Precise multi-state tuning for changing resistance states of reconfigurable intelligent surface utilizing advanced materials

Patent metadata

Field	Value
Publication number	US-12488946-B2
Application number	US-202318194685-A
Country	US
Kind code	B2
Filing date	Apr 3, 2023
Priority date	Apr 3, 2023
Publication date	Dec 2, 2025
Grant date	Dec 2, 2025

Abstract

The technology described herein is directed towards phase-change material-based (e.g., chalcogenide) radio frequency components that can be used in unit cells of a reconfigurable intelligent surface. A multi-state tunable capacitive element for reconfigurable operation is described, in which phase-change material operates as a switching element to controllably vary capacitance of each unit cell. The multi-state tunable capacitive element can be made of multiple subcircuits in which capacitors of various values can be selectively switched in or out to vary the capacitance of the multi-state tunable capacitive element, resulting in a phase change of a unit cell with respect to reflecting or refracting an electromagnetic wave. By arranging the subcircuits with capacitors of different values, and actuating each one in or out of the overall capacitive element, an analog-like variable capacitor is provided to provide more granular phase shift control of cells of a reconfigurable intelligent surface.

First claim

What is claimed is:

1 . A capacitive device, comprising:
a first capacitor having a capacitance value, the capacitor comprising a first conductor, a second conductor, and dielectric material between the first conductor and the second conductor; a tunable capacitive device configured to selectively adjust the capacitance value of the capacitive device to a different capacitive value from the capacitance value of the first capacitor, the tunable capacitive device comprising a first contact coupled to the first conductor and a second contact coupled to the second conductor, and further comprising a capacitive circuit, the capacitive circuit comprising a switching element comprising phase change material that changes to a lower resistance state when heated by a first energy pulse, and changes to a higher resistance state when heated by a second energy pulse that is different from the first energy pulse, the switching element being coupled to a second capacitor to couple the second capacitor to the capacitive circuit, and decouple the second capacitor from the capacitive circuit, based on whether the phase change material is in the lower resistance state or in the higher resistance state; and a controllable energy transfer component that selectively transfers first heat to the phase change material via the first energy pulse to change the phase change material to the lower resistance state, and transfers second heat via the second energy pulse to the phase change material to change the phase change material to the lower resistance state.

2 . The capacitive device of claim 1 , wherein the switching element is electrically coupled in parallel with the second capacitor to join the second capacitor to the capacitive circuit when the switching element is in the higher resistance state to increase the capacitance value of the capacitive device.

3 . The capacitive device of claim 1 , wherein the switching element is electrically coupled in parallel with the second capacitor to join the second capacitor to the capacitive circuit when the switching element is in the higher resistance state, and wherein the second capacitor, when joined to the capacitive circuit, is electrically coupled in series via an inductive component to a third capacitor, the third capacitor electrically being coupled in parallel with a resistive component.

4 . The capacitive device of claim 1 , wherein the capacitive circuit is one capacitive circuit of a group of electrically coupled capacitive circuits, the group comprising at least one other capacitive circuit, and
wherein for each other capacitive circuit of the at least one other capacitive circuit,
the other capacitive circuit comprises a switching element comprising phase change material that changes to the lower resistance state when heated by the first energy pulse, and the higher resistance state when heated by the second energy pulse that is different from the first energy pulse, and
the switching element of the other capacitive circuit is coupled to a second capacitor to couple the second capacitor to the other capacitive circuit, and decouple the second capacitor from the other capacitive circuit, based on whether the phase change material of the other capacitive circuit is in the lower resistance state or in the higher resistance state.

5 . The capacitive device of claim 4 , wherein the capacitive circuits of the group are independently controllable via respective switching elements to tune the capacitive device to one capacitance value of a group of available capacitance values based on respective states of the respective switching elements.

6 . The capacitive device of claim 4 , wherein the capacitive circuits of the group are electrically coupled in parallel with one another.

7 . The capacitive device of claim 6 , wherein at least one of the capacitive circuits of the group has a different capacitance value relative to at least one other capacitive circuit of the group.

8 . The capacitive device of claim 6 , wherein the capacitive circuits of the group have different capacitance values varying from one another in an exponential configuration.

9 . The capacitive device of claim 8 , wherein the exponential configuration comprises a two-to-the-Nth power (2 N ) succession.

10 . The capacitive device of claim 1 , wherein the capacitance value of the capacitive device is variable to control a phase shift of a unit cell of a reconfigurable intelligent surface.

11 . The capacitive device of claim 10 , wherein the reconfigurable element is part of a of a group of reconfigurable unit cells that are collectively arranged into the reconfigurable intelligent surface.

12 . The capacitive device of claim 1 , wherein the first conductor and the second conductor of the first capacitor of the unit cell are configured as a split-ring resonator capacitor.

13 . A variable capacitor, comprising:
a first conductor and a second conductor configured as a first capacitor with a first capacitance value; a variable capacitive circuit coupled between the first conductor and the second conductor to controllably adjust a capacitance of the variable capacitor by adding a variable amount of capacitance to the first capacitance value, the variable capacitive circuit comprising a group of respective subcircuits, and the respective subcircuits of the group comprising respective capacitors electrically coupled to respective chalcogenide material-based switching elements that, independent from one another, remain in respective higher resistance states or respective lower resistance states until selectively actuated; and respective actuators configured to selectively apply heat output to the respective chalcogenide material-based switching elements, the heat output of the respective actuators being selectively controlled with respective electrical pulses that set at least some of the respective chalcogenide material-based switching elements to a lower resistance state or reset at least some of the respective chalcogenide material-based switching elements to a higher resistance state, wherein the respective subcircuits add different amounts of capacitance to the variable capacitive circuit based on whether the respective switching elements of the respective subcircuits are independently set to the lower resistance state or independently reset to the higher resistance state.

14 . The variable capacitor of claim 13 , wherein the respective subcircuits of the group are electrically coupled to one another in parallel.

15 . The variable capacitor of claim 13 , wherein the first conductor and the second conductor are configured as a split-ring resonator capacitor.

16 . The variable capacitor of claim 13 , wherein the variable capacitive circuit is controlled to adjust the capacitance of the variable capacitor to vary a phase shift of a unit cell of a reconfigurable intelligent surface.

17 . A variable capacitor, comprising:
a split ring capacitor having a first capacitance value; and a non-volatile tunable element electrically coupled to contacts of the split ring capacitor to selectively add to the first capacitance value, the non-volatile tunable element comprising a group of capacitive subcircuits electrically coupled in parallel to one another between the contacts, each capacitive subcircuit of the group of capacitive subcircuits comprising a phase change material-based switching element that remains in a high resistance state or a low resistance state as controlled by a set pulse or a reset pulse, respectively, and the phase change material-based switching eleme

Assignees

• Dell Products Lp

Inventors

• Singh Tejinder

Classifications

• H01G4/38

  Multiple capacitors, i.e. structural combinations of fixed capacitors · CPC title

• H10N79/00

  Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00 (ReRAM devices H10B63/00; PCRAM devices H10B63/10) · CPC title

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/8613

  Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel · CPC title

• H10N70/823

  adapted for essentially horizontal current flow, e.g. bridge type devices · CPC title