Surface-acoustic-wave temperature and pressure sensing device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-12523545-B2
Application number	US-202217836565-A
Country	US
Kind code	B2
Filing date	Jun 9, 2022
Priority date	Nov 9, 2021
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

Disclosed in the present disclosure are a surface-acoustic-wave temperature and pressure sensing device and a manufacturing method thereof. The surface-acoustic-wave temperature and pressure sensing device includes a first high-temperature-resistant substrate and a second high-temperature-resistant substrate bonded together, where a recess is formed in the second high-temperature-resistant substrate to form a sealed cavity between the first high-temperature-resistant substrate and the second high-temperature-resistant substrate; first surface-acoustic-wave temperature sensors and surface-acoustic-wave pressure sensors are formed on a first surface of the first high-temperature-resistant substrate located in the cavity, and second surface-acoustic-wave temperature sensors are formed on a second surface of the first high-temperature-resistant substrate opposite the first surface; and the first surface-acoustic-wave temperature sensors, the second surface-acoustic-wave temperature sensors, and the surface-acoustic-wave pressure sensors are electrically connected to one another.

First claim

What is claimed is:

1 . A surface-acoustic-wave temperature and pressure sensing device, comprising:
a first high-temperature-resistant substrate; and a second high-temperature-resistant substrate bonded to the first high-temperature-resistant substrate, wherein a recess is formed in the second high-temperature-resistant substrate to form a sealed cavity between the first high-temperature-resistant substrate and the second high-temperature-resistant substrate; first surface-acoustic-wave temperature sensors and surface-acoustic-wave pressure sensors are formed on a first surface of the first high-temperature-resistant substrate located in the cavity, and second surface-acoustic-wave temperature sensors are formed on a second surface of the first high-temperature-resistant substrate opposite the first surface; and wherein the first surface-acoustic-wave temperature sensors, the second surface-acoustic-wave temperature sensors, and the surface-acoustic-wave pressure sensors are electrically connected to one another; wherein the surface-acoustic-wave pressure sensors are located in a center of the first surface inside the cavity, and the first surface-acoustic-wave temperature sensors are located on an edge of the first surface inside the cavity; wherein the second surface-acoustic-wave temperature sensors are opposite to the first surface-acoustic-wave temperature sensors.

2 . The surface-acoustic-wave temperature and pressure sensing device according to claim 1 , wherein both the first high-temperature-resistant substrate and the second high-temperature-resistant substrate are made of lanthanum gallium silicate.

3 . The surface-acoustic-wave temperature and pressure sensing device according to claim 1 , wherein through holes are formed in the first high-temperature-resistant substrate and filled with conductive metals for electrically connecting the second surface-acoustic-wave temperature sensors to the first surface-acoustic-wave temperature sensors and the surface-acoustic-wave pressure sensors.

4 . The surface-acoustic-wave temperature and pressure sensing device according to claim 1 , further comprising protective layers respectively covering the first surface-acoustic-wave temperature sensors, the second surface-acoustic-wave temperature sensors, and the surface-acoustic-wave pressure sensors.

5 . A manufacturing method for a surface-acoustic-wave temperature and pressure sensing device, the manufacturing method comprising:
(1) forming a recess in a second high-temperature-resistant substrate; (2) forming first surface-acoustic-wave temperature sensors and surface-acoustic-wave pressure sensors on a first surface of a first high-temperature-resistant substrate; (3) bonding the first high-temperature-resistant substrate and the second high-temperature-resistant substrate to form a sealed cavity therebetween, the first surface-acoustic-wave temperature sensors and the surface-acoustic-wave pressure sensors being located in the sealed cavity; and (4) forming second surface-acoustic-wave temperature sensors on a second surface of the first high-temperature-resistant substrate opposite the first surface; wherein the surface-acoustic-wave pressure sensors are located in a center of the first surface inside the cavity, and the first surface-acoustic-wave temperature sensors are located on an edge of the first surface inside the cavity; wherein the second surface-acoustic-wave temperature sensors are opposite to the first surface-acoustic-wave temperature sensors.

6 . The manufacturing method according to claim 5 , wherein step (2) further comprises: forming protective layers respectively on the first surface-acoustic-wave temperature sensors and the surface-acoustic-wave pressure sensors.

7 . The manufacturing method according to claim 5 , wherein step (4) further comprises: forming protective layers respectively on the second surface-acoustic-wave temperature sensors.

8 . The manufacturing method according to claim 5 , further comprising: between step (2) and step (3), forming through holes in the first high-temperature-resistant substrate; and filling conductive metals in the through holes, the conductive metals being electrically connected to the first surface-acoustic-wave temperature sensors and the surface-acoustic-wave pressure sensors.

9 . The manufacturing method according to claim 6 , further comprising: between step (2) and step (3), forming through holes in the first high-temperature-resistant substrate; and filling conductive metals in the through holes, the conductive metals being electrically connected to the first surface-acoustic-wave temperature sensors and the surface-acoustic-wave pressure sensors.

10 . The manufacturing method according to claim 7 , further comprising: between step (2) and step (3), forming through holes in the first high-temperature-resistant substrate; and filling conductive metals in the through holes, the conductive metals being electrically connected to the first surface-acoustic-wave temperature sensors and the surface-acoustic-wave pressure sensors.

11 . The manufacturing method according to claim 8 , further comprising: after step (4), forming wires on the second surface for electrically connecting the second surface-acoustic-wave temperature sensors and the conductive metals.

12 . The manufacturing method according to claim 9 , further comprising: after step (4), forming wires on the second surface for electrically connecting the second surface-acoustic-wave temperature sensors and the conductive metals.

13 . The manufacturing method according to claim 10 , further comprising: after step (4), forming wires on the second surface for electrically connecting the second surface-acoustic-wave temperature sensors and the conductive metals.

Assignees

• Univ North China

Inventors

• Tan Qiulin
• Liang Xiaorui
• Zhang Juan
• Zhang Lei
• Zhang Wendong
• Xiong Jijun

Classifications

• H03H9/25

  Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)} · CPC title

• H03H9/02834

  of temperature influence (cut angles H03H9/02543) · CPC title

• H03H9/02574

  of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate · CPC title

• G01L11/04

  by acoustic means · CPC title

• G01L1/165

  with acoustic surface waves · CPC title