Bypass diode assembly for a photovoltaic module and method for fabricating

Patent metadata

Field	Value
Publication number	US-12527094-B2
Application number	US-202418980575-A
Country	US
Kind code	B2
Filing date	Dec 13, 2024
Priority date	Dec 19, 2023
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

A bypass diode assembly and a method for fabricating the bypass diode assembly are provided, the bypass diode assembly comprising an electrically insulating tape, an electrically conductive ribbon extending over the back side of the tape and locally exposed at the front side of the tape through an opening, a semiconductor component positioned in a hole through the tape, wherein the semiconductor component comprises a diode electrically connected between a first contact pad of the semiconductor component in electrical contact with the electrically conductive ribbon and a second contact pad of the semiconductor component, and an electrically conductive ribbon portion on the front side of the tape in electrical contact with the second contact pad of the semiconductor component. The electrically conductive ribbon portion is electrically isolated from the first electrically conductive ribbon by the electrically insulating tape. A photovoltaic module comprising at least one bypass diode assembly is provided.

First claim

What is claimed is:

1 . A bypass diode assembly for a photovoltaic module, the bypass diode assembly comprising:
an electrically insulating tape extending in a longitudinal direction, the electrically insulating tape having a front side and a back side; a first electrically conductive ribbon attached to the electrically insulating tape and oriented parallel to the longitudinal direction, wherein the first electrically conductive ribbon extends over the back side of the electrically insulating tape at least between a first location and a second location spaced apart over a predetermined distance in the longitudinal direction and at least partially overlaps the first location and the second location, and wherein the first electrically conductive ribbon is locally exposed at the front side through an opening in the electrically insulation tape at the first location, wherein:
the bypass diode assembly comprises a semiconductor component positioned in a through hole through the electrically insulating tape at the second location, wherein the semiconductor component comprises:
a diode having a first diode terminal and a second diode terminal,
a first contact pad in electrical contact with the first electrically conductive ribbon and electrically connected to the first diode terminal, and
a second contact pad electrically connected the second diode terminal,

the bypass diode assembly further comprises an electrically conductive ribbon portion on the front side of the electrically insulating tape and overlapping the semiconductor component, wherein the electrically conductive ribbon portion is in electrical contact with the second contact pad of the semiconductor component and wherein the electrically conductive ribbon portion is electrically isolated from the first electrically conductive ribbon by the electrically insulating tape.

2 . The bypass diode assembly according to claim 1 , wherein the semiconductor component is a bare die Schottky diode component.

3 . The bypass diode assembly according to claim 1 , wherein the first electrically conductive ribbon and the electrically conductive ribbon portion are attached to the electrically insulating tape by an adhesive.

4 . The bypass diode assembly according to claim 1 , wherein the electrically insulating tape is an adhesive-PET-adhesive tape, comprising a polyethylene terephthalate layer sandwiched between two adhesive layers.

5 . The bypass diode assembly according to claim 1 , wherein a thickness of the electrically insulating tape is between 0.2 mm and 0.4 mm.

6 . The bypass diode assembly according to claim 1 , wherein a thickness of the first electrically conductive ribbon and of the electrically conductive ribbon portion is between 0.05 mm and 0.15 mm.

7 . The bypass diode assembly according to claim 1 , wherein the first contact pad is electrically connected to the first electrically conductive ribbon by a welded or soldered connection and wherein the second contact pad is electrically connected to the electrically conductive ribbon portion by a welded or soldered connection.

8 . The bypass diode assembly according claim 1 , wherein the first electrically conductive ribbon fully overlaps the first location and is locally exposed at the front side over substantially the entire surface area of the opening.

9 . The bypass diode assembly according to claim 1 , wherein at the location of the opening at least one portion of the electrically insulating tape covers a back side of the first electrically conductive ribbon.

10 . A photovoltaic module comprising a plurality of photovoltaic cells electrically connected in series and further comprising at least one bypass diode assembly, wherein the diode of the at least one bypass diode assembly is electrically connected in parallel to one or more of the plurality of photovoltaic cells, and wherein the at least one bypass diode assembly comprises:
an electrically insulating tape extending in a longitudinal direction, the electrically insulating tape having a front side and a back side; a first electrically conductive ribbon attached to the electrically insulating tape and oriented parallel to the longitudinal direction, wherein the first electrically conductive ribbon extends over the back side of the electrically insulating tape at least between a first location and a second location spaced apart over a predetermined distance in the longitudinal direction and at least partially overlaps the first location and the second location, and wherein the first electrically conductive ribbon is locally exposed at the front side through an opening in the electrically insulation tape at the first location, wherein:
the bypass diode assembly comprises a semiconductor component positioned in a through hole through the electrically insulating tape at the second location, wherein the semiconductor component comprises:
a diode having a first diode terminal and a second diode terminal,
a first contact pad in electrical contact with the first electrically conductive ribbon and electrically connected to the first diode terminal, and
a second contact pad electrically connected the second diode terminal,

the bypass diode assembly further comprises an electrically conductive ribbon portion on the front side of the electrically insulating tape and overlapping the semiconductor component, wherein the electrically conductive ribbon portion is in electrical contact with the second contact pad of the semiconductor component and wherein the electrically conductive ribbon portion is electrically isolated from the first electrically conductive ribbon by the electrically insulating tape.

11 . A method for fabricating a bypass diode assembly, the method comprises:
providing an electrically insulating tape extending in a longitudinal direction and having a front side and a back side; making an opening in the electrically insulating tape at at least one first location of the electrically insulating tape; making a through hole through the electrically insulating tape at at least one second location spaced apart over a predetermined distance from the at least one first location along the longitudinal direction; afterwards forming a tape arrangement by providing a first electrically conductive ribbon oriented parallel to the longitudinal direction of the electrically insulating tape, on the back side thereof, the first electrically conductive ribbon extending at least between a first location and a second location and at least partially overlapping the first location and the second location, the first electrically conductive ribbon being locally exposed at the front side through the opening at the first location; placing the tape arrangement on a support surface, with the front side of the electrically insulating tape facing away from the support surface, so that an open cavity is created at the location of the through hole, wherein at least part of a bottom of the open cavity is formed by the first electrically conductive ribbon; positioning a semiconductor component in the through hole, the semiconductor component comprising a diode having a first diode terminal and a second diode terminal, a first contact pad electrically connected to the first diode terminal and a second contact pad electrically connected to the second diode terminal, wherein the first contact pad is provided in physical contact with the first electrically conductive ribbon at the bottom of the open cavity; placing an electrically conductive ribbon portion on the front side of the electrically insulating tape, wherein the electrically conductive ribbon portion overlaps the semiconductor component, wherein the electrically conductive ribbon

Assignees

• Imec Vzw
• Univ Hasselt

Inventors

• Meuris Marc

Classifications

• H10D8/60

  Schottky-barrier diodes · CPC title

• H10F19/902

  for series or parallel connection of photovoltaic cells · CPC title

• H10D80/231

  Diodes covered by H10D8/00 · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H10F19/90

  Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers (between thin-film photovoltaic cells on a single substrate H10F19/35) · CPC title