Light-emitting device and production method thereof

Patent metadata

Field	Value
Publication number	US-12501748-B2
Application number	US-202217825034-A
Country	US
Kind code	B2
Filing date	May 26, 2022
Priority date	Nov 28, 2019
Publication date	Dec 16, 2025
Grant date	Dec 16, 2025

Abstract

A light-emitting device includes a light-emitting laminating structure having an ohmic contact layer, a transition layer, a current-spreading layer, a first type semiconductor layer, an active layer, and a second type semiconductor layer. The current-spreading layer has aluminum, and, in the current-spreading layer, a relative content of the aluminum with respect to a composition of the current-spreading layer is fixed. The transition layer has aluminum, and, in the transition layer, a relative content of the aluminum with respect to a composition of the transition layer is less than the relative content of the aluminum in the current-spreading layer. A method for producing the light-emitting device is also disclosed.

First claim

What is claimed is:

1 . A light-emitting device, comprising:
a light-emitting laminating structure which includes
an ohmic contact layer,
a transition layer disposed on said ohmic contact layer,
a current-spreading layer disposed on said transition layer opposite to said ohmic contact layer,
a first type semiconductor layer disposed on said current-spreading layer opposite to said transition layer,
an active layer disposed on said first type semiconductor layer opposite to said current-spreading layer, and
a second type semiconductor layer disposed on said active layer opposite to said first type semiconductor layer,
wherein said current-spreading layer has aluminum, and, in said current-spreading layer, a relative content of said aluminum with respect to a composition of said current-spreading layer is fixed, and
said transition layer has aluminum, and, in said transition layer, a relative content of said aluminum with respect to a composition of said transition layer is less than said relative content of said aluminum in said current-spreading layer.

2 . The light-emitting device according to claim 1 , wherein said transition layer and said current-spreading layer have the same component element which is gallium or arsenide.

3 . The light-emitting device according to claim 1 , wherein said ohmic contact layer has a composition represented by Al x Ga 1-x As, wherein 0≤x≤1.

4 . The light-emitting device according to claim 3 , wherein the composition of said current-spreading layer is represented by Al y Ga 1-y As, wherein 0.1≤y≤0.4, and y−x≥0.1.

5 . The light-emitting device according to claim 1 , wherein said light-emitting laminating structure further includes an aluminum-free layer that is interposed between said ohmic contact layer and said transition layer, said aluminum-free layer is an InGaP layer, said aluminum-free layer has a doping type the same as that of said current-spreading layer, and a thickness that ranges from 50 nm to 150 nm.

6 . The light-emitting device according to claim 1 , wherein said transition layer has a thickness ranging from 0.05 μm to 1 μm.

7 . The light-emitting device according to claim 1 , further comprising a first electrode disposed on said ohmic contact layer, said current-spreading layer having a first portion that is corresponding in position to said first electrode, said first portion having a thickness ranging from 5 μm to 8 μm.

8 . The light-emitting device according to claim 1 , further comprising a first electrode including a main part having a bonding position, and at least one extension part, said main part is not disposed on said ohmic contact layer, said extension part is disposed on said ohmic contact layer.

9 . The light-emitting device according to claim 8 , wherein said light-emitting laminating structure further includes an InGaP layer that is interposed between said ohmic contact layer and said transition layer, said first electrode includes a main part having a bonding position, and at least one extension part, said main part is disposed on said InGaP layer, said extension part is disposed on said ohmic contact layer.

10 . The light-emitting device according to claim 9 , wherein said relative content of said aluminum in said transition layer is increased from said InGaP layer to said current-spreading layer.

11 . The light-emitting device according to claim 1 , further comprising a first electrode disposed on said ohmic contact layer, said current-spreading layer having a first portion and a second portion that is outside of said first portion, said second portion having a thickness less than said thickness of said first portion.

12 . The light-emitting device according to claim 11 , wherein said thickness of said second portion of said current-spreading layer ranges from 2 μm to 4 μm.

13 . The light-emitting device according to claim 11 , wherein said second portion of said current-spreading layer is formed with a patterned structure and functions as a light-exiting surface.

14 . The light-emitting device according to claim 11 , wherein said second portion has a roughness not greater than 1 μm.

15 . The light-emitting device according to claim 1 , further comprising:
a substrate disposed on said light-emitting laminating structure; and a first electrode that is disposed on said substrate opposite to said light-emitting laminating structure, wherein said substrate is a conductive substrate, said light-emitting laminating structure has a light-exiting surface opposite to said substrate.

16 . The light-emitting device according to claim 1 , wherein said an ohmic contact layer is GaAs.

17 . A light-emitting device, comprising:
a light-emitting laminating structure which includes
an aluminum-free layer,
a transition layer disposed on said aluminum-free layer,
a current-spreading layer disposed on said transition layer opposite to said aluminum-free layer,
a first type semiconductor layer disposed on said current-spreading layer opposite to said transition layer,
an active layer disposed on said first type semiconductor layer opposite to said current-spreading layer, and
a second type semiconductor layer disposed on said active layer opposite to said first type semiconductor layer,
wherein
said current-spreading layer has aluminum, and, in said current-spreading layer, a relative content of said aluminum with respect to a composition of said current-spreading layer is fixed, and
said transition layer has aluminum, and, in said transition layer, a relative content of said aluminum with respect to a composition of said transition layer is less than said relative content of said aluminum in said current-spreading layer.

18 . A method for producing a light-emitting device, comprising:
forming an ohmic contact layer; forming a transition layer on the ohmic contact layer; forming a current-spreading layer on the transition layer opposite to the ohmic contact layer; forming a first type semiconductor layer on the current-spreading later opposite to the transition layer; forming an active layer on the first type semiconductor layer opposite to the current-spreading layer; and forming a second type semiconductor layer on the active layer opposite to the first type semiconductor layer, wherein the current-spreading layer has aluminum, and, in said current-spreading layer, a relative content of the aluminum with respect to a composition of the current-spreading layer is fixed, and the transition layer has aluminum, and, in said transition layer, a relative content of the aluminum with respect to a composition of the transition layer is less than the relative content of the aluminum in the current-spreading layer.

19 . The method according to claim 18 , further comprising:
forming an electrode on the ohmic contact layer such that a part of the ohmic contact layer is exposed from the electrode, the current-spreading layer having a first portion that is corresponding in position to the electrode, and a second portion that is outside of the electrode; removing the part of the ohmic contact layer exposed from the electrode and the transition layer underlying the exposed part of the ohmic contact layer to expose the second portion of the current-spreading layer; and patterning the second portion of the current-spreading layer to form a patterned second portion which functions as a light-exiting surface.

20 . The method according to claim 19 , wherein the patterned second portion has a thickness t

Assignees

• Tianjin Sanan Optoelectronics Co Ltd

Inventors

• Hsiao Chihhung
• Cai Kunhuang
• Wang Duxiang
• Chang Chia-Hung

Classifications

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10H20/018

  Bonding of wafers · CPC title

• H10H20/0137

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/815

  having stress relaxation structures, e.g. buffer layers · CPC title

• H10H20/8215

  characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping · CPC title