High temperature oxide-based system for thermoelectric sensor applications

US12490654B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12490654-B2
Application numberUS-202017038736-A
CountryUS
Kind codeB2
Filing dateSep 30, 2020
Priority dateSep 30, 2019
Publication dateDec 2, 2025
Grant dateDec 2, 2025

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Abstract

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Disclosed herein are embodiments of n and p-type components with high temperature refractory material having a perovskite crystal structure. The material may be doped to generate, for example, p-type and n-type sensor legs. In some embodiments, expensive materials may be avoided. Further, the disclosed materials can avoid high temperature reaction between n-type components and p-type components.

First claim

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What is claimed is: 1 . A thermoelectric system comprising: a p-type material formed from LnAlO 3 doped with strontium and cobalt and having a perovskite structure with a general chemical composition of ABX 3 , A and B being cations Ln 1-x Sr x and Al 1-y Co y , X being an anion O 3+/−z that bonds to both A and B, the A cations located in corners of the perovskite structure, the B cations located in a body centered position, and the X anions sitting in face centered positions, the p-type material being Ln 1-x Sr x Al 1-y Co y O 3+/−z , x being between 0 and 1, y being between 0 and 1, and z<1; and an n-type material formed from LnAlO 3 doped with manganese and niobium and having a perovskite structure with a general chemical composition of ABX 3 , A and B being cations Ln and Al 1-x-y Mn y Nb x , X being an anion O 3+/−z that bonds to both A and B, the A cations located in corners of the perovskite structure, the B cations located in a body centered position, and the X anions sitting in face centered positions, the n-type material being LnAl 1-x-y Mn y Nb x O 3+/−z , x being between 0 and 0.2, y being between 0 and 1, and z<1. 2 . The thermoelectric system of claim 1 wherein the system does not contain platinum. 3 . The thermoelectric system of claim 1 wherein the system does not contain indium tin oxide. 4 . The thermoelectric system of claim 1 wherein the n-type material and p-type material are unreactive at temperatures of 400-1200° C. 5 . The thermoelectric system of claim 1 wherein Ln is selected from the group consisting of La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Y, Yb, and Lu. 6 . The thermoelectric system of claim 1 wherein the thermoelectric system is configured to generate electricity. 7 . The thermoelectric system of claim 1 wherein the thermoelectric system is configured to measure temperature. 8 . The thermoelectric system of claim 1 wherein the thermoelectric system is configured to change a temperature of an object. 9 . The thermoelectric system of claim 1 further comprising a plurality of p-type components including the p-type material and a plurality of n-type components including the n-type material. 10 . The thermoelectric system of claim 9 further comprising a substrate supporting the p-type material and the n-type material. 11 . The thermoelectric system of claim 10 wherein the plurality of p-type components and the plurality of n-type components are arranged in a grid on the substrate. 12 . The thermoelectric system of claim 10 further comprising a plurality of electrical connections extending from the substrate. 13 . The thermoelectric system of claim 12 wherein the plurality of electrical connections include wires, tubes, or rods. 14 . The thermoelectric system of claim 1 further comprising a housing containing the p-type material and the n-type material. 15 . The thermoelectric system of claim 14 further comprising a plurality of electrical connections including wires, tubes, or rods. 16 . A thermoelectric sensor comprising: a p-type material formed from LnAlO 3 doped with strontium and cobalt and having a perovskite structure with a general chemical composition of ABX 3 , A and B being cations Ln 1-x Sr x and Al 1-y Co y , X being an anion O 3+/−z that bonds to both A and B, the A cations located in corners of the perovskite structure, the B cations located in a body centered position, and the X anions sitting in face centered positions, the p-type material being Ln 1-x Sr x Al 1-y Co y O 3+/−z , x being between 0 and 1, y being between 0 and 1, and z<1; and an n-type material formed from LnAlO 3 doped with manganese and niobium and having a perovskite structure with a general chemical composition of ABX 3 , A and B being cations Ln and Al 1-x-y Mn y Nb x , X being an anion O 3+/−z that bonds to both A and B, the A cations located in corners of the perovskite structure, the B cations located in a body centered position, and the X anions sitting in face centered positions, the n-type material being LnAl 1-x-y Mn y Nb x O 3+/−z , x being between 0 and 0.2, y being between 0 and 1, and z<1. 17 . A thermoelectric electricity generator comprising: a p-type material formed from LnAlO 3 doped with strontium and cobalt and having a perovskite structure with a general chemical composition of ABX 3 , A and B being cations Ln 1-x Sr x and Al 1-y Co y , X being an anion O 3+/−z that bonds to both A and B, the A cations located in corners of the perovskite structure, the B cations located in a body centered position, and the X anions sitting in face centered positions, the p-type material being Ln 1-x Sr x Al 1-y Co y O 3+/−z , x being between 0 and 1, y being between 0 and 1, and z<1; and an n-type material formed from LnAlO 3 doped with manganese and niobium and having a perovskite structure with a general chemical composition of ABX 3 , A and B being cations Ln and Al 1-x-y Mn y Nb x , X being an anion O 3+/−z that bonds to both A and B, the A cations located in corners of the perovskite structure, the B cations located in a body centered position, and the X anions sitting in face centered positions, the n-type material being LnAl 1-x-y Mn y Nb x O 3+/−z , x being between 0 and 0.2, y being between 0 and 1, and z<1.

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Classifications

  • Manufacture or treatment · CPC title

  • containing rare earths, e.g. (La0.3Sr0.7)CoO3 · CPC title

  • perovskite-type (ABO3) · CPC title

  • Electric properties · CPC title

  • containing rare earths, e.g. (La1-xCax)MnO3 or LaMnO3 · CPC title

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What does patent US12490654B2 cover?
Disclosed herein are embodiments of n and p-type components with high temperature refractory material having a perovskite crystal structure. The material may be doped to generate, for example, p-type and n-type sensor legs. In some embodiments, expensive materials may be avoided. Further, the disclosed materials can avoid high temperature reaction between n-type components and p-type components.
Who is the assignee on this patent?
Skyworks Solutions Inc
What technology area does this patent fall under?
Primary CPC classification H10N10/855. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 02 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).