Dielectric material comprising bismuth compound and method of making the same

Patent metadata

Field	Value
Publication number	US-12502662-B2
Application number	US-202217589953-A
Country	US
Kind code	B2
Filing date	Feb 1, 2022
Priority date	Dec 1, 2021
Publication date	Dec 23, 2025
Grant date	Dec 23, 2025

Abstract

An electrode assembly includes a first electrode and a dielectric layer on the first electrode. The dielectric layer includes a bismuth compound of the formula Bi 2 (CrO 4 ) 2 Cr 2 O 7 , Pb 4 (BiO 4 )(PO 4 ), Ag 3 BiO 3 , Bi 2 CdO 2 (GeO 4 ), Bi 2 Te 4 O 11 , Cs 6 Bi 4 O 9 , Na 3 Bi(PO 4 ) 2 , Bi 2 (SeO 3 ) 3 , or a combination thereof. The electrode assembly can be particularly useful in various electronic devices.

First claim

What is claimed is:

1 . An electrode assembly comprising:
a first electrode; and a dielectric layer on the first electrode, the dielectric layer comprising a bismuth compound of the formula Bi 2 (CrO 4 ) 2 Cr 2 O 7 , Pb 4 (BiO 4 )(PO 4 ), Ag 3 BiO 3 , Bi 2 CdO 2 (GeO 4 ), Bi 2 Te 4 O 11 , Cs 6 Bi 4 O 9 , Na 3 Bi(PO 4 ) 2 , Bi 2 (SeO 3 ) 3 , or a combination thereof.

2 . The electrode assembly of claim 1 , wherein the bismuth compound has a band gap of greater than 1 eV.

3 . The electrode assembly of claim 1 , wherein the bismuth compound has a permittivity of greater than 100.

4 . The electrode assembly of claim 1 , wherein the bismuth compound is Bi 2 (CrO 4 ) 2 Cr 2 O 7 .

5 . The electrode assembly of claim 1 , wherein the bismuth compound is Pb 4 (BiO 4 )(PO 4 ).

6 . The electrode assembly of claim 1 , wherein the bismuth compound is Ag 3 BiO 3 .

7 . The electrode assembly of claim 1 , wherein the bismuth compound is Bi 2 CdO 2 (GeO 4 ).

8 . The electrode assembly of claim 1 , wherein the bismuth compound is Bi 2 Te 4 O 11 .

9 . The electrode assembly of claim 1 , wherein the bismuth compound is Cs 6 Bi 4 O 9 .

10 . The electrode assembly of claim 1 , wherein the bismuth compound is Na 3 Bi(PO 4 ) 2 .

11 . The electrode assembly of claim 1 , wherein the bismuth compound is Bi 2 (SeO 3 ) 3 .

12 . An electronic device comprising the electrode assembly of claim 1 , and a second electrode opposite the first electrode.

13 . A capacitor comprising:
a first electrode, a second electrode, and a dielectric layer disposed between the first and second electrodes, wherein the dielectric layer comprises a bismuth compound of the formula Bi 2 (CrO 4 ) 2 Cr 2 O 7 , Pb 4 (BiO 4 )(PO 4 ), Ag 3 BiO 3 , Bi 2 CdO 2 (GeO 4 ), Bi 2 Te 4 O 11 , Cs 6 Bi 4 O 9 , Na 3 Bi(PO 4 ) 2 , Bi 2 (SeO 3 ) 3 , or a combination thereof.

14 . The capacitor of claim 13 , wherein the capacitor is a multilayer capacitor.

15 . A method of manufacturing an electrode assembly, the method comprising:
providing a bismuth compound of the formula Bi 2 (CrO 4 ) 2 Cr 2 O 7 , Pb 4 (BiO 4 )(PO 4 ), Ag 3 BiO 3 , Bi 2 CdO 2 (GeO 4 ), Bi 2 Te 4 O 11 , Cs 6 Bi 4 O 9 , Na 3 Bi(PO 4 ) 2 , Bi 2 (SeO 3 ) 3 , or a combination thereof; providing a first electrode; disposing a dielectric layer comprising the bismuth compound on the first electrode; and disposing a second electrode on the dielectric layer opposite the first electrode.

16 . A photocatalytic device comprising:
a substrate; and a photocatalytic layer on the substrate, the photocatalytic layer comprising a bismuth compound of the formula Bi 2 (CrO 4 ) 2 Cr 2 O 7 , Pb 4 (BiO 4 )(PO 4 ), Ag 3 BiO 3 , Bi 2 CdO 2 (GeO 4 ), Bi 2 Te 4 O 11 , Cs 6 Bi 4 O 9 , Na 3 Bi(PO 4 ) 2 , Bi 2 (SeO 3 ) 3 , or a combination thereof.

17 . A method of decomposing an organic compound, the method comprising: exposing an organic material comprising the organic compound to the photocatalytic device of claim 16 under conditions effective to decompose the organic compound.

18 . A transistor comprising:
a gate electrode; and a gate dielectric layer on the gate electrode, the gate dielectric layer comprising a bismuth compound of the formula Bi 2 (CrO 4 ) 2 Cr 2 O 7 , Pb 4 (BiO 4 )(PO 4 ), Ag 3 BiO 3 , Bi 2 CdO 2 (GeO 4 ), Bi 2 Te 4 O 11 , Cs 6 Bi 4 O 9 , Na 3 Bi(PO 4 ) 2 , Bi 2 (SeO 3 ) 3 , or a combination thereof.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lacivita Valentina
• Wang Yan
• Cho Jeong-Ju

Classifications

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title

• H01G4/30

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• B01J27/0573

  Selenium; Compounds thereof · CPC title

• B01J27/186

  with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium · CPC title

• B01J23/31

  combined with bismuth · CPC title