Light emitting device and fabricating method thereof, and light emitting apparatus

Patent metadata

Field	Value
Publication number	US-12484371-B2
Application number	US-202117921087-A
Country	US
Kind code	B2
Filing date	Dec 15, 2021
Priority date	Dec 15, 2021
Publication date	Nov 25, 2025
Grant date	Nov 25, 2025

Abstract

A light emitting device and a fabricating method thereof, and a light emitting apparatus. The light emitting device includes: a substrate, and an assisting layer and a quantum-dot layer that are provided in stack on one side of the substrate, and the assisting layer is close to the substrate; a material of the assisting layer includes a non-polar polymer; and the quantum-dot layer includes quantum dots and a first ligand material coordinated to the quantum dots, and a property of the first ligand material changes by an effect of illumination, so that a solubility of the quantum-dot layer in an organic solvent changes.

First claim

The invention claimed is:

1 . A light emitting device, wherein the light emitting device comprises: a substrate, and an assisting layer and a quantum-dot layer that are provided in a stack on one side of the substrate, and the assisting layer is close to the substrate;
a material of the assisting layer comprises a non-polar polymer; and the quantum-dot layer comprises quantum dots and a first ligand material coordinated to the quantum dots, and a property of the first ligand material changes by an effect of illumination, so that a solubility of the quantum-dot layer in an organic solvent changes.

2 . The light emitting device according to claim 1 , wherein the material of the assisting layer comprises polyolefin.

3 . The light emitting device according to claim 1 , wherein the first ligand material comprises a copolymer obtained by oligomerization or copolymerization of any one or more of a monoolefin compound, a diolefin compound and a cycloolefin, and the first ligand material is provided with a functional group coordinated to the quantum dots.

4 . The light emitting device according to claim 3 , wherein the first ligand material comprises at least one of 2-propylen-1-thiol, isopentenylthiol, N,N-methylene-bis-acrylamide, 1,6-hexanediol diacrylate and diallyl sulfide.

5 . The light emitting device according to claim 1 , wherein a thickness of the assisting layer is greater than or equal to 1 nm, and less than or equal to 50 nm.

6 . The light emitting device according to claim 1 , wherein the light emitting device is an electroluminescent device, and the light emitting device further comprises: a first electrode provided between the substrate and the assisting layer, and a second electrode provided on one side of the quantum-dot layer that is away from the assisting layer.

7 . The light emitting device according to claim 6 , wherein the light emitting device further comprises an electron transporting layer, a hole transporting layer and a hole injection layer; and
a work function of the first electrode is less than or equal to a work function of the second electrode, the electron transporting layer is provided between the first electrode and the assisting layer, the hole transporting layer and the hole injection layer are provided in a stack between the quantum-dot layer and the second electrode, and the hole injection layer is close to the second electrode; or a work function of the first electrode is greater than or equal to a work function of the second electrode, the hole injection layer and the hole transporting layer are provided in a stack between the first electrode and the assisting layer, the hole transporting layer is close to the assisting layer, and the electron transporting layer is provided between the quantum-dot layer and the second electrode.

8 . A light emitting apparatus, wherein the light emitting apparatus comprises the light emitting device according to claim 1 .

9 . A fabricating method of a light emitting device, wherein the fabricating method comprises:
providing a substrate; forming an assisting layer on one side of the substrate, wherein a material of the assisting layer comprises a non-polar polymer; and forming a quantum-dot layer on one side of the assisting layer that is away from the substrate, wherein the quantum-dot layer comprises quantum dots and a first ligand material coordinated to the quantum dots, and a property of the first ligand material changes by an effect of illumination, so that a solubility of the quantum-dot layer in an organic solvent changes.

10 . The fabricating method according to claim 9 , wherein the step of forming the assisting layer on one side of the substrate comprises:
providing a first solution of the non-polar polymer; and spin-coating, spray-coating or blade-coating the first solution on one side of the substrate, to form the assisting layer.

11 . The fabricating method according to claim 9 , wherein the step of forming the assisting layer on one side of the substrate comprises:
by using an in-situ-polymerization process, forming the assisting layer on one side of the substrate.

12 . The fabricating method according to claim 11 , wherein the step of, by using the in-situ-polymerization process, forming the assisting layer on one side of the substrate comprises:
providing a second solution in which a monomer of the non-polar polymer and a first photoinitiator are mixed; spin-coating, spray-coating or blade-coating the second solution on one side of the substrate; and performing sequentially annealing treatment and exposure treatment to the second solution on the one side of the substrate, to form the assisting layer.

13 . The fabricating method according to claim 9 , wherein the step of forming the quantum-dot layer on the one side of the assisting layer that is away from the substrate comprises:
mixing uniformly the quantum dots coordinated to the first ligand material and a second photoinitiator, to obtain a third solution; spin-coating, spray-coating or blade-coating the third solution on the one side of the assisting layer that is away from the substrate, to obtain a quantum-dot thin film, wherein the quantum-dot thin film comprises a reservation region and a removal region; by using a mask, performing exposure treatment to the quantum-dot thin film, wherein the mask comprises a light transmitting region and a light shielding region, the light transmitting region corresponds to the reservation region, and the light shielding region corresponds to the removal region; and by using a developer, performing development treatment to the quantum-dot thin film obtained after the exposure treatment, to obtain the quantum-dot layer.

14 . The fabricating method according to claim 13 , wherein before the step of mixing uniformly the quantum dots coordinated to the first ligand material and the second photoinitiator, the method further comprises:
providing quantum dots coordinated to a second ligand material; and performing a ligand exchanging reaction between the quantum dots coordinated to the second ligand material and the first ligand material, to obtain the quantum dots coordinated to the first ligand material.

15 . The fabricating method according to claim 9 , wherein the organic solvent comprises toluene and/or chloroform.

Assignees

• Beijing Boe Technology Dev Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Wang Tieshi
• Chen Zhuo
• Li Zhuo
• Yuan Xu
• Zhang Di

Classifications

• C09K11/06

  containing organic luminescent materials · CPC title

• H10K85/151

  Copolymers · CPC title

• H10K71/15

  characterised by the solvent used · CPC title

• H10K85/141

  comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE · CPC title

• H10K59/35 Primary

  comprising red-green-blue [RGB] subpixels · CPC title