Method and system for measuring carrier-to-envelope phase fluctuations of a femtosecond laser pulse

US12512644B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12512644-B2
Application numberUS-202017783451-A
CountryUS
Kind codeB2
Filing dateDec 9, 2020
Priority dateDec 9, 2019
Publication dateDec 30, 2025
Grant dateDec 30, 2025

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method and a system for measuring carrier-to-envelope phase fluctuations (CEP) fluctuations of a laser field, the method comprising focusing laser pulses in a solid-state material for high harmonic generation, collecting a resulting high harmonic spectrum, and inferring a relative phase of the driving field from the high harmonic spectrum. The system comprises a source of CEP stable mid-infrared laser pulses; a CEP variation unit; a solid state medium; a detector; and first focusing optics focusing pulses generated by the source into the solid state medium and second focusing optics collecting resulting harmonics generated in the solid state medium into the detector.

First claim

Opening claim text (preview).

The invention claimed is: 1 . A method for measuring carrier-to-envelope phase (CEP) fluctuations of a laser field, comprising focusing laser pulses in a solid-state material for high harmonic generation, collecting a resulting high harmonic spectrum, and inferring a relative phase of the driving field from the high harmonic spectrum, the method comprising recording reference high harmonic generation intensity profiles as a function of the CEP of the laser field; recording a high harmonic generation spectrum at fixed CEP in single shot; comparing each single shot intensity profile to the reference profiles as a function of the CEP; determining a difference between the single shot profile and the reference profiles; selecting a profile yielding a lowest difference as determining the CEP fluctuations per shot. 2 . The method of claim 1 , wherein a laser field intensity is at least 10 11 W/cm 2 and high harmonics between the 3rd and 100th harmonic order of the fundamental laser field are generated. 3 . The method of claim 1 , wherein the laser field oscillates with 1 to 20 periods at full width half maximum (FWHM) of the peak amplitude and has a central wavelength between 2 and 300 microns; and the high harmonics are generated between the 3rd and 100th harmonic order of the laser field. 4 . The method of claim 1 , comprising recording the reference high harmonic generation intensity profiles averaged over 1 to 10 6 samples for each CEP, as a function of the CEP of the laser field, the CEP being sampled by incremental values between π/2 and π/10 4 . 5 . The method of claim 1 , comprising comparing each single shot intensity profile to the reference profiles as a function of the CEP with a numerical fitting method. 6 . The method of claim 1 , comprising comparing each single shot intensity profile to the reference profiles as a function of the CEP with a numerical fitting method and determining the relative phase by finding the reference profile that provides a best fit with the single-shot profile. 7 . The method of claim 1 , comprising measuring the relative phase of consecutive or non-consecutive pulses. 8 . The method of claim 1 , comprising comprising repeating over a number of single shot samples between 2 and 10 12 . 9 . The method of claim 1 , comprising generating high harmonics from the laser field interaction with the solid state material of a thickness in a range between 0.1 nm and 1 mm, wherein the laser field intensity is at least 10 11 W/cm 2 . 10 . The method of claim 1 , comprising generating high harmonics from the laser field interaction with one of mono crystals, poly crystals, polymorphic materials, and thin films. 11 . The method of claim 1 , comprising generating high harmonics having a spectral distribution changing with the laser field CEP. 12 . The method of claim 1 , comprising generating cep stable laser field by one of frequency domain optical parametric amplification, optical parametric amplification and optical parametric chirped-pulse amplification. 13 . The method of claim 1 , comprising routing the pulses to an absolute CEP measurement system to obtain an absolute reference for measured phase variations. 14 . The method of claim 1 , comprising measuring absolute CEP of the laser field in parallel with acquisition of the high harmonic spectra.

Assignees

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Classifications

  • Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping (shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B) · CPC title

  • Monitoring arrangements not otherwise provided for (photometry G01J1/00, e.g. G01J1/4257; radiation pyrometry G01J5/00; measuring coherence of light G01J9/00; measuring wavelength of light G01J9/00, e.g. G01J9/0246; measuring optical pulses G01J11/00; calorimetrically measuring power of laser beams G01K17/003) · CPC title

  • Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity (nonlinear frequency conversion per se G02F1/35) · CPC title

  • Temporal shaping, e.g. pulse compression, frequency chirping (soliton generation and propagation G02F1/3513, H01S3/063 and H01S3/108) · CPC title

  • Measuring the characteristics of individual optical pulses or of optical pulse trains · CPC title

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What does patent US12512644B2 cover?
A method and a system for measuring carrier-to-envelope phase fluctuations (CEP) fluctuations of a laser field, the method comprising focusing laser pulses in a solid-state material for high harmonic generation, collecting a resulting high harmonic spectrum, and inferring a relative phase of the driving field from the high harmonic spectrum. The system comprises a source of CEP stable mid-infra…
Who is the assignee on this patent?
Inst Nat Rech Scient, Centre Nat Rech Scient, Centre Nat Rech Scient
What technology area does this patent fall under?
Primary CPC classification H01S3/1307. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 30 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).