Finfet resistive switching device having interstitial charged particles for memory and computational applications
US-2020365737-A1 · Nov 19, 2020 · US
US12505337B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12505337-B2 |
| Application number | US-202017782054-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 11, 2020 |
| Priority date | Dec 2, 2019 |
| Publication date | Dec 23, 2025 |
| Grant date | Dec 23, 2025 |
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The present invention is in the field of a device comprising an adaptable and addressable neuromorphic structure, a method of operating said neuromorphic structure, a method of acquiring a distribution of states of said neuromorphic structure, and a method of adapting a micro-electronic or nano-electronic device comprising said neuromorphic structure.
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The invention claimed is: 1 . A device comprising at least one adaptable and addressable neuromorphic structure electromagnetically and anisotropic configured to comprise at least one: atomic surface with an electrical conductivity σ of <10 S/m, on or in the atomic surface at least n electromagnetically adaptable and addressable first atoms, wherein n≥2, wherein each individual first atom has at least two addressable and adaptable first atom states, wherein the states are selected from ionic states, semi-ionic states, magnetic states, quantum states, optical states, and combinations thereof, wherein the first atoms are selected from the periodic table such that the first atom states are addressable and adaptable in a first time scale <10 sec, and at least m electromagnetically addressable and adaptable second atoms, wherein m≥2, wherein each individual second atom has at least two addressable and adaptable second atom states, wherein the states are selected from ionic states, semi-ionic states, magnetic states, quantum states, optical states, and combinations thereof, and wherein the second atoms are selected from the periodic table such that through the second atom states the atom states of first atoms are addressable and adaptable through states of second atoms in a second time scale >100 times the first time scale, wherein first atoms and second atoms are placed to be electro-magnetically coupled with one and another resulting in the neuromorphic structure exhibiting at least 2 (n+m) coupled states, wherein electromagnetic properties in a first direction are different from electromagnetic properties in a second direction, at least one input part adapted for providing a stimulus to the neuromorphic structure for adapting at least one state of at least one second atom, wherein the input part is adapted to receive said stimulus in the form of one of an electro-magnetic pulse, an optical pulse, and an acoustic pulse, and provide said stimulus to the neuromorphic structure, thereby adapting a distribution of states of the neuromorphic structure from a first to a second distribution of states, and at least one output part adapted for establishing the first or second distribution of states of the neuromorphic structure. 2 . The device comprising a neuromorphic structure according to claim 1 , wherein the atomic surface is anisotropic. 3 . The device comprising a neuromorphic structure according to claim 1 , wherein the atomic surface comprises third atoms, wherein first and second atoms are each individually different from third atoms and are selected from Groups of elements different from the Group of third atoms. 4 . The device comprising a neuromorphic structure according to claim 1 , wherein the atoms in the atomic surface comprises atoms of at least one element selected from Group IIIa elements, Group IVa elements, and Group Va elements, and wherein the atomic surface is selected from two-dimensional crystals providing interlayer van der Waals interactions in a direction perpendicular to the layer surface, wherein two-dimensional crystals are selected from graphene, hexagonal-BN, black phosphorus, transition metal dichalcogenides, and wherein the atomic surface comprises two or more layers, and wherein the atomic surface is selected from a crystalline surface, and a semi-crystalline surface, and wherein atoms in the atomic surface are in plane. 5 . The device comprising a neuromorphic structure according to claim 1 , wherein n≥2, and wherein m≥2, and wherein first atoms are provided in at least one row, and wherein second atoms are provided in at least one adjacent row, and wherein rows of first atoms interchange rows of second atoms, and wherein coupling between first atoms is >4 meV, and wherein coupling between second atoms is <3 meV, and wherein coupling between a first atom and a second atom is <10 meV. 6 . The device comprising a neuromorphic structure according to claim 1 , wherein the at least one input part for adapting at least one state of at least one second atom is selected from an input part for receiving the stimulus, a gate for ionizing second atoms, an electro-magnetic switch, a transistor, a diode, and an optical input part, and wherein at least one output part adapted for establishing the first or second distribution of states of the neuromorphic structure is selected from output parts adapted to receive an electro-magnetic signal. 7 . The device comprising a neuromorphic structure according to claim 1 , wherein the first time scale is <10 2 sec, and wherein the second time scale is >10 2 sec, and wherein the second time scale is >10 3 *the first time scale, and wherein the surface has an electrical conductivity σ of 10 −6 -5*10 −3 S/m (@ 20° C.). 8 . A method of operating a device comprising a neuromorphic structure in a device comprising at least one adaptable and addressable neuromorphic structure electromagnetically and anisotropic configured to comprise at least one: atomic surface with an electrical conductivity σ of <10 S/m, on or in the atomic surface at least n electromagnetically adaptable and addressable first atoms, wherein n≥2, wherein each individual first atom has at least two addressable and adaptable first atom states, wherein the states are selected from ionic states, semi-ionic states, magnetic states, quantum states, optical states, and combinations thereof, wherein the first atoms are selected from the periodic table such that the first atom states are addressable and adaptable in a first time scale <10 sec, and at least m electromagnetically addressable and adaptable second atoms, wherein m≥2, wherein each individual second atom has at least two addressable and adaptable second atom states, wherein the states are selected from ionic states, semi-ionic states, magnetic states, quantum states, optical states, and combinations thereof, and wherein the second atoms are selected from the periodic table such that through the second atom states the atom states of first atoms are addressable and adaptable through states of second atoms in a second time scale >100 times the first time scale, wherein first atoms and second atoms are placed to be electro-magnetically coupled with one and another resulting exhibiting at least 2 (n+m) coupled states, wherein electromagnetic properties in a first direction are different from electromagnetic properties in a second direction, at least one input part adapted for providing a stimulus to the neuromorphic structure for adapting at least one state of at least one second atom, wherein the input part is adapted to receive said stimulus in the form of one of an electro-magnetic pulse, an optical pulse, and an acoustic pulse, and provide said stimulus to the neuromorphic structure, thereby adapting a distribution of states of the neuromorphic structure from a first to a second distribution of states, and at least one output part adapted for establishing the first or second distribution of states of the neuromorphic structure, the method comprising adapting at least one state of at least one second atom by providing a stimulus to the device, selecting the stimulus from an electro-magnetic pulse, an optical pulse, and an acoustic pulse, changing the at least one state of the at least one second atom in the second time scale thereby, the change of state adapting the coupling of states in the first time scale, and adapting the distribution of states from a first to a second distribution of states thereby. 9 . A method of acquiring a distribution of states of a neuromorphic structure in a device comprising at least one adaptable and addressable neuromorphic structure electromagnetically and anisotropic co
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