Light emitting device and method of manufacturing light emitting device

Patent metadata

Field	Value
Publication number	US-12527130-B2
Application number	US-202217947294-A
Country	US
Kind code	B2
Filing date	Sep 19, 2022
Priority date	Sep 22, 2021
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

A light emitting device includes a semiconductor light emitting element and a package that seals the semiconductor light emitting element. The package includes a base having a first upper surface region directly or indirectly supporting the semiconductor light emitting element, and a second upper surface region surrounding the first upper surface region in a plan view viewed in a direction normal to the first upper surface region. The package further includes a cover bonded to the base, an inner metal layer disposed on the second upper surface region of the base, an outer metal layer extending along the outer edge of the inner metal layer, and a slit part on the second upper surface region between the inner metal layer and the outer metal layer. In the plan view, the inner edge of the inner metal layer is positioned inward of the outer edge of the cover. In the plan view, at least a portion of the outer edge of the outer metal layer is positioned outward of the outer edge of the cover. The cover is bonded to the base via a bonding material disposed on the inner metal layer.

First claim

What is claimed is:

1 . A light emitting device comprising:
a semiconductor light emitting element; and a package that seals the semiconductor light emitting element, the package comprising:
a base comprising:
a first upper surface region directly or indirectly supporting the semiconductor light emitting element, and
a second upper surface region surrounding the first upper surface region in a plan view viewed in a direction normal to the first upper surface region,

a cover bonded to the base,
an inner metal layer disposed on the second upper surface region of the base,
an outer metal layer extending along the outer edge of the inner metal layer, and
a slit part on the second upper surface region between the inner metal layer and the outer metal layer; wherein:
in the plan view, the inner edge of the inner metal layer is positioned inward of the outer edge of the cover; in the plan view, at least a portion of the outer edge of the outer metal layer is positioned outward of the outer edge of the cover; the cover comprises:
a lower surface region facing the first upper surface region and the second upper surface region of the base,
a first cover-side metal layer in a portion of the lower surface region that faces the inner metal layer,
a second cover-side metal layer that, in the plan view, is positioned inward of the inner edge of the first cover-side metal layer in the lower surface region and extends along the inner edge of the first cover-side metal layer, and
a second cover-side slit part between the first cover-side metal layer and the second cover-side metal layer in the plan view; and
the cover is bonded to the base via a bonding material disposed on the inner metal layer.

2 . The light emitting device according to claim 1 , wherein the outer edge of the inner metal layer is positioned inward of the outer edge of the cover, and the outer edge of the outer metal layer is positioned outward of the outer edge of the cover.

3 . The light emitting device according to claim 2 , wherein a width of the slit part is in a range of 30 μm to 500 μm.

4 . The light emitting device according to claim 2 , wherein the inner metal layer and the outer metal layer are electrically connected by one or more metal branched parts.

5 . The light emitting device according to claim 1 , wherein the bonding material is a solder.

6 . The light emitting device according to claim 1 , wherein:
in the package, the semiconductor light emitting element is hermetically sealed by bonding the first cover-side metal layer and the inner metal layer via a bonding layer made of the bonding material.

7 . The light emitting device according to claim 6 , wherein, in the plan view, the first cover-side metal layer comprises an inner portion positioned inward of the inner edge of the inner metal layer.

8 . The light emitting device according to claim 7 , wherein, in the plan view, the cover comprises a ridge part disposed on the inner portion of the first cover-side metal layer along the inner edge of the inner metal layer.

9 . The light emitting device according to claim 1 , wherein the package has a height difference between the first upper surface region and the second upper surface region.

10 . The light emitting device according to claim 1 , wherein:
the base comprises a bottom part having a planar support surface, and a lateral wall part supported on a plane including the planar support surface, the first upper surface region is located in the planar support surface, and the second upper surface region is located in an upper surface of the lateral wall part positioned higher than the planar support surface, the inner metal layer and the outer metal layer are disposed on the upper surface of the lateral wall part, and the cover has a light transmitting portion that transmits light emitted from the semiconductor light emitting element.

11 . The light emitting device according to claim 1 , wherein:
the base has a planar support surface that includes the first upper surface region and the second upper surface region, the cover has a lateral wall part supported by the planar support surface and an upper surface part located on the lateral wall part, the lateral wall part comprises a light transmitting portion that transmits light emitted from the semiconductor light emitting element, and the light emitted from the semiconductor light emitting element in a direction parallel to the planar support surface is emitted from the light transmitting portion to a region outside of the package.

12 . The light emitting device according to claim 11 , wherein:
in the plan view, the base further comprises:
an additional inner metal layer positioned inward of the inner edge of the inner metal layer on the planar support surface and extending along the inner edge of the inner metal layer, and
an additional slit part between the inner metal layer and the additional inner metal layer.

13 . A light emitting device comprising:
a semiconductor light emitting element; and a package that seals the semiconductor light emitting element, the package comprising:
a base comprising:
a first upper surface region directly or indirectly supporting the semiconductor light emitting element, and
a second upper surface region surrounding the first upper surface region in a plan view viewed in a direction normal to the first upper surface region,

a cover bonded to the base,
an inner metal layer disposed on the second upper surface region of the base,
an outer metal layer extending along the outer edge of the inner metal layer, and
a slit part on the second upper surface region between the inner metal layer and the outer metal layer; wherein:
in the plan view, the inner edge of the inner metal layer is positioned inward of the outer edge of the cover; in the plan view, at least a portion of the outer edge of the outer metal layer is positioned outward of the outer edge of the cover; the cover comprises:
a lower surface region facing the first upper surface region and the second upper surface region of the base, and
a first cover-side metal layer in a portion of the lower surface region that faces the inner metal layer;
in the plan view, the first cover-side metal layer comprises an inner portion positioned inward of the inner edge of the inner metal layer; and the cover is bonded to the base via a bonding material disposed on the inner metal layer.

14 . The light emitting device according to claim 13 , wherein the outer edge of the inner metal layer is positioned inward of the outer edge of the cover, and the outer edge of the outer metal layer is positioned outward of the outer edge of the cover.

15 . The light emitting device according to claim 14 , wherein a width of the slit part is in a range of 30 μm to 500 μm.

16 . The light emitting device according to claim 14 , wherein the inner metal layer and the outer metal layer are electrically connected by one or more metal branched parts.

17 . The light emitting device according to claim 13 , wherein the bonding material is a solder.

18 . The light emitting device according to claim 13 , wherein in the package, the semiconductor light emitting element is hermetically sealed by bonding the first cover-side metal layer and the inner metal layer via a bonding layer made of the bonding material.

19 . The light emitting device according to claim 13 , wherein the package has a height difference between the first upper surface region and the second upper surfac

Assignees

• Nichia Corp

Inventors

• Miura Soichiro
• TAKASE Shota

Classifications

• H10H20/036

  of packages · CPC title

• H10H20/8506 Primary

  Containers · CPC title