150 centimeters. 5 . The stacked thick film device of claim 1 , wherein the first active element includes a heater. 6 . The stacked film device of claim 5 , wherein the heater is a resistive film. 7 . The stacked thick film device of claim 6 , wherein the heater includes at least one high voltage resistive heating element. 8 . The stacked thick film device of claim 6 , wherein the resistive film is less than 15 microns thick. 9 . The stacked thick film device of claim 8 , wherein the resistive film includes a gold conductor having a fired thickness of 9 microns. 10 . The stacked thick film device of claim 1 , wherein the second active element includes at least one measurement element. 11 . The stacked thick film device of claim 10 , wherein the at least one measurement element is configured to be located at a heat transfer surface between a heat source and a cooling fluid. 12 . The stacked thick film device of claim 11 , wherein the at least one measurement element includes at least one measurement circuit configured to be in direct contact with a sensed environment. 13 . The stacked thick film device of claim 12 , wherein the at least one measurement circuit includes at least one temperature sensor. 14 . The stacked thick film device of claim 13 , wherein the at least one temperature sensor is a thermistor. 15 . The stacked thick film device of claim 13 , wherein the temperature sensor is configured to do at least one of: measure temperature of an actively heated surface; detect boiling initiation at the heated surface; detect an onset of critical heat flux at the heated surface; and detect impingement of coolant droplets on the heated surface. 16 . The stacked thick film device of claim 15 , further comprising an array of temperature sensors. 17 . The stacked thick film device of claim 1 , wherein the first active element and the second active element are vertically collocated on the substrate. 18 . The stacked thick film device of claim 17 , further including an encapsulation film encapsulating the thick film device. 19 . A stacked thick film device, comprising: a substrate; a first active element; a second active element; and an insulating dielectric layer separating the first active element and the second active element, wherein the insulating dielectric layer is a thermally homogenous film having a total fired thickness less than 50 microns, and the second active element includes a thermistor having a temporal response of approximately 6 microseconds or less. 20 . The stacked thick film device of claim 19 , wherein the thermistor is a film having a resistance between 25 kΩ and 60 kΩ at 21 degrees centigrade. 21 . The stacked thick film device of claim 20 , wherein the thermistor film has a minimal thermal mass and is up to 9 microns thick. 22 . A stacked thick film device, comprising: a substrate; a first active element; a second active element; and an insulating dielectric layer separating the first active element and the second active element, wherein the insulating dielectric layer is a thermally homogenous film having a total fired thickness less than 50 microns, includes three layers with different orientations, and has a 1000 VDC minimum electrical breakdown strength.
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