Nanomaterial, preparation method thereof, and quantum dot light-emitting diode

Patent metadata

Field	Value
Publication number	US-12495667-B2
Application number	US-202117995852-A
Country	US
Kind code	B2
Filing date	Dec 22, 2021
Priority date	Dec 28, 2020
Publication date	Dec 9, 2025
Grant date	Dec 9, 2025

Abstract

The present disclosure relates to a nanomaterial, a light-emitting diode device, and a preparation method thereof. The nanomaterial includes a ZnO nanoparticle and an In 2 O 3 shell layer covering a surface of the ZnO nanoparticle. In the present disclosure, the In 2 O 3 shell layer are coated on the surface of the ZnO nanoparticle to form a ZnO@ In 2 O 3 core shell structure, that is, prepare the nanomaterial. In the present disclosure, In 2 O 3 having a wide bandgap is used as a shell layer to cover a semiconductor ZnO nanoparticle having a relatively narrow bandgap, which can effectively passivate the surface of the ZnO nanoparticle to reduce the surface defects and relieve lattice mismatch. Meanwhile, holes may be effectively blocked from being transported from a light-emitting layer to a cathode to improve the recombination efficiency of electrons and holes on the light-emitting layer. Thus, the light-emitting performance of the light-emitting device may be improved.

First claim

What is claimed is:

1 . A preparation method of a nanomaterial comprising:
providing a ZnO nanoparticle; depositing an In 2 O 3 shell layer on a surface of the ZnO nanoparticle; and after depositing the In 2 O 3 shell layer on the surface of the ZnO nanoparticle, loading Au atoms and/or Au microclusters on the In 2 O 3 shell layer to prepare the nanomaterial.

2 . The preparation method of the nanomaterial according to claim 1 , wherein preparing the ZnO nanoparticle comprises:
dissolving a zinc salt in an organic solvent to obtain a zinc salt solution; adding an alkali solution to the zinc salt solution to obtain a ZnO nanoparticle solution; and performing precipitation and drying on the ZnO nanoparticle solution to prepare the ZnO nanoparticle.

3 . The preparation method of the nanomaterial according to claim 2 , wherein depositing the In 2 O 3 shell layer on the surface of the ZnO nanoparticle comprises:
dissolving an indium salt in an organic solvent to obtain an indium salt solution; dissolving the ZnO nanoparticle in organic alcohol to obtain a ZnO nanoparticle alcohol solution; adding the ZnO nanoparticle alcohol solution to the indium salt solution and then adding the alkali solution to mix to react to obtain an In 2 O 3 shell layer covered ZnO nanoparticle solution; and performing precipitation and drying on the In 2 O 3 shell layer covered ZnO nanoparticle solution to obtain an In 2 O 3 shell layer covered ZnO nanoparticle.

4 . The preparation method of the nanomaterial according to claim 3 , wherein loading the Au atoms and/or Au microclusters on the In 2 O 3 shell layer to prepare the nanomaterial comprises:
dissolving the In 2 O 3 shell layer covered ZnO nanoparticle in organic alcohol to obtain an In 2 O 3 shell layer covered ZnO nanoparticle alcohol solution; and adding a gold salt and the In 2 O 3 shell layer covered ZnO nanoparticle alcohol solution to a mixed solution composed of oleylamine and octadecene, and performing mixing at 80 to 150° C., to load the Au atoms and/or Au microclusters on the In 2 O 3 shell layer to prepare the nanomaterial.

5 . The preparation method of the nanomaterial according to claim 4 , wherein:
the gold salt comprises one or more of chloroauric acid, ammonium tetrachloroaurate hydrate, and (triphenylphosphine) gold chloride the indium salt comprises one or more of indium nitrate, indium chloride, and indium acetate; the zinc salt comprises one or more of zinc chloride, zinc nitrate, and zinc acetate; the organic solvent comprises one or both dimethyl formamide (DMF) and dimethyl sulfoxide (DMSO); or the alkali solution comprises one or more of sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, and ammonia.

6 . The preparation method of the nanomaterial according to claim 5 , wherein the organic alcohol comprises at least one of methanol, ethanol, or ethylene glycol.

7 . The preparation method of the nanomaterial according to claim 5 , wherein:
a concentration of an indium salt solution ranges from 0.1 to 0.3 M; and in the preparation method, pH of a reaction condition is maintained at 8 to 10.

8 . A preparation method of a light-emitting diode comprising:
preparing an electron transport layer on a cathode, a material of the electron transport layer being a nanomaterial, and the nanomaterial including a ZnO nanoparticle, an In 2 O 3 shell layer covering a surface of the ZnO nanoparticle, and Au atoms and/or Au microclusters loaded on the In 2 O 3 shell layer; preparing a light-emitting layer on the electron transport layer; and preparing an anode on the light-emitting layer to prepare the light-emitting diode; or the preparation method of the light-emitting diode comprising:
preparing the light-emitting layer on the anode;
preparing the electron transport layer on the light-emitting layer, the material of the electron transport layer being the nanomaterial, and the nanomaterial including the ZnO nanoparticle, the In 2 O 3 shell layer covering the surface of the ZnO nanoparticle, and the Au atoms and/or the Au microclusters loaded on the In 2 O 3 shell layer; and
preparing the cathode on the electron transport layer to prepare the light-emitting diode.

9 . A nanomaterial comprising:
a ZnO nanoparticle; an In 2 O 3 shell layer covering a surface of the ZnO nanoparticle; and Au atoms and/or Au microclusters loaded on the In 2 O 3 shell layer.

10 . A light-emitting diode device comprising:
a cathode; an anode; a light-emitting layer arranged between the cathode and the anode; and an electron transport layer arranged between the cathode and the light-emitting layer; wherein a material of the electron transport layer is a nanomaterial comprising a ZnO nanoparticle, an In 2 O 3 shell layer covering a surface of the ZnO nanoparticle, and Au atoms and/or Au microclusters loaded on the In 2 O 3 shell layer.

11 . The light emitting diode device according to claim 10 , wherein the light-emitting layer is a quantum dot light-emitting layer, a quantum dot of the quantum dot light-emitting layer comprises any one of red, green, and blue quantum dots, and the quantum dot comprises at least one of CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, CuInS, or CuInSe.

12 . The light emitting diode device of claim 11 , wherein:
a thickness of the quantum dot light-emitting layer ranges from 20 to 60 nm; and a thickness of the electron transport layer ranges from 20 to 60 nm.

13 . The preparation method of the light-emitting diode according to claim 8 , wherein the nanomaterial is prepared by:
providing the ZnO nanoparticle; depositing the In 2 O 3 shell layer on the surface of the ZnO nanoparticle; and loading the Au atoms and/or the Au microclusters on the In 2 O 3 shell layer.

14 . The preparation method of the light-emitting diode according to claim 13 , wherein preparing the ZnO nanoparticle comprises:
dissolving a zinc salt in an organic solvent to obtain a zinc salt solution; adding an alkali solution to the zinc salt solution to obtain a ZnO nanoparticle solution; and performing precipitation and drying on the ZnO nanoparticle solution to prepare the ZnO nanoparticle.

15 . The preparation method of the light-emitting diode according to claim 14 , wherein depositing the In 2 O 3 shell layer on the surface of the ZnO nanoparticle comprises:
dissolving an indium salt in an organic solvent to obtain an indium salt solution; dissolving the ZnO nanoparticle in organic alcohol to obtain a ZnO nanoparticle alcohol solution; adding the ZnO nanoparticle alcohol solution to the indium salt solution and then adding the alkali solution to mix to react to obtain an In 2 O 3 shell layer covered ZnO nanoparticle solution; and performing precipitation and drying on the In 2 O 3 shell layer covered ZnO nanoparticle solution to obtain an In 2 O 3 shell layer covered ZnO nanoparticle.

16 . The preparation method of the light-emitting diode according to claim 15 , wherein loading the Au atoms and/or Au microclusters on the In 2 O 3 shell layer to prepare the nanomaterial comprises:
dissolving the In 2 O 3 shell layer covered ZnO nanoparticle in organic alcohol to obtain an In 2 O 3 shell layer covered ZnO nanoparticle alcohol solution; and adding a gold salt and the In 2 O 3 shell layer covered ZnO nanoparticle alcohol solution to a mixed solution composed of oleylamine and octadecene, and performing mixing at 80 to 150° C., to load the Au atoms and/or Au microclusters on the In 2 O

Assignees

• Tcl Tech Group Corp

Inventors

• Guo Yulin
• Wu Longjia
• Zhang Tianshuo
• Li Junjie

Classifications

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• C09K11/883

  with zinc or cadmium · CPC title

• C09K11/881

  Chalcogenides · CPC title

• C09K11/623

  with zinc or cadmium · CPC title

• C09K11/58

  containing copper, silver or gold · CPC title