Semiconductor integrated circuit device

Patent metadata

Field	Value
Publication number	US-12525939-B2
Application number	US-202218054164-A
Country	US
Kind code	B2
Filing date	Nov 10, 2022
Priority date	Nov 12, 2021
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

Disclosed is a semiconductor integrated circuit device including: a switching transistor; a terminal to receive a control signal from outside; and a control circuit that controls the switching transistor based on the control signal. The control circuit includes: a reference voltage source that generates a reference voltage from the DC voltage; a differential amplifier to receive the reference voltage and a voltage of the voltage output terminal, and output a voltage applied to a control terminal of the switching transistor; and a logic circuit that generates a signal to control an operation state of the differential amplifier based on the control signal. According to an output signal of the logic circuit, the differential amplifier controls the switching transistor to be on in response to the control signal being a first logic level, and to be off in response to the control signal being a second logic level.

First claim

What is claimed is:

1 . A semiconductor integrated circuit device, comprising:
a switching transistor that is connected between a voltage output terminal and a voltage input terminal to which a DC voltage is input; a terminal to which a control signal is input from outside; and a control circuit that controls the switching transistor to an on state or an off state based on the control signal, wherein the control circuit includes:
a reference voltage source that generates a reference voltage from the DC voltage which is input to the voltage input terminal;
a differential amplifier to which the reference voltage and a voltage of the voltage output terminal are directly input, and which outputs a voltage to be applied to a control terminal of the switching transistor; and
a logic circuit that generates a signal to control an operation state of the differential amplifier based on the control signal input to the terminal,
wherein according to an output signal of the logic circuit, the differential amplifier controls the switching transistor to the on state in response to the control signal being a first logic level, and controls the switching transistor to the off state in response to the control signal being a second logic level, and wherein a voltage lowered by the reference voltage from the DC voltage input to the voltage input terminal is output to the voltage output terminal.

2 . The semiconductor integrated circuit device according to claim 1 , wherein the switching transistor has a characteristic that an on-resistance of the switching transistor satisfies a condition of Ron<Vref/Iout, Ron being the on-resistance, Vref being the reference voltage, and Iout being an output current that flows toward the voltage output terminal from the switching transistor.

3 . The semiconductor integrated circuit device according to claim 1 , wherein:
the differential amplifier includes a differential input stage that comprises a pair of differential transistors and an output stage that is provided to a succeeding stage of the differential input stage, a transistor in the output stage comprises a control terminal connected to an output node in the differential input stage, and a first switch element that is controlled to be turned on or off based on a signal output from the logic circuit is provided between the control terminal of the transistor in the output stage and a ground point, and in response to the control signal being the second logic level, an operation current of the differential input stage is interrupted, and a differential amplifying operation of the differential amplifier is stopped in a state in which the switching transistor is maintained in the off state.

4 . The semiconductor integrated circuit device according to claim 3 , wherein:
each of the switching transistor and the transistor in the output stage includes a P-channel MOS transistor, and the transistor in the output stage comprises a source terminal connected to the voltage input terminal, the transistor in the output stage is turned on by the first switch element being turned on in response to the control signal being the second logic level, and the transistor in the output stage maintains the switching transistor in the off state.

5 . The semiconductor integrated circuit device according to claim 3 , wherein;
a second switch element that is controlled to be turned on or off based on a signal output from the logic circuit is connected between the reference voltage source and a ground point, and the reference voltage source stops operating by the second switch element being turned off in response to the control signal being the second logic level.

6 . The semiconductor integrated circuit device according to claim 3 , wherein:
the switching transistor includes an N-channel MOS transistor, and a bootstrap circuit that increases a level of an output of the differential amplifier is provided between an output terminal of the differential amplifier and the control terminal of the switching transistor.

Assignees

• Takano Yoichi
• Mitsumi Electric Co Ltd

Inventors

• Takano Yoichi

Classifications

• H03F3/45179

  using MOSFET transistors as the active amplifying circuit (H03F3/45278 takes precedence) · CPC title

• H03F2203/7227

  the gated amplifier being switched on or off by a switch in the supply circuit of the amplifier · CPC title

• H03K2217/0063

  High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load · CPC title

• H03K17/687

  the devices being field-effect transistors · CPC title

• H03F3/72 Primary

  Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal · CPC title