Display device

Patent metadata

Field	Value
Publication number	US-12507537-B2
Application number	US-202117500446-A
Country	US
Kind code	B2
Filing date	Oct 13, 2021
Priority date	Oct 23, 2020
Publication date	Dec 23, 2025
Grant date	Dec 23, 2025

Abstract

A display device including a display area, a peripheral area adjacent to the display area, light-emitting diodes disposed in the display area, transistors electrically connected to the light-emitting diodes, and a pad section including a pad electrode having a multi-layered structure, the pad electrode being disposed in the peripheral area. The pad electrode includes a main metal layer, a first conductive layer on an upper surface of the main metal layer, the first conductive layer including a conductive oxide, and an auxiliary layer on a lower surface of the main metal layer.

First claim

What is claimed is:

1 . A display device comprising:
a display area; a peripheral area disposed adjacent to the display area; light-emitting diodes disposed in the display area; transistors electrically connected to the light-emitting diodes; and a pad section including a pad electrode having a multi-layered structure, the pad electrode being disposed in the peripheral area, wherein the pad electrode includes:
a main metal layer comprising a first metal element;
a first conductive layer on an upper surface of the main metal layer, the first conductive layer including zinc indium tin oxide (ZITO);
a first oxide metal layer between the main metal layer and the first conductive layer, wherein the first oxide metal layer comprises a first metal oxide including the first metal element and an oxygen atom, wherein a thickness of the first oxide metal layer is less than a thickness of the main metal layer; and
an auxiliary layer on a lower surface of the main metal layer.

2 . The display device of claim 1 , wherein the zinc indium tin oxide (ZITO) is amorphous, and
a tin content of the zinc indium tin oxide is about 5 at % to about 25 at % with respect to a content of zinc and indium.

3 . The display device of claim 1 , wherein the first conductive layer further includes at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), and aluminum zinc oxide (AZO).

4 . The display device of claim 1 , further comprising:
a second conductive layer disposed between the main metal layer and the first conductive layer, wherein the second conductive layer includes a second metal element, and the second metal element is different from the first metal element of the main metal layer.

5 . The display device of claim 4 , further comprising:
a second oxide metal layer between the second conductive layer and the first conductive layer, wherein the second oxide metal layer includes a second metal oxide, and the second oxide metal layer includes the second metal element of the second conductive layer and an oxygen atom.

6 . The display device of claim 1 , wherein the auxiliary layer includes a metal layer or a transparent conductive oxide layer.

7 . The display device of claim 1 , further comprising:
a wiring in the peripheral area; a first insulating layer disposed between the wiring and the pad electrode, the first insulating layer including a contact hole for electrical connection between the wiring and the pad electrode; and a second insulating layer overlapping a connection region of the wiring and the pad electrode, the second insulating layer including a hole overlapping the pad electrode.

8 . The display device of claim 7 , wherein
the pad electrode includes:
an outer portion overlapping the second insulating layer; and
an inner portion overlapping the hole of the second insulating layer, and a thickness of the outer portion is greater than a thickness of the inner portion.

9 . The display device of claim 7 , wherein the second insulating layer includes an inorganic insulating material.

10 . The display device of claim 1 , wherein
each of the transistors include:
a semiconductor layer including a channel region, a source region, and a drain region, the source region and the drain region being respectively disposed on two opposite sides of the channel region;
a lower electrode disposed below the semiconductor layer;
a gate electrode disposed over the semiconductor layer, the gate electrode overlapping the channel region; and
an electrode electrically connected to the source region or the drain region, and
the pad electrode is disposed in a same layer as the lower electrode, the gate electrode, or the electrode.

11 . The display device of claim 1 , further comprising:
an organic insulating layer on the pad electrode and having a hole overlapping the pad electrode, wherein a thickness of a first portion of the first conductive layer that is overlapped by the organic insulating layer is greater than a thickness of a second portion of the first conductive layer that is overlapped by the hole of the organic insulating layer.

12 . The display device of claim 1 , wherein the first metal element comprises copper (Cu), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chrome (Cr), lithium (Li), calcium (Ca), or molybdenum (Mo).

13 . The display device of claim 4 , wherein the second conductive layer includes at least one of titanium, molybdenum, and tungsten.

14 . The display device of claim 1 , wherein the auxiliary layer includes a metal layer.

15 . The display device of claim 1 , wherein the first oxide metal layer is in direct contact with the upper surface of the main metal layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Yang Shinhyuk
• Kang Donghan
• Kim Jeehoon
• Lee Junki
• Huh Jongmoo

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6713

  characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes · CPC title

• H10K59/131 Primary

  Interconnections, e.g. wiring lines or terminals · CPC title

• H10D30/674

  characterised by the active materials · CPC title