Semiconductor device and method of forming double-sided rectifying antenna on power module

Patent metadata

Field	Value
Publication number	US-12525518-B2
Application number	US-202318314626-A
Country	US
Kind code	B2
Filing date	May 9, 2023
Priority date	May 9, 2023
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

A semiconductor device has a substrate and a first electrical interconnect structure formed over a first surface of the substrate. A second electrical interconnect structure is formed over a second surface of the substrate. An electrical component is disposed over the first surface of the substrate or over the second surface of the substrate. A first antenna is formed over the first electrical interconnect structure. A second antenna is formed over the second electrical interconnect structure. The first electrical interconnect structure has an insulating material formed over the first surface of the substrate, and a conductive via formed through the insulating material. Alternatively, the first electrical interconnect structure has an insulating layer formed over the first surface of the substrate, a conductive layer formed over the insulating layer, and a conductive via formed through the insulating layer and conductive layer.

First claim

What is claimed:

1 . A semiconductor device, comprising:
a substrate; a first electrical interconnect structure formed over a first surface of the substrate; a first conductive via extending through the substrate and further extending through the first electrical interconnect structure; a second electrical interconnect structure formed over a second surface of the substrate opposite the first surface of the substrate; a device layer formed over the second electrical interconnect structure; a second conductive via extending through the device layer; a first antenna formed over the first electrical interconnect structure; and a second antenna formed over the device layer.

2 . The semiconductor device of claim 1 , wherein the device layer includes an electrical component disposed over the second surface of the substrate.

3 . The semiconductor device of claim 2 , wherein the device layer further includes
an insulating material formed over the electrical component and second surface of the substrate.

4 . The semiconductor device of claim 1 , further including:
an insulating layer formed over the first surface of the substrate or over the second surface of the substrate; a conductive layer formed over the insulating layer; and a conductive via formed through the insulating layer and conductive layer.

5 . The semiconductor device of claim 1 , wherein the first electrical interconnect structure and second electrical interconnect structure and first antenna and second antenna are each disposed at a different vertical displacement from the substrate.

6 . The semiconductor device of claim 1 , wherein the first electrical interconnect structure and second electrical interconnect structure provide isolation between the first antenna and second antenna.

7 . A semiconductor device, comprising:
a substrate; a first antenna disposed over a first surface of the substrate; and a second antenna disposed over a second surface of the substrate opposite the first surface of the substrate and adapted to operate simultaneously with the first antenna and at a different frequency from the first antenna; further including: a first electrical interconnect structure formed over the first surface of the substrate; a first conductive via extending through the substrate and first electrical interconnect structure; a second electrical interconnect structure formed over the second surface of the substrate; a device layer formed over the second electrical interconnect structure; and a second conductive via extending through the device layer.

8 . The semiconductor device of claim 7 , further including an electrical component disposed over the first surface of the substrate or over the second surface of the substrate.

9 . The semiconductor device of claim 7 , wherein the device layer includes
an insulating material formed over the second surface of the substrate.

10 . The semiconductor device of claim 7 , further including:
an insulating layer formed over the first surface of the substrate or over the second surface of the substrate; a conductive layer formed over the insulating layer; and a conductive via formed through the insulating layer and conductive layer.

11 . The semiconductor device of claim 7 , wherein the first electrical interconnect structure and second electrical interconnect structure and first antenna and second antenna are each disposed at a different vertical displacement from the substrate.

12 . The semiconductor device of claim 7 , wherein the first electrical interconnect structure and second electrical interconnect structure provide isolation between the first antenna and second antenna.

13 . A method of making a semiconductor device, comprising:
providing a substrate; forming a first electrical interconnect structure over a first surface of the substrate; forming a first conductive via extending through the substrate and first electrical interconnect structure; forming a second electrical interconnect structure over a second surface of the substrate opposite the first surface of the substrate; forming a first antenna over the first electrical interconnect structure; and forming a second antenna over the second electrical interconnect structure.

14 . The method of claim 13 , further including disposing an electrical component over the first surface of the substrate or over the second surface of the substrate.

15 . The method of claim 13 , further including:
forming an insulating material over the first surface of the substrate or over the second surface of the substrate; and forming a conductive via through the insulating material.

16 . The method of claim 13 , further including:
forming an insulating layer over the first surface of the substrate or over the second surface of the substrate; forming a conductive layer over the insulating layer; and forming a conductive via through the insulating layer and conductive layer.

17 . The method of claim 13 , wherein the first electrical interconnect structure and second electrical interconnect structure and first antenna and second antenna are each disposed at a different vertical displacement from the substrate.

18 . The method of claim 13 , wherein the first electrical interconnect structure and second electrical interconnect structure provide isolation between the first antenna and second antenna.

19 . The method of claim 13 , further including:
forming a device layer over the second electrical interconnect structure; and forming a second conductive via extending through the device layer, wherein the second antenna is formed over the device layer.

20 . A method of making a semiconductor device, comprising:
providing a substrate; disposing a first antenna over a first surface of the substrate; disposing a second antenna over a second surface of the substrate opposite the first surface of the substrate and adapted to operate simultaneously with the first antenna and at a different frequency from the first antenna; forming a first electrical interconnect structure over the first surface of the substrate; a second electrical interconnect structure formed over the second surface of the substrate; forming a device layer over the second electrical interconnect structure; and forming a second conductive via extending through the device layer, wherein the second antenna is formed over the device layer.

21 . The method of claim 20 , further including disposing an electrical component over the first surface of the substrate or over the second surface of the substrate.

22 . The method of claim 20 , further including:
forming an insulating material over the first surface of the substrate or over the second surface of the substrate; and forming a conductive via through the insulating material.

23 . The method of claim 20 , further including:
forming an insulating layer over the first surface of the substrate or over the second surface of the substrate; forming a conductive layer over the insulating layer; and forming a conductive via through the insulating layer and conductive layer.

24 . The method of claim 20 , wherein the first electrical interconnect structure and second electrical interconnect structure and first antenna and second antenna are each disposed at a different vertical displacement from the substrate.

Assignees

• Stats Chippac Pte Ltd

Inventors

• Quan Chunhe
• Lee Jinyoung
• Park Hyungwoo

Classifications

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W70/05

  of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title

• H10W44/501

  Inductive arrangements (H10W44/20 takes precedence) · CPC title

• H10W70/65

  Shapes or dispositions of interconnections · CPC title

• H10W72/07236

  Soldering or alloying · CPC title