Ranging image sensor

Patent metadata

Field	Value
Publication number	US-12498484-B2
Application number	US-202017788000-A
Country	US
Kind code	B2
Filing date	Dec 7, 2020
Priority date	Dec 26, 2019
Publication date	Dec 16, 2025
Grant date	Dec 16, 2025

Abstract

In a ranging image sensor, each pixel includes an avalanche multiplication region, a charge distribution region, a pair of first charge transfer regions, a pair of second charge transfer regions, a well region, a photogate electrode, a pair of first transfer gate electrodes, and a pair of second transfer gate electrodes. The first multiplication region of the avalanche multiplication region is formed so as to overlap the charge distribution region and so as not to overlap the well region in the Z direction. The second multiplication region of the avalanche multiplication region is formed so as to overlap the charge distribution region and the well region in the Z direction.

First claim

The invention claimed is:

1 . A ranging image sensor, comprising:
a semiconductor layer having a first surface on a first side and a second surface on a second side opposite to the first side and forming a plurality of pixels arranged along the first surface; and an electrode layer provided on the first surface and forming the plurality of pixels, wherein each of the plurality of pixels includes: an avalanche multiplication region including a first conductive type first multiplication region formed in the semiconductor layer and a second conductive type second multiplication region formed on the first side of the first multiplication region in the semiconductor layer; a second conductive type charge distribution region formed on the first side of the second multiplication region in the semiconductor layer and connected to the second multiplication region; a second conductive type first charge transfer region formed on the first side of the second multiplication region in the semiconductor layer and connected to the charge distribution region; a second conductive type second charge transfer region formed on the first side of the second multiplication region in the semiconductor layer and connected to the charge distribution region; a first conductive type well region formed on the first side of the second multiplication region in the semiconductor layer; a photogate electrode formed on the first side of the charge distribution region in the electrode layer; a first transfer gate electrode formed on the first side of the charge distribution region in the electrode layer so as to be located on the first charge transfer region side with respect to the photogate electrode; and a second transfer gate electrode formed on the first side of the charge distribution region in the electrode layer so as to be located on the second charge transfer region side with respect to the photogate electrode, the first multiplication region is formed so as to overlap the charge distribution region and so as not to overlap the well region in a thickness direction of the semiconductor layer, and the second multiplication region is formed so as to overlap the charge distribution region and the well region in the thickness direction of the semiconductor layer.

2 . The ranging image sensor according to claim 1 ,
wherein each of the plurality of pixels further includes a second conductive type barrier region formed between the second multiplication region and the well region in the semiconductor layer.

3 . The ranging image sensor according to claim 2 ,
wherein the barrier region includes the well region when viewed from the thickness direction of the semiconductor layer.

4 . The ranging image sensor according to claim 2 ,
wherein each of the plurality of pixels further includes a second conductive type sink region formed on the first side of the barrier region in the semiconductor layer and connected to the barrier region.

5 . The ranging image sensor according to claim 4 ,
wherein the sink region is connected to the second charge transfer region.

6 . The ranging image sensor according to claim 1 ,
wherein the second multiplication region includes a first region overlapping the charge distribution region in the thickness direction of the semiconductor layer and a second region overlapping the well region in the thickness direction of the semiconductor layer, and a concentration of impurities in the second region is higher than a concentration of impurities in the first region.

7 . The ranging image sensor according to claim 6 ,
wherein the second region includes the well region when viewed from the thickness direction of the semiconductor layer.

8 . The ranging image sensor according to claim 6 ,
wherein each of the plurality of pixels further includes a second conductive type sink region formed on the first side of the second region in the semiconductor layer and connected to the second region.

9 . The ranging image sensor according to claim 8 ,
wherein the sink region is connected to the second charge transfer region.

10 . The ranging image sensor according to claim 1 ,
wherein a trench for separating each of the plurality of pixels from each other is formed on the first surface of the semiconductor layer.

11 . The ranging image sensor according to claim 1 ,
wherein the first multiplication region is separated for each of the plurality of pixels.

12 . The ranging image sensor according to claim 1 , further comprising:
a wiring layer provided on the first surface so as to cover the electrode layer and electrically connected to each of the plurality of pixels.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Mase Mitsuhito
• HIRAMITSU Jun
• Shimada Akihiro
• Ishii Hiroaki
• Ito Toshinori
• Tanaka Yuma

Classifications

• G01S7/4816

  of receivers alone · CPC title

• H10F30/225

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/807

  Pixel isolation structures · CPC title

• G01S17/89 Primary

  for mapping or imaging · CPC title