Display substrate and preparation method thereof, and display apparatus

Patent metadata

Field	Value
Publication number	US-12501786-B2
Application number	US-202117908224-A
Country	US
Kind code	B2
Filing date	Nov 4, 2021
Priority date	Mar 23, 2021
Publication date	Dec 16, 2025
Grant date	Dec 16, 2025

Abstract

The present disclosure provides a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a circuit layer disposed on a base substrate, an emitting structure layer and a photoelectric structure layer disposed on a side of the circuit layer away from the base substrate, the circuit layer includes at least one impurity absorption layer and at least one transistor, the transistor includes an active layer, and at least one insulation layer is provided between the impurity absorption layer and the active layer; an atomic ratio of a silicon element to a nitrogen element in the impurity absorption layer is 1:5 to 1:35.

First claim

The invention claimed is:

1 . A display substrate, comprising a circuit layer disposed on a base substrate and an emitting structure layer and a photoelectric structure layer disposed on a side of the circuit layer away from the base substrate, wherein the circuit layer comprises an impurity absorption layer and a plurality of transistors, each transistor comprises an active layer, and a first insulation layer is provided between the impurity absorption layer and the active layer; and an atomic ratio of a silicon element to a nitrogen element in the impurity absorption layer is 1:5 to 1:35.

2 . The display substrate according to claim 1 , wherein the atomic ratio of the silicon element to the nitrogen element in the impurity absorption layer is 1:10 to 1:25.

3 . The display substrate according to claim 2 , wherein the display substrate comprises a light emitting region and a sensing region; the circuit layer comprises a drive circuit layer disposed in the light emitting region and a sensing circuit layer disposed in the sensing region, the drive circuit layer comprises a first transistor, the sensing circuit layer comprises a second transistor, the emitting structure layer is disposed on a side of the drive circuit layer away from the base substrate, and the photoelectric structure layer is disposed on a side of the sensing circuit layer away from the base substrate; the emitting structure layer comprises an anode, an organic emitting layer, and a cathode; the photoelectric structure layer comprises a photodiode and an electrode lead; and the anode is arranged in a same layer as the electrode lead.

4 . The display substrate according to claim 1 , wherein an atomic ratio of the silicon element to a hydrogen element in the impurity absorption layer is 1:5 to 1:30.

5 . The display substrate according to claim 4 , wherein the display substrate comprises a light emitting region and a sensing region; the circuit layer comprises a drive circuit layer disposed in the light emitting region and a sensing circuit layer disposed in the sensing region, the drive circuit layer comprises a first transistor, the sensing circuit layer comprises a second transistor, the emitting structure layer is disposed on a side of the drive circuit layer away from the base substrate, and the photoelectric structure layer is disposed on a side of the sensing circuit layer away from the base substrate; the emitting structure layer comprises an anode, an organic emitting layer, and a cathode; the photoelectric structure layer comprises a photodiode and an electrode lead; and the anode is arranged in a same layer as the electrode lead.

6 . The display substrate according to claim 4 , wherein the atomic ratio of the silicon element to the hydrogen element in the impurity absorption layer is 1:5 to 1:15.

7 . The display substrate according to claim 6 , wherein the display substrate comprises a light emitting region and a sensing region; the circuit layer comprises a drive circuit layer disposed in the light emitting region and a sensing circuit layer disposed in the sensing region, the drive circuit layer comprises a first transistor, the sensing circuit layer comprises a second transistor, the emitting structure layer is disposed on a side of the drive circuit layer away from the base substrate, and the photoelectric structure layer is disposed on a side of the sensing circuit layer away from the base substrate; the emitting structure layer comprises an anode, an organic emitting layer, and a cathode; the photoelectric structure layer comprises a photodiode and an electrode lead; and the anode is arranged in a same layer as the electrode lead.

8 . The display substrate according to claim 1 , wherein a material of the impurity absorption layer comprises any one or more of following: silicon nitride, silicon oxynitride, and silicon aluminum nitride.

9 . The display substrate according to claim 8 , wherein the display substrate comprises a light emitting region and a sensing region; the circuit layer comprises a drive circuit layer disposed in the light emitting region and a sensing circuit layer disposed in the sensing region, the drive circuit layer comprises a first transistor, the sensing circuit layer comprises a second transistor, the emitting structure layer is disposed on a side of the drive circuit layer away from the base substrate, and the photoelectric structure layer is disposed on a side of the sensing circuit layer away from the base substrate; the emitting structure layer comprises an anode, an organic emitting layer, and a cathode; the photoelectric structure layer comprises a photodiode and an electrode lead; and the anode is arranged in a same layer as the electrode lead.

10 . The display substrate according to claim 1 , wherein the display substrate comprises a light emitting region and a sensing region; the circuit layer comprises a drive circuit layer disposed in the light emitting region and a sensing circuit layer disposed in the sensing region, the drive circuit layer comprises a first transistor, the sensing circuit layer comprises a second transistor, the emitting structure layer is disposed on a side of the drive circuit layer away from the base substrate, and the photoelectric structure layer is disposed on a side of the sensing circuit layer away from the base substrate; the emitting structure layer comprises an anode, an organic emitting layer, and a cathode; the photoelectric structure layer comprises a photodiode and an electrode lead; and the anode is arranged in a same layer as the electrode lead.

11 . The display substrate according to claim 10 , wherein a thickness of the impurity absorption layer is 200 Å to 1000 Å and a thickness of the photodiode is 0.8 μm to 1.2 μm.

12 . The display substrate according to claim 10 , wherein the drive circuit layer comprises: a first shield layer disposed on the base substrate, the impurity absorption layer disposed on a side of the first shield layer away from the base substrate, the first insulation layer disposed on a side of the impurity absorption layer away from the base substrate, and the first transistor disposed on a side of the first insulation layer away from the base substrate; the sensing circuit layer comprises: a second shield layer disposed on the base substrate, the impurity absorption layer disposed on a side of the second shield layer away from the base substrate, the first insulation layer disposed on a side of the impurity absorption layer away from the base substrate, and the second transistor disposed on a side of the first insulation layer away from the base substrate.

13 . The display substrate according to claim 12 , wherein the first transistor comprises: a first active layer disposed on a side of the first insulation layer away from the base substrate, a second insulation layer disposed on a side of the first active layer away from the base substrate, a first gate electrode disposed on a side of the second insulation layer away from the base substrate, a third insulation layer disposed on a side of the first gate electrode away from the base substrate, a first source electrode and a first drain electrode disposed on a side of the third insulation layer away from the base substrate, and the first source electrode is connected with the first shield layer through a via; a second active layer of the second transistor is arranged in a same layer as the first active layer, a second gate electrode of the second transistor is arranged in a same layer as the first gate electrode, and a second source electrode and a second drain electrode of the second transistor are arranged in a same layer as the first sour

Assignees

• Boe Technology Group Co Ltd
• Beijing Boe Technology Dev Co Ltd

Inventors

• He Jiayu
• Ning ce
• Li Zhengliang
• Hu hehe
• Liu Fengjuan
• Liu Wei
• Zhou Tianmin
• Zhao Kun

Classifications

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D30/6734

  having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs · CPC title

• H10K59/60

  OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title