Hybrid vacuum electronics communication and sensor system

Patent metadata

Field	Value
Publication number	US-12525919-B2
Application number	US-202217730835-A
Country	US
Kind code	B2
Filing date	Apr 27, 2022
Priority date	Apr 27, 2021
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

A device may include a substrate and an oscillation circuit integrated with the substrate. The oscillation circuit may include a field-emission-based vacuum transistor. The oscillation circuit may also include a capacitive transducer. An oscillation frequency of the oscillation circuit may be indicative of a magnitude of a temperature, a pressure, or a vibration at the capacitive transducer.

First claim

What is claimed is:

1 . A device comprising:
a substrate; and an oscillation circuit integrated with the substrate, the oscillation circuit comprising:
a field-emission-based vacuum transistor; and
a capacitive transducer, wherein the capacitive transducer includes a thermal expansion material, and wherein a variable capacitance of the capacitive transducer is based on a temperature of the thermal expansion material,
wherein the field-emission-based vacuum transistor and the capacitive transducer are configured in combination with other components to effect and sustain oscillation.

2 . The device of claim 1 , wherein the field-emission-based vacuum transistor comprises:
a collector; an emitter; and at least one gate positioned between the collector and the emitter, wherein the emitter has a pointed edge in proximity to the at least one gate, and wherein a space between the collector and the emitter is substantially void of gases and materials.

3 . The device of claim 1 , wherein the oscillation circuit is a feedback oscillation circuit, wherein the field-emission-based vacuum transistor is a first field-emission-based vacuum transistor, wherein the feedback oscillation circuit further comprises at least a second field-emission-based vacuum transistor.

4 . The device of claim 1 , wherein the oscillation circuit is a Wein bridge oscillation circuit, wherein the field-emission-based vacuum transistor is a first field-emission-based vacuum transistor, wherein the oscillation circuit further comprises additional field-emission-based vacuum transistors.

5 . The device of claim 1 , wherein the oscillation circuit is a Colpitts oscillation circuit, wherein the Colpitts oscillation circuit further comprises an inductor.

6 . The device of claim 5 , wherein the capacitive transducer is a first capacitive transducer, and wherein the Colpitts oscillation circuit further comprises a second capacitive transducer.

7 . The device of claim 1 , wherein the oscillation circuit is a ring oscillation circuit, wherein the field-emission-based vacuum transistor is a first field-emission-based vacuum transistor, and wherein the ring oscillation circuit further comprises additional field-emission-based vacuum transistors.

8 . The device of claim 7 , wherein the capacitive transducer is a first capacitive transducer, and wherein the ring oscillation circuit further comprises a second capacitive transducer.

9 . The device of claim 1 , wherein the substrate comprises a material capable of withstanding any temperature between −80° C. and 800° C.

10 . The device of claim 1 , wherein the substrate comprises a material capable of withstanding radiation exposure greater than 1×10 6 rad.

11 . The device of claim 1 , wherein the oscillation circuit is a first oscillation circuit, wherein the field-emission-based vacuum transistor is a first field-emission-based vacuum transistor, wherein the capacitive transducer is a first capacitive transducer, the device further comprising:
a second oscillation circuit, the second oscillation circuit comprising: a second field-emission-based vacuum transistor; and a second capacitive transducer, wherein the first oscillation circuit is configured to have a first oscillation frequency in response to a set of stimuli at the first capacitive transducer, and wherein the second oscillation circuit is configured to have a second oscillation frequency in response to the set of stimuli at the second capacitive transducer that is different than the first oscillation frequency.

12 . The device of claim 11 , further comprising:
one or more additional oscillation circuits, the one or more additional oscillation circuits comprising: one or more additional field-emission-based vacuum transistors; and one or more additional capacitive transducers, wherein the one or more additional oscillation circuits are configured to have additional oscillation frequencies in response to the set of stimuli at the one or more additional capacitive transducers that are different than the first oscillation frequency and the second oscillation frequency, and that are different from each other.

13 . A device comprising:
an oscillation circuit, the oscillation circuit comprising: at least one field-emission-based vacuum transistor; and at least one capacitive transducer, wherein the capacitive transducer comprises a cantilever positioned between a first electrode and a second electrode, and wherein a variable capacitance of the capacitive transducer is based on vibration of the cantilever, wherein the oscillation circuit omits any thermionic-emission-based vacuum device.

14 . The device of claim 13 , wherein an oscillation frequency of the oscillation circuit is based on the variable capacitance of the capacitive transducer.

15 . The device of claim 14 , wherein the oscillation frequency is indicative of a magnitude of the vibration.

16 . The device of claim 15 , further comprising additional oscillation circuits, the additional oscillation circuits comprising:
additional field-emission-based vacuum transistors; and additional capacitive transducers, wherein additional oscillation frequencies of the additional oscillation circuits are indicative of magnitudes of temperatures, pressures, or additional vibrations at the additional capacitive transducers.

17 . A device comprising:
a substrate; and an oscillation circuit integrated with the substrate, the oscillation circuit comprising:
a first field-emission-based vacuum transistor;
additional field-emission-based vacuum transistors; and
a capacitive transducer,
wherein the oscillation circuit is a Wein bridge oscillation circuit, and wherein the first field-emission-based vacuum transistor, the additional field-emission-based vacuum transistors, and the capacitive transducer are configured in combination with other components to effect and sustain oscillation.

18 . The device of claim 17 , wherein the capacitive transducer comprises:
a first electrode positioned on a first wall; and a second electrode positioned on a second wall, wherein a distance between the first electrode and the second electrode is proportional to a pressure exerted on the first wall, the second wall, or both, and wherein a variable capacitance of the capacitive transducer is based on the pressure.

19 . The device of claim 17 , wherein the oscillation circuit is a feedback oscillation circuit, wherein the field-emission-based vacuum transistor is a first field-emission-based vacuum transistor, wherein the feedback oscillation circuit further comprises at least a second field-emission-based vacuum transistor.

20 . The device of claim 17 , wherein the substrate comprises a material capable of withstanding any temperature between −80° C. and 800° C. and capable of withstanding radiation exposure greater than 1×10 6 rad.

Assignees

• Univ Boise State

Inventors

• Browning Jim
• Bhattacharya Ranajoy
• Hay Robert

Classifications

• G01D5/24

  by varying capacitance · CPC title

• H03B28/00

  Generation of oscillations by methods not covered by groups H03B5/00 - H03B27/00, including modification of the waveform to produce sinusoidal oscillations (analogue function generators for performing computing operations G06G7/26; use of transformers for conversion of waveform in AC-AC converters H02M5/18) · CPC title

• H03B11/02

  excited by spark (spark gaps therefor H01T9/00) · CPC title

• G01L9/12

  by making use of variations in capacitance {, i.e. electric circuits therefor} · CPC title

• G01L1/144

  with associated circuitry (G01L1/146 and G01L1/148 take precedence) · CPC title