Semiconductor photo-detecting device

Patent metadata

Field	Value
Publication number	US-12514027-B2
Application number	US-202418608216-A
Country	US
Kind code	B2
Filing date	Mar 18, 2024
Priority date	Jun 30, 2020
Publication date	Dec 30, 2025
Grant date	Dec 30, 2025

Abstract

A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, an insulating layer located on the second semiconductor layer, and an electrode structure located on the insulating layer. The second semiconductor layer includes a first region having a first conductivity-type and a second region having a second conductivity-type different from the first conductivity-type. The first region is surrounded by the second region, and includes a geometric center and an interface between the first region and the second region. The insulating layer covers the first region and the second region. The electrode structure includes an outer sidewall located on the second region. In a top view, the interface is located between the geometric center and the outer sidewall.

First claim

What is claimed is:

1 . A photo-detecting device, comprising:
a first semiconductor layer having a first conductivity-type; a second semiconductor layer located on the first semiconductor layer and comprising a first region having a second conductivity-type and a second region having the first conductivity-type, wherein the first region is surrounded by the second region and has a geometric center and a perimeter, and the first conductivity-type is different from the second conductivity-type; a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer; an insulating layer covering the first region and the second region; an electrode structure located on the insulating layer and comprising an outer sidewall located on the second region; wherein in a top view, the perimeter of the first region is located between the geometric center and the outer sidewall.

2 . The photo-detecting device of claim 1 , wherein the insulating layer comprises a first opening to expose the first region.

3 . The photo-detecting device of claim 2 , wherein the first opening has a width smaller than that of the first region.

4 . The photo-detecting device of claim 2 , wherein the electrode structure comprises a second opening corresponding to the first opening to expose the first region.

5 . The photo-detecting device of claim 4 , wherein the second opening has a width smaller than that of the first opening.

6 . The photo-detecting device of claim 1 , wherein the electrode structure comprises a first portion contacting the first region and a second portion contacting the insulating layer.

7 . The photo-detecting device of claim 6 , wherein the first portion has a width in a range of 1 μm to 50 μm.

8 . The photo-detecting device of claim 1 , wherein the electrode structure comprises an inner side wall located on the first region, and in the top view, the perimeter is located between the inner sidewall and the outer sidewall.

9 . The photo-detecting device of claim 1 , wherein the first region comprises a first dopant and a second dopant different from the first dopant, and the second region comprises the second dopant without the first dopant.

10 . The photo-detecting device of claim 9 , wherein the first dopant in the first region has a first concentration, and the second dopant in the first region has a second concentration smaller than the first concentration.

11 . The photo-detecting device of claim 9 , wherein the light-absorbing layer comprises a third region having the first dopant.

12 . The photo-detecting device of claim 11 , wherein the first region and the third region have a depth in a vertical direction, and the depth is in a range of 2 μm to 4 μm.

13 . The photo-detecting device of claim 11 , wherein the third region has a thickness in a range of 0.1 μm to 1 μm.

14 . The photo-detecting device of claim 1 , wherein the light-absorbing layer has a thickness in a range of 1 μm to 5 μm.

15 . The photo-detecting device of claim 1 , wherein the second semiconductor layer has a thickness smaller than that of the light-absorbing layer.

16 . The photo-detecting device of claim 1 , wherein the electrode structure comprises an electrode pad and an extension electrode extending from the electrode pad, in a horizontal direction the extension electrode a width in a range of 10 μm to 50 μm.

17 . The photo-detecting device of claim 16 , wherein in the top view, the extension electrode covers the first region, the second region and the perimeter.

18 . The photo-detecting device of claim 1 , further comprising an antireflection layer covering the first region and the insulating layer.

19 . A photo-detecting module, comprising:
a light-emitting device; the photo-detecting device of claim 1 ; and a carrier electrically connecting to the light-emitting device and the photo-detecting device.

20 . The photo-detecting device of claim 19 , wherein the carrier comprises a first trench and a second trench, and the light-emitting device and the photo-detecting device are disposed in the first trench and the second trench respectively.

Assignees

• Epistar Corp

Inventors

• Su Chu-Jih
• Chou Chia-Hsiang
• Peng Wei-Chih
• Liao Wen-Luh
• Huang Chao-Shun
• Lin Hsuan-Le
• Lee Shih-Chang
• Liu Mei Chun
• Ou Chen

Classifications

• H10W90/00

  Package configurations · CPC title

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10F77/206 Primary

  for devices having potential barriers · CPC title

• H10F55/18

  wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection · CPC title

• H10F30/21

  the devices being sensitive to infrared, visible or ultraviolet radiation · CPC title