Light detection device and method for driving light sensor

Patent metadata

Field	Value
Publication number	US-12526550-B2
Application number	US-202117922806-A
Country	US
Kind code	B2
Filing date	Mar 17, 2021
Priority date	May 8, 2020
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

A light detection device includes a controller that controls electric potentials of a charge collection electrode and a transfer gate electrode so that potential energy in a region immediately below the charge collection electrode is a first level, and potential energy in a region immediately below the transfer gate electrode is higher than the potential energy in the region immediately below the charge collection electrode in a first period, and so that the potential energy in the region immediately below the charge collection electrode is a second level higher than the first level, and the potential energy in the region immediately below the transfer gate electrode is lower than the potential energy in the region immediately below the charge collection electrode in a second period after the first period.

First claim

The invention claimed is:

1 . A light detection device comprising:
a light sensor comprising a semiconductor substrate, and a controller that controls the light sensor, wherein: the light sensor includes: a charge generation region that generates charges in response to incident light; a charge accumulation region in which charges generated in the charge generation region are accumulated, the charge accumulation region being disposed on the charge generation region in a thickness direction of the semiconductor substrate; a charge transfer region to which charges are transferred from the charge accumulation region; a charge collection electrode disposed on the charge accumulation region, the charge collection electrode overlapping the charge accumulation region and the charge generation region in the thickness direction of the semiconductor substrate; and
a transfer gate electrode disposed on a region between the charge accumulation region and the charge transfer region;
an intervening region having a conductive type different from a conductive type of the charge accumulation region and disposed between the charge accumulation region and the charge collection electrode; and
a well region that is adjacent to the intervening region and has a conductive type same as the conductive type of the intervening region,
wherein:
the charge transfer region is formed in the well region,
the well region is grounded, and
a carrier concentration of the intervening region is smaller than a carrier concentration of the well region,
the controller: controls electric potentials of the charge collection electrode and the transfer gate electrode so that potential energy in a region immediately below the charge collection electrode is a first level, and potential energy in a region immediately below the transfer gate electrode is higher than the potential energy in the region immediately below the charge collection electrode in a first period; controls electric potentials of the charge collection electrode and the transfer gate electrode so that the potential energy in the region immediately below the charge collection electrode is a second level higher than the first level, and the potential energy in the region immediately below the transfer gate electrode is lower than the potential energy in the region immediately below the charge collection electrode in a second period after the first period; and controls potential energy of the charge accumulation region in the first period and the second period by controlling the electric potential of the charge collection electrode, and in the light sensor, a region in which potential energy is controlled by controlling the electric potential of the charge collection electrode is adjacent to a region in which potential energy is controlled by controlling electric potential of the transfer gate electrode.

2 . The light detection device according to claim 1 , wherein the charge generation region includes an avalanche multiplication region.

3 . The light detection device according to claim 1 , wherein:
the light sensor further includes: an overflow region; and an overflow gate electrode disposed on a region between the charge accumulation region and the overflow region, and the controller controls electric potentials of the charge collection electrode, the transfer gate electrode, and the overflow gate electrode so that potential energy in a region immediately below the overflow gate electrode is higher than the potential energy in the region immediately below the charge collection electrode and is lower than the potential energy in the region immediately below the transfer gate electrode in the first period.

4 . The light detection device according to claim 1 , wherein the charge transfer region is disposed on the charge generation region in the thickness direction of the semiconductor substrate.

5 . The light detection device according to claim 1 , further comprising a well region disposed on the charge generation region in the thickness direction of the semiconductor substrate, wherein the charge transfer region is disposed inside the well region.

6 . A method for driving a light sensor, the light sensor including:
a semiconductor substrate; a charge generation region that generates charges in response to incident light; a charge accumulation region in which charges generated in the charge generation region are accumulated, the charge accumulation region being disposed on the charge generation region in a thickness direction of the semiconductor substrate; a charge transfer region to which charges are transferred from the charge accumulation region; a charge collection electrode disposed on the charge accumulation region, the charge collection electrode overlapping the charge accumulation region and the charge generation region in the thickness direction of the semiconductor substrate; and a transfer gate electrode disposed on a region between the charge accumulation region and the charge transfer region; an intervening region having a conductive type different from a conductive type of the charge accumulation region and disposed between the charge accumulation region and the charge collection electrode; and a well region that is adjacent to the intervening region and has a conductive type same as the conductive type of the intervening region, wherein: the charge transfer region is formed in the well region, the well region is grounded, and a carrier concentration of the intervening region is smaller than a carrier concentration of the well region, and the method for driving the light sensor comprising: a first step of controlling electric potentials of the charge collection electrode and the transfer gate electrode so that potential energy in a region immediately below the charge collection electrode is a first level, and potential energy in a region immediately below the transfer gate electrode is higher than the potential energy in the region immediately below the charge collection electrode; and a second step of controlling electric potentials of the charge collection electrode and the transfer gate electrode so that the potential energy in the region immediately below the charge collection electrode is a second level higher than the first level, and the potential energy in the region immediately below the transfer gate electrode is lower than the potential energy in the region immediately below the charge collection electrode after the first step, wherein in the first step and the second step, potential energy of the charge accumulation region is controlled by controlling the electric potential of the charge collection electrode, and wherein in the light sensor, a region in which potential energy is controlled by controlling the electric potential of the charge collection electrode is adjacent to a region in which potential energy is controlled by controlling electric potential of the transfer gate electrode.

7 . The method according to claim 6 , wherein the charge transfer region is disposed on the charge generation region in the thickness direction of the semiconductor substrate.

8 . The method according to claim 6 , wherein the charge transfer region is disposed inside a well region, the well region being disposed on the charge generation region in the thickness direction of the semiconductor substrate.

9 . A light detection device comprising:
a light sensor comprising a semiconductor substrate, and a controller that controls the light sensor, wherein: the light sensor includes:
a charge generation region that generates charges in response to incident light;
a charge accumulation region in which charges generated in the charge generation reg

Assignees

• Hamamatsu Photonics Kk

Inventors

• Mase Mitsuhito
• Nakano Masaru
• HIRAMITSU Jun
• Shimada Akihiro
• Ishii Hiroaki
• Ito Toshinori
• Tanaka Yuma

Classifications

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H10F39/8033

  Photosensitive area · CPC title

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H10F39/12

  Image sensors · CPC title