Capacitor, semiconductor device including the same, and method of fabricating capacitor

Patent metadata

Field	Value
Publication number	US-12527013-B2
Application number	US-202418626726-A
Country	US
Kind code	B2
Filing date	Apr 4, 2024
Priority date	Feb 26, 2020
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

A capacitor includes: a bottom electrode; a top electrode over the bottom electrode; a dielectric film between the bottom electrode and the top electrode; and a doped Al 2 O 3 film between the top electrode and the dielectric film, wherein the doped Al 2 O 3 film includes a first dopant, and an oxide including the same element as the first dopant has a higher dielectric constant than a dielectric constant of Al 2 O 3 .

First claim

What is claimed is:

1 . A capacitor comprising:
a bottom electrode; a top electrode over the bottom electrode; a dielectric film between the bottom electrode and the top electrode; and a doped Al 2 O 3 film between the top electrode and the dielectric film, the doped Al 2 O 3 film including a first dopant and a second dopant that is different from the first dopant, wherein the top electrode directly contacts a top surface of the doped Al 2 O 3 film.

2 . The capacitor of claim 1 , wherein the first dopant comprises one of Ca, Sr, Ba, Sc, Y, La, Ti, Hf, Zr, Nb, Ta, Ce, Pr, Nd, Gd, Dy, Yb, and Lu.

3 . The capacitor of claim 1 , wherein the doped Al 2 O 3 film comprises the first dopant in an amount greater than 0 at % and less than 50 at %.

4 . The capacitor of claim 1 , wherein the second dopant comprises one of Ca, Sr, Ba, Sc, Y, La, Nb, Ti, Hf, Zr, Ta, Ce, Pr, Nd, Gd, Dy, Yb, and Lu.

5 . The capacitor of claim 1 , wherein the first dopant and the second dopant are present in an amount greater than 0 at % and less than 50 at % in total in the doped Al 2 O 3 film.

6 . The capacitor of claim 1 , wherein the bottom electrode directly contacts the dielectric film.

7 . The capacitor of claim 1 , wherein
the first dopant comprises Hf, and the second dopant comprises Zr.

8 . The capacitor of claim 1 , wherein
the bottom electrode comprises a metal nitride represented by MM′N, M is a metal element, M′ is an element that is different from M, and N is nitrogen.

9 . The capacitor of claim 8 , wherein the bottom electrode comprises carbon impurities in an amount of greater than 0% and less than or equal to 1%.

10 . The capacitor of claim 8 , wherein
M is Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, TI, Pb, Bi, Po, Fr, Ra, Ac, Th, Pa, or U.

11 . The capacitor of claim 8 , wherein
M′ is H, Li, Be, B, N, O, Na, Mg, Al, Si, P, S, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi, Po, Fr, Ra, Ac, Th, Pa, or U.

12 . The capacitor of claim 8 , wherein,
the metal nitride is represented by MxM′yNz,

0
<
x
≤
2

,

0
<
y
≤
2

,
and

0
<
z
≤
4.

13 . The capacitor of claim 1 , wherein
the dielectric film has a thickness of greater than 0 nm and less than 5 nm, and the doped Al 2 O 3 film has a thickness of greater than 0 nm and less than 2 nm.

14 . The capacitor of claim 1 , wherein
the dielectric film directly contacts a bottom surface of the doped Al 2 O 3 film.

15 . The capacitor of claim 1 , wherein the top electrode comprises TiN, MON, CON, TaN, TiAlN, TaAlN, W, Ru, RuO 2 , SrRuO 3 , Ir, IrO 2 , Pt, PtO, (Ba, Sr)RuO 3 (BSRO), CaRuO 3 (CRO), (La,Sr)CoO 3 (LSCO), or a combination thereof.

16 . A semiconductor device comprising:
a substrate; a gate structure on the substrate; a first source/drain region and a second source/drain region, both arranged in upper portions of the substrate; and the capacitor of claim 1 on the substrate, wherein the bottom electrode is electrically connected to the first source/drain region.

17 . The semiconductor device of claim 16 , wherein the first dopant and the second dopant are selected from different elements among Ca, Sr, Ba, Sc, Y, La, Ti, Hf, Zr, Nb, Ta, Ce, Pr, Nd, Gd, Dy, Yb, and Lu.

18 . The semiconductor device of claim 16 , wherein the doped Al 2 O 3 film comprises the first dopant and the second dopant in an amount greater than 0 at % and less than 50 at % in total.

19 . The semiconductor device of claim 16 , wherein
the top electrode directly contacts a top surface of the doped Al 2 O 3 film, and the dielectric film directly contacts a bottom surface of the doped Al 2 O 3 film.

20 . The capacitor of claim 1 , further comprising:
an interfacial film between the bottom electrode and the dielectric film, wherein the interfacial film comprises an oxide comprising a metal element that is included in the bottom electrode.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Song Jeonggyu
• Kim Younsoo
• Lee Jaeho

Classifications

• H10D1/696 Primary

  comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688) · CPC title

• H10B12/31

  having a storage electrode stacked over the transistor · CPC title

• H10B12/30

  DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells · CPC title

• H10D1/692

  Electrodes · CPC title

• H10D1/684

  the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers · CPC title