Integrated semiconductor optoelectronic component

Patent metadata

Field	Value
Publication number	US-12484336-B2
Application number	US-202117797882-A
Country	US
Kind code	B2
Filing date	Feb 5, 2021
Priority date	Feb 6, 2020
Publication date	Nov 25, 2025
Grant date	Nov 25, 2025

Abstract

An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

First claim

The invention claimed is:

1 . An integrated semiconductor optoelectronic component for sensing ambient light levels, the component comprising:
a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component, the silicon photomultiplier having an active surface area for light detection; an optical filter covering the active surface area of the silicon photomultiplier, the optical filter being adapted to selectively transmit light onto the active surface area as a function of wavelength, wherein the optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions; and readout electronics for processing the output signal of the silicon photomultiplier.

2 . The component of claim 1 , wherein the optical filter is a stack of metallic and dielectric layers.

3 . The component of claim 2 , wherein the metallic and dielectric layers of the stack are stacked in an alternating fashion.

4 . The component of claim 2 , wherein the optical filter has a bottom side proximate to the active surface area of the silicon photomultiplier, and a top side opposite to the bottom side, wherein the bottom side is formed by a metallic layer, and wherein the top side is formed by a dielectric layer.

5 . The component of claim 2 , wherein the optical filter consists of a total of four stacked layers.

6 . The component of claim 2 , wherein the material of each metallic layer is silver.

7 . The component of claim 2 , wherein the material of each dielectric layer is silicon dioxide.

8 . The component of claim 2 , wherein the thickness of a metallic layer is around 15% of the thickness of a dielectric layer.

9 . The component of claim 1 , wherein a dielectric stack is arranged between the optical filter and the active surface area of the silicon photomultiplier.

10 . The component of claim 1 , wherein the readout electronics includes digital circuitry, such as a discriminator and/or a counter.

11 . The component of claim 1 , wherein the component is an ambient light sensor.

12 . The component of claim 1 , further comprising:
an additional silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component, the additional silicon photomultiplier having an active surface area for light detection; and
an additional optical filter covering the active surface area of the additional silicon photomultiplier, the additional optical filter being adapted to selectively transmit light onto the active surface area as a function of wavelength, wherein the additional optical filter is a photopic filter and thus has a spectral transmission curve that mimics the spectral response of the human eye in daylight.

Assignees

• Ams Osram Int Gmbh

Inventors

• Mazzillo Massimo Cataldo
• Dietze Daniel

Classifications

• H10F77/959

  for devices working in avalanche mode · CPC title

• H10F77/331

  for filtering or shielding light, e.g. multicolour filters for photodetectors · CPC title

• H10F30/288

  the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices · CPC title

• H10F30/225

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• G02B27/14

  operating by reflection only · CPC title