Light-emitting device

Patent metadata

Field	Value
Publication number	US-12501751-B2
Application number	US-202217945562-A
Country	US
Kind code	B2
Filing date	Sep 15, 2022
Priority date	Mar 19, 2020
Publication date	Dec 16, 2025
Grant date	Dec 16, 2025

Abstract

A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 μm and that is not greater than 80 μm.

First claim

What is claimed is:

1 . A light-emitting device, comprising:
a semiconductor light-emitting stack including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between said first conductivity type semiconductor layer and said second conductivity type semiconductor layer; a first electrode disposed on said semiconductor light-emitting stack and electrically connected to said first conductivity type semiconductor layer; a second electrode disposed on said semiconductor light-emitting stack and electrically connected to said second conductivity type semiconductor layer; an insulating layer at least partially covering said semiconductor light-emitting stack; and a passivation layer disposed on said insulating layer and covering said semiconductor light-emitting stack, a side surface of said first electrode and a side surface of said second electrode, to expose an upper surface of each of said first electrode and said second electrode, wherein said first electrode and said second electrode are separated by a distance that is greater than 0 μm and that is not greater than 80 μm, and wherein said semiconductor light-emitting stack has a first surface that has a light-emitting area and an electrode area on which said first electrode and said second electrode are disposed, said passivation layer directly contacting a part of said light-emitting area.

2 . The light-emitting device of claim 1 , wherein said insulating layer is made of a material selected from the group consisting of Si x1 N, Si x2 ON, Si x1 N doped with phosphorus, and Si x2 ON doped with phosphorus, x1 being a mole ratio and ranging from 0.75 to 2, x2 being a mole ratio and ranging from 0.5 to 1.0.

3 . The light-emitting device of claim 1 , wherein said insulating layer has a thickness ranging from 2 nm to 100 nm.

4 . The light-emitting device of claim 1 , wherein said insulating layer is made of Si x1 N, x1 being a mole ratio and ranging from 0.8 to 2.

5 . The light-emitting device of claim 1 , wherein said insulating layer is formed to be disposed between said side surface of said first electrode and said passivation layer, and between said side surface of said second electrode and said passivation layer.

6 . The light-emitting device of claim 1 , wherein said passivation layer has a thickness ranging from 100 nm to 5 μm.

7 . The light-emitting device of claim 1 , comprising a plurality of said insulating layers and a plurality of said passivation layers that are alternately stacked on said semiconductor light-emitting stack and that are formed into a laminate that includes a plurality of layer units, each of said layer units including one of said insulating layers and one of said passivation layers that is disposed on said one of said insulating layers, the number of said layer units ranging from 2 to 5.

8 . The light-emitting device of claim 7 , wherein each of said passivation layers has a thickness ranging from 50 nm to 500 nm.

9 . The light-emitting device of claim 7 , wherein a topmost layer of said laminate that is distal from said semiconductor light-emitting stack is one of said passivation layers.

10 . The light-emitting device of claim 1 , wherein said passivation layer includes one of silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), and a combination thereof.

11 . The light-emitting device of claim 1 , wherein said insulating layer is made of SiaIN, and said passivation layer is made of Si a2 N, a1 being a mole ratio and being greater than 0.8 and being not greater than 2, a2 being a mole ratio and being not smaller than 0.6 and being not greater than 0.8.

12 . The light-emitting device of claim 1 , further comprising a substrate that is disposed on said semiconductor light-emitting stack opposite to the first and second electrodes, at least one side of an upper surface of said substrate having a length ranging from 40 μm to 300 μm.

13 . The light-emitting device of claim 1 , wherein the light-emitting device has a horizontal cross-sectional area that has a size ranging from 30000 μm 2 to 40000 μm 2 , said distance ranging from 60 μm to 80 μm.

14 . The light-emitting device of claim 1 , wherein the light-emitting device has a horizontal cross-sectional area that has a size ranging from 20000 μm 2 to 30000 μm 2 , said distance ranging from 40 μm to 60 μm.

15 . The light-emitting device of claim 1 , wherein the light-emitting device has a horizontal cross-sectional area that has a size that is greater than 0 μm 2 and that is not greater than 20000 μm 2 , said distance ranging from 20 μm to 40 μm.

16 . The light-emitting device of claim 1 , wherein said semiconductor light-emitting stack includes a first part and a second part connected to said first part, said first electrode that is disposed on said first part, said second electrode that is disposed on said second part, each of said first part and said second part having an upper surface, said second part including a sidewall that has an interconnecting surface that interconnects said upper surface of said first part and said upper surface of said second part, said upper and interconnecting surfaces of said second part and said upper surface of said first part corporately forming a part of said first surface, a portion of said insulating layer being partially disposed on said first electrode, extending to said interconnecting surface of said second part, and partially covering said upper surface of said second part, a region of said portion of said insulating layer, which is disposed on said upper surface of said second part, having a width that is not smaller than 5 μm.

17 . The light-emitting device of claim 16 , wherein said width ranges from 5 μm to 20 μm.

18 . The light-emitting device of claim 1 , comprising a plurality of said insulating layers and a plurality of said passivation layers that are alternately stacked on said semiconductor light-emitting stack and that are formed into a laminate that includes a plurality of layer units, each of said layer units including one of said insulating layers and one of said passivation layers that is disposed on said one of said insulating layers, a bottommost layer of said laminate that is proximate to said semiconductor light-emitting stack being one of said insulating layers, a topmost layer of said laminate that is distal from said semiconductor light-emitting stack being one of said passivation layers and having a thickness greater than that of each of the other ones of said passivation layers.

19 . A display apparatus, comprising the light-emitting device as claimed in claim 1 .

20 . A light-emitting device, comprising:
a semiconductor light-emitting stack including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between said first conductivity type semiconductor layer and said second conductivity type semiconductor layer; a first electrode disposed on said semiconductor light-emitting stack and electrically connected to said first conductivity type semiconductor layer; a second electrode disposed on said semiconductor light-emitting stack and electrically connected to said second conductivity type semiconductor layer; an insulating layer at least partially covering said semiconductor light-emitting stack; and a passivation layer disposed on said insulating layer and covering said semiconductor light-emitting stack, a side surface of said first electrode and

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Lin Su-Hui
• Huang Yu-Chieh
• Wang Feng
• He Anhe
• Wang Qing
• Zhu Xiushan
• Peng Kang-Wei
• Hong ling-yuan

Classifications

• H10H20/84 Primary

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/835

  Reflective materials · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title