Radio frequency amplifier

Patent metadata

Field	Value
Publication number	US-12512792-B2
Application number	US-202217929527-A
Country	US
Kind code	B2
Filing date	Sep 2, 2022
Priority date	Mar 23, 2021
Publication date	Dec 30, 2025
Grant date	Dec 30, 2025

Abstract

A radio frequency amplifier includes a first input terminal, a second input terminal, an output terminal, and first and second amplifiers. The first amplifier includes a first amplifier input coupled to the first input terminal, and a first amplifier output. The second amplifier includes a second amplifier input coupled to the second input terminal, and a second amplifier output coupled to the output terminal by an output inductive element. An output combiner circuit is coupled between the first amplifier output and the second amplifier output. The output combiner circuit includes a first inductive element, a capacitor, and a second inductive element. The first inductive element is coupled between the first amplifier output and a first terminal of the capacitor, and the second inductive element is coupled between the second amplifier output and the first terminal of the capacitor. A second terminal of the capacitor is coupled to ground.

First claim

The invention claimed is:

1 . A radio frequency amplifier comprising:
a first input terminal coupled to a first input lead in a semiconductor package; a second input terminal coupled to a second input lead in the semiconductor package and isolated from the first input terminal, wherein the first input lead is electrically isolated from the second input lead; an output terminal coupled to an output lead in the semiconductor package; a first amplifier including a first amplifier input coupled to the first input terminal, and a first amplifier output; a second amplifier including a second amplifier input coupled to the second input terminal, and a second amplifier output coupled to the output terminal by an output inductive element, wherein the first amplifier input is electrically isolated from the second amplifier input; and an output combiner circuit coupled between the first amplifier output and the second amplifier output, wherein the output combiner circuit comprises a first inductive element, a capacitor and a second inductive element, wherein the first inductive element is coupled between the first amplifier output and a first terminal of the capacitor, the second inductive element is coupled between the second amplifier output and the first terminal of the capacitor, and a second terminal of the capacitor is coupled to ground.

2 . The radio frequency amplifier of claim 1 , wherein the output combiner circuit provides a phase shift other than 90 degree to signals amplified by the first amplifier so that the signals amplified by the first amplifier and the second amplifier combine in phase at the second amplifier output.

3 . A radio frequency amplifier comprising:
a semiconductor package including an output lead, a first input lead, a second input lead that is electrically isolated from the first input lead, the semiconductor package encasing:
a first amplifier comprising a first transistor, wherein the first transistor includes a first transistor input coupled to the first input lead, and a first transistor output;
a second amplifier comprising a second transistor, wherein the second transistor includes a second transistor input coupled to the second input lead, and a second transistor output coupled to the output lead, wherein the second transistor input is electrically isolated from the first transistor input; and
a first inductive element and a second inductive element, wherein the first inductive element is coupled between the first transistor output and a first terminal of a capacitor, and the second inductive element is coupled between the second transistor output and the first terminal of the capacitor, wherein a second terminal of the capacitor is coupled to ground.

4 . The radio frequency amplifier of claim 3 , wherein the semiconductor package further comprises an integrated passive device (IPD) in the semiconductor package, wherein the capacitor is formed with the IPD.

5 . The radio frequency amplifier of claim 3 , wherein the capacitor is a surface mount capacitor outside of the semiconductor package.

6 . A radio frequency amplifier comprising:
a semiconductor package including an output lead, a first input lead, a second input lead, the semiconductor package encasing:
a first amplifier comprising a first transistor, wherein the first transistor includes a first transistor input coupled to the first input lead, and a first transistor output;
a second amplifier comprising a second transistor, wherein the first transistor includes a second transistor input coupled to the second input lead, and a second transistor output coupled to the output lead;
a first inductive element and a second inductive element, wherein the first inductive element is coupled between the first transistor output and a first terminal of a capacitor, and the second inductive element is coupled between the second transistor output and the first terminal of the capacitor, wherein a second terminal of the capacitor is coupled to ground; and
a first microstrip line outside of the semiconductor package and coupled between the first inductive element and the second inductive element, wherein the first microstrip line is coupled to the capacitor, and wherein the capacitor is a surface mount capacitor outside of the semiconductor package.

7 . The radio frequency amplifier of claim 6 , further comprising a shunt microstrip line outside of the semiconductor package coupled between the first microstrip line and the capacitor.

8 . The radio frequency amplifier of claim 3 , wherein the first inductive element, the second inductive element and the capacitor together provide a 90-degree phase shift to signals amplified by the first amplifier so that signals amplified by the first amplifier and the second amplifier combine in phase at the second transistor output.

9 . The radio frequency amplifier of claim 3 , wherein the first inductive element, the second inductive element and the capacitor together provide a phase shift other than 90 degree to signals amplified by the first amplifier so that the signals amplified by the first amplifier and the second amplifier combine in phase at the second transistor output.

10 . A packaged amplifier device comprising:
a first input lead and a second input lead that is electrically isolated from the first input lead coupled to a package; an output lead coupled to the package; a first amplifier with a first transistor, wherein the first transistor includes a first transistor input coupled to the first input lead, and a first transistor output; a second amplifier with a second transistor, wherein the second transistor includes a second transistor input coupled to the second input lead, and a second transistor output coupled to the output lead, wherein the second transistor input is electrically isolated from the first transistor input; and a first inductive element and a second inductive element, wherein the first inductive element is coupled between the first transistor output and a first terminal of a capacitor, the second inductive element is coupled between the second transistor output and the first terminal of the capacitor, and a second terminal of the capacitor is coupled to ground.

11 . The radio frequency amplifier of claim 1 , wherein the first inductive element comprises a set of bond wires coupled between the first amplifier output and the first terminal of the capacitor, and the second inductive element comprised another set of bond wires coupled between the second amplifier output and the first terminal of the capacitor.

12 . The radio frequency amplifier of claim 1 , further comprising an additional set of bond wires, wherein the additional set of bond wires is coupled between the second amplifier output and the output terminal of the radio frequency amplifier.

13 . The radio frequency amplifier of claim 1 , wherein the first amplifier comprises a first input impedance matching network and a first power transistor, wherein the first input impedance matching network is configured to match an impedance between the first amplifier input and the first power transistor; and the second amplifier comprises a second input impedance matching network and a second power transistor, wherein the second input impedance matching network is configured to match the impedance between second amplifier input and the second power transistor.

14 . The radio frequency amplifier of claim 13 , wherein the first power transistor is a field effect transistor with a gate terminal coupled to the first input impedance matching network, a drain terminal coupled to the first inductive element and a source te

Assignees

• Nxp Usa Inc

Inventors

• Hua Qi
• Wu Qi
• Liu Tonghe
• Li Wenming
• Wang Changyang

Classifications

• H10W44/20 Primary

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W90/759

  between a chip and a laterally-adjacent discrete passive device · CPC title

• H10W44/234

  Arrangements for impedance matching · CPC title

• H10W44/216

  Waveguides, e.g. strip lines · CPC title