Optoelectronic apparatus

Patent metadata

Field	Value
Publication number	US-12529599-B2
Application number	US-202117907195-A
Country	US
Kind code	B2
Filing date	Mar 16, 2021
Priority date	Mar 24, 2020
Publication date	Jan 20, 2026
Grant date	Jan 20, 2026

Abstract

In an embodiment an optoelectronic apparatus includes a light detector having a bottom side, an upper side and at least one sidewall that extends between the upper side and the bottom side, a carrier having an upper surface on which the light detector is arranged such that the bottom side faces the carrier, at least one outer wall which is arranged on the surface of the carrier, the outer wall and the carrier forming a cavity with an opening in which the light detector resides, a filter covering the upper side of the light detector, the filter having a first threshold wavelength separating a first wavelength region from an adjacent second wavelength region, wherein the filter has a lower transmittance for light at wavelengths in the first wavelength region than for light at wavelengths in the second wavelength region and a first material layer covering the filter.

First claim

The invention claimed is:

1 . An optoelectronic apparatus comprising:
a light detector having a bottom side, an upper side and at least one sidewall that extends between the upper side and the bottom side; a carrier having an upper surface on which the light detector is arranged such that the bottom side faces the carrier; at least one outer wall, which is arranged on the surface of the carrier, the outer wall and the carrier forming a cavity with an opening in which the light detector resides; a filter covering the upper side of the light detector, the filter comprising a first threshold wavelength separating a first wavelength region from an adjacent second wavelength region, wherein the filter has a lower transmittance for light at wavelengths in the first wavelength region than for light at wavelengths in the adjacent second wavelength region; a first material layer covering the filter, the first material layer comprising a second threshold wavelength separating a third wavelength region from an adjacent fourth wavelength region, wherein the first material layer has a higher absorbance for light at wavelengths in the third wavelength region than for light at wavelengths in the adjacent fourth wavelength region, wherein the first threshold wavelength differs from the second threshold wavelength by at most ±20 nm; and a second material layer comprising a highly absorbing casting material, the second material layer arranged between the first material layer and the carrier.

2 . The optoelectronic apparatus of claim 1 ,
wherein the filter is a dielectric filter or comprises a resist material, and/or wherein the first material layer comprises epoxy or silicone and absorber particles which act as a filter.

3 . The optoelectronic apparatus of claim 1 ,
wherein the outer wall extends at a distance in a circumferential direction around the at least one sidewall of the light detector, and/or wherein the outer wall is configured to absorb light at wavelengths below and above the first threshold wavelength, and/or wherein the outer wall is blackened or darkened.

4 . The optoelectronic apparatus of claim 1 ,
wherein the second material layer completely covers the at least one sidewall of the light detector and/or the upper surface of the carrier.

5 . The optoelectronic apparatus of claim 4 , wherein the second material layer is arranged in a volume formed by the first material layer, the upper surface of the carrier, and at least one outer wall which extends on the upper surface of the carrier in a circumferential direction around the at least one sidewall of the light detector.

6 . The optoelectronic apparatus of claim 4 , wherein the second material layer is configured to absorb light at wavelengths below and above the first threshold wavelength.

7 . The optoelectronic apparatus of claim 1 , wherein the filter is formed by a third material layer comprising a resist material, and wherein the third material layer covers the upper side and the at least one sidewall of the light detector.

8 . The optoelectronic apparatus of claim 7 , wherein the third material layer is arranged between the first material layer and the carrier, and/or wherein the third material layer is the only layer arranged between the first material layer and the carrier, and/or wherein the third material layer has a thickness that is larger than a height of the light detector.

9 . The optoelectronic apparatus of claim 1 , further comprising a fourth material layer comprising a resist, the fourth material layer arranged above the first material layer.

10 . The optoelectronic apparatus of claim 9 , wherein the fourth material layer has a higher absorbance for light at wavelengths in a fifth wavelength region than for light at wavelengths in an adjacent sixth wavelength region, wherein a third threshold wavelength separates the fifth and sixth wavelength regions from each other, wherein the first threshold wavelength at least approximately corresponds to the third threshold wavelength, and wherein the first threshold wavelength differs from the third threshold wavelength by at most ±20 nm.

11 . The optoelectronic apparatus of claim 1 , wherein at least one of the first material layer, the second material layer, a third material layer or a fourth material layer covers completely a full width and a full height of the opening of the cavity that is formed by the carrier and the at least one outer wall.

12 . The optoelectronic apparatus of claim 1 , wherein in the second wavelength region the filter and the first material layer have in combination a transmittance of at least 80% with respect to an intensity of an incident light, and/or wherein the filter and the first material layer have in combination a transmittance of less than 80% in the first wavelength region.

13 . The optoelectronic apparatus of claim 1 , wherein the filter and the first material layer act as a combined filter having a cut-on or cut-off wavelength that is shifted with regard to the first threshold wavelength by at most 20 nm for angles of incidence in a range of 0° to 60° and by at most 30 nm for angles of incidence in an angel of 0° to 90°.

14 . The optoelectronic apparatus of claim 1 , further comprising a clear resin arranged between the light detector and the filter and the first material layer.

15 . A package module comprising:
one or more light sources; and one or more optoelectronic apparatuses of claim 1 .

16 . The package module of claim 15 , wherein at least one of the light sources is configured to provide light having a wavelength in the first wavelength region, and/or wherein the one or more light sources do not provide light with a wavelength in the second wavelength region.

17 . The optoelectronic apparatus of claim 1 , wherein the second material layer completely covers the at least one sidewall of the light detector.

Assignees

• Ams Osram Int Gmbh

Inventors

• Mazzillo Massimo Cataldo
• Esser Faina
• Jaeger Claus
• Boescke Tim

Classifications

• H10F77/337 Primary

  using interference filters, e.g. multilayer dielectric filters · CPC title

• H10F77/50

  Encapsulations or containers (for photovoltaic modules H10F19/80) · CPC title

• G01J3/0291

  Housings; Spectrometer accessories; Spatial arrangement of elements, e.g. folded path arrangements · CPC title

• G01J3/0259

  Monolithic · CPC title

• G02B27/0018

  with means for preventing ghost images (anti-reflection coatings G02B1/11) · CPC title