Micro-resonator design implementing internal resonance for MEMS applications

US12519442B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12519442-B2
Application numberUS-202318476861-A
CountryUS
Kind codeB2
Filing dateSep 28, 2023
Priority dateMar 14, 2019
Publication dateJan 6, 2026
Grant dateJan 6, 2026

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Frequency stabilization is provided in a microelectromechanical systems (MEMS) oscillator via tunable internal resonance (IR). A device comprises a MEMS resonator comprising a stepped-beam structure that is a thin-layer structure. The resonator may be configured to implement IR. The stepped-beam structure may be configured to provide flexibility to adjust modal frequencies into a n:m ratio, wherein n and m are integers. The thin-layer structure provides frequency tunability by controlling the mid-plane stretching effect with an applied DC bias. The thin-layer structure compensates for a frequency mismatch from a n:m ratio due to a fabrication error. The MEMS resonator may be an oscillator.

First claim

Opening claim text (preview).

What is claimed: 1 . A device comprising: a non-prismatic resonator configured to implement internal resonance (IR) to provide flexibility to adjust modal frequencies into a n:m ratio, wherein n and m are integers; and a plurality of electrodes configured to provide voltage to the resonator, wherein the non-prismatic resonator is a clamped-clamped silicon structure with varied dimensions, incorporating one or multiple steps or slopes. 2 . The device of claim 1 , wherein the resonator is one of a micromechanical resonator or a nanomechanical resonator. 3 . The device of claim 1 , wherein the resonator is a microelectromechanical systems (MEMS) resonator. 4 . The device of claim 3 , wherein the MEMS resonator is an oscillator. 5 . The device of claim 3 , wherein a mistuning between two flexural modes of the MEMS resonator can be precisely controlled by tuning a DC bias and, through strong coupling between the two flexural modes, a broader range of frequency stabilization is achieved by internal resonance (IR). 6 . The device of claim 1 , wherein the resonator comprises at least one of a stepped-beam structure that is a thin-layer structure, or a clamped-clamped beam structure. 7 . The device of claim 1 , wherein the resonator is configured to implement the IR to adjust the modal frequencies into a n:m ratio, wherein m and n are different integers, each equal or greater than one. 8 . The device of claim 1 , wherein the resonator is configured that when driven by a single-frequency actuation and conditions for IR are satisfied, two engaged modes are simultaneously resonated with their phases locked together through an intermodal energy transfer. 9 . The device of claim 1 , wherein through DC bias tuning strategy, a 1:2 commensurate relation is achieved between second and third flexural modes. 10 . The device of claim 1 , wherein the resonator comprises a non-prismatic beam. 11 . The device of claim 1 , wherein the stepped clamped-clamped silicon microbeam is fabricated by a MEMS fabrication flow to implement an IR mechanism. 12 . A system comprising: a micro resonator that incorporates a 1:2 ratio between second and third modal frequencies of the micro resonator, wherein the micro resonator comprises a structure with varied dimensions, incorporating one or multiple steps or slopes, configured to provide flexibility to adjust modal frequencies into a n:m ratio, wherein n and m are integers. 13 . The system of claim 12 , wherein the micro-resonator comprises silicon. 14 . The system of claim 12 , wherein the system is a geometrically nonlinear non-prismatic internal resonance (IR) system. 15 . The system of claim 13 , wherein the micro-resonator is configured to adjust the modal frequencies into a n:m ratio, wherein m and n are different integers, each greater than one.

Assignees

Inventors

Classifications

  • H03H9/2463Primary

    Clamped-clamped beam resonators · CPC title

  • by application of a DC-bias voltage (H03H9/02417 takes precedence) · CPC title

  • Vibration modes · CPC title

  • Driving or detection means · CPC title

  • H03H3/0077Primary

    by tuning of resonance frequency · CPC title

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What does patent US12519442B2 cover?
Frequency stabilization is provided in a microelectromechanical systems (MEMS) oscillator via tunable internal resonance (IR). A device comprises a MEMS resonator comprising a stepped-beam structure that is a thin-layer structure. The resonator may be configured to implement IR. The stepped-beam structure may be configured to provide flexibility to adjust modal frequencies into a n:m ratio, whe…
Who is the assignee on this patent?
Ohio State Innovation Foundation
What technology area does this patent fall under?
Primary CPC classification H03H9/2463. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 06 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).