Methods for manufacturing a semiconductor wafer using a preheat ring in a wafer reactor

Patent metadata

Field	Value
Publication number	US-12503792-B2
Application number	US-202318299268-A
Country	US
Kind code	B2
Filing date	Apr 12, 2023
Priority date	Dec 31, 2020
Publication date	Dec 23, 2025
Grant date	Dec 23, 2025

Abstract

A method of manufacturing a semiconductor wafer in a reaction apparatus comprising channeling a process gas into a reaction chamber through the process gas inlet and heating the process gas with the preheat ring having an edge bar. The method also includes adjusting at least one of a velocity and a direction of the process gas with the edge bar, and depositing a layer on the semiconductor wafer with the process gas, wherein the edge bar facilitates forming a uniform thickness of the layer on the semiconductor wafer.

First claim

What is claimed is:

1 . A method of manufacturing a semiconductor wafer in a reaction apparatus, the reaction apparatus including an upper dome and a lower dome defining a reaction chamber and an upper liner and a lower liner defining a process gas inlet, the reaction apparatus further including a preheat ring positioned within the reaction chamber for heating a process gas prior to contacting the semiconductor wafer, the preheat ring attached to an inner circumference of the lower liner, the preheat ring including an annular disk and an edge bar positioned on the annular disk, the method comprising:
channeling the process gas into the reaction chamber through the process gas inlet; heating the process gas with the preheat ring; adjusting at least one of a velocity and a direction of the process gas with the edge bar; and depositing a layer on the semiconductor wafer with the process gas, wherein the edge bar facilitates forming a uniform thickness of the layer on the semiconductor wafer.

2 . The method of claim 1 , wherein the step of depositing is performed by epitaxial chemical vapor deposition, and wherein the edge bar has an edge bar circumferential length facilitating the adjusting step and the uniform thickness of the layer.

3 . The method of claim 1 , further comprising rotating the semiconductor wafer with respect to the reaction apparatus.

4 . The method of claim 1 , wherein the step of adjusting includes adjusting only the velocity of the process gas within the reaction chamber using the edge bar.

5 . The method of claim 1 , wherein the step of adjusting includes adjusting only the direction of the process gas within the reaction chamber using the edge bar.

6 . The method of claim 1 , wherein the preheat ring includes two edge bars, and the step of adjusting includes changing the direction of the process gas using the two edge bars.

7 . The method of claim 6 , wherein the two edge bars are positioned immediately downstream of a first inlet segment and a fourth inlet segment of the process gas inlet, and the method including increasing the velocity of the process gas.

8 . The method of claim 7 , wherein the step of adjusting includes increasing a flow rate of the process gas by adjusting a height of the two edge bars.

9 . The method of claim 6 , wherein the step of adjusting includes changing the direction of the process gas directed toward an edge of the semiconductor wafer to facilitate forming a uniform thickness of the layer.

10 . A method of manufacturing a semiconductor wafer in an epitaxial chemical vapor deposition reactor, the reactor including a process gas inlet, a preheat ring positioned to heat an epitaxial process gas prior to deposition on the semiconductor wafer, the preheat ring connected to an inner circumference of a lower liner, the preheat ring including an annular disk and at least one edge bar on the annular disk, the method comprising:
channeling the epitaxial process gas into the reactor through the process gas inlet; heating the epitaxial process gas with the preheat ring; adjusting a velocity and a direction of the epitaxial process gas with a circumferential length of the at least one edge bar; and depositing an epitaxial layer on the semiconductor wafer with the epitaxial process gas, wherein the at least one edge bar facilitates forming a uniform thickness of the epitaxial layer on the semiconductor wafer.

11 . The method of claim 10 , wherein the adjusting step includes increasing a flow rate of the epitaxial process gas using a height of the at least one edge bar.

12 . The method of claim 10 , wherein the process gas inlet is separated into first, second, third and fourth inlet segments, the channeling step including positioning each inlet segment to channel the epitaxial process gas to a different portion of the semiconductor wafer.

13 . The method of claim 10 , wherein the preheat ring includes the annular disk having an inner edge, an outer edge, a first side, and a second side opposite the first side, the inner edge and the outer edge defining a radial distance therebetween; and a first edge bar of the at least one edge bar is positioned on the first side and extends from the outer edge toward the inner edge an edge bar radial thickness, wherein the radial distance is greater than the edge bar radial thickness, and wherein the adjusting step includes adjusting the first edge bar to facilitate forming a uniform thickness of the epitaxial layer on the semiconductor wafer.

14 . A method of manufacturing a semiconductor wafer in a reaction apparatus, the reaction apparatus including an upper dome and a lower dome defining a reaction chamber and an upper liner and a lower liner defining a process gas inlet, the reaction apparatus further including a preheat ring positioned within the reaction chamber for heating a process gas prior to contacting the semiconductor wafer, the preheat ring attached to an inner circumference of the lower liner, the preheat ring including an annular disk and a first edge bar and a second edge bar positioned on the annular disk, the method comprising:
channeling the process gas into the reaction chamber through the process gas inlet; heating the process gas with the preheat ring; and using the first and second edge bars to deposit a uniform thickness layer on the semiconductor wafer with the process gas.

15 . The method of claim 14 , including adjusting a height of the first edge bar and a height of the second edge bar to adjust an amount of epitaxial material directed to the semiconductor wafer.

16 . The method of claim 15 , including adjusting a circumferential length of the first edge bar to adjust an amount of epitaxial material directed to the semiconductor wafer.

17 . The method of claim 16 , wherein the first and second edge bars are positioned immediately downstream of a first inlet segment and a fourth inlet segment of the process gas inlet, each edge bar having a circumferential length, and the method including increasing a velocity of the process gas.

18 . The method of claim 17 , wherein the adjusting step includes increasing a flow rate of the process gas.

19 . The method of claim 17 , wherein the adjusting step includes changing the direction of the process gas directed toward an edge of the semiconductor wafer to facilitate forming a uniform thickness of the layer.

Assignees

• Globalwafers Co Ltd

Inventors

• Hu Chieh
• Tu Chun-Chin

Classifications

• C23C16/45563

  Gas nozzles · CPC title

• C23C16/45591

  Fixed means, e.g. wings, baffles · CPC title

• C23C16/4585

  Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds · CPC title

• C30B25/12

  Substrate holders or susceptors · CPC title

• C30B25/10

  Heating of the reaction chamber or the substrate · CPC title