Method of forming reversed pattern and method of manufacturing electronic device
US-2021173309-A1 · Jun 10, 2021 · US
US12498635B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12498635-B2 |
| Application number | US-201916686925-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 18, 2019 |
| Priority date | Dec 5, 2018 |
| Publication date | Dec 16, 2025 |
| Grant date | Dec 16, 2025 |
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A resist composition including a base material component (A) whose solubility in a developing solution is changed due to the action of an acid, and a compound (D0) formed of an anion moiety and a cation moiety which is represented by Formula (d0), in which the cation moiety of the compound (D0) has a Log P value of less than 7.7. In the formula, M m+ represents an m-valent organic cation, R d0 represents a substituent, p represents an integer of 0 to 3, q represents an integer of 0 to 3, n represents an integer of 2 or greater, and a relationship of “n+p≤(q×2)+5” is satisfied.
Opening claim text (preview).
What is claimed is: 1 . A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition comprising: a base material component (A) whose solubility in a developing solution is changed due to the action of an acid; and a compound (DO) formed of an anion moiety and a cation moiety, which is represented by Formula (d0), wherein the cation moiety of the compound (DO) has a Log P value of less than 7.7, wherein M m+ represents an m-valent organic cation represented by Formula (ca-d0), m represents 1, R d0 represents a substituent, p represents an integer of 0 to 3, and in a case where p represents 2 or 3, a plurality of substituents as R d0 may be the same as or different from one another, q represents an integer of 0 to 3, n represents an integer of 2 or greater, where a relationship of “n+p≤(q×2)+5” is satisfied, wherein R d1 represents an aryl group which may have a substituent; and R d2 and R d3 each independently represent an aryl group which may have a substituent or may be bonded to each other to form a ring with a sulfur atom in Formula (ca-d0); provided that when any of R d1 , R d2 and R d3 has a substituent represented by any of Formula (ca-r-1) to (ca-r-7), R′ 201 in Formula (ca-r-1) to (ca-r-7) is a hydrogen atom, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, 2 . A method of forming a resist pattern, comprising: forming a resist film on a support using the resist composition according to claim 1 ; exposing the resist film; and developing the exposed resist film to form a resist pattern. 3 . A compound formed of an anion moiety and a cation moiety, which is represented by Formula (d0), wherein a Log P value of the cation moiety is less than 7.7, wherein M m+ represents an m-valent organic cation represented by Formula (ca-d0), m represents 1, R d0 represents a substituent, p represents an integer of 0 to 3, and in a case where p represents 2 or 3, a plurality of substituents as R d0 may be the same as or different from one another, q represents an integer of 0 to 3, n represents an integer of 2 or greater, where a relationship of “n+p≤(q×2)+5” is satisfied, wherein R d1 represents an aryl group which may have a substituent; and R d2 and R d3 each independently represent an aryl group which may have a substituent or may be bonded to each other to form a ring with a sulfur atom in Formula (ca-d0); provided that when any of R d1 , R d2 and R d3 has a substituent represented by any of Formula (ca-r-1) to (ca-r-7), R′ 201 in Formula (ca-r-1) to (ca-r-7) is a hydrogen atom, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent,
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