Solid-state switch

Patent metadata

Field	Value
Publication number	US-12484235-B2
Application number	US-202217693340-A
Country	US
Kind code	B2
Filing date	Mar 12, 2022
Priority date	Mar 12, 2022
Publication date	Nov 25, 2025
Grant date	Nov 25, 2025

Abstract

A solid-state switch structure including a first solid-state material having a programable electrical resistance comprising a high electrical resistance obtained following a first type programming pulse and a low electrical resistance obtained following a second type programming pulse, a second solid-state material having a programable electrical resistance comprising a high electrical resistance obtained following said second type programming pulse and a low electrical resistance obtained following said first type programming pulse, a first contact made to a first end of said first solid-state material, a second contact made to a first end of said second solid-state material, a third contact made to a second end of said first solid-state material and to a second end of said second solid-state material.

First claim

What is claimed is:

1 . A solid-state switch structure comprising:
a first solid-state material having a programable electrical resistance comprising a high electrical resistance obtained following a first type programming pulse and a low electrical resistance obtained following a second type programming pulse; a second solid-state material having a programable electrical resistance comprising a high electrical resistance obtained following said second type programming pulse and a low electrical resistance obtained following said first type programming pulse; a first contact made to a first end of said first solid-state material; a second contact made to a first end of said second solid-state material; and a third contact made to a second end of said first solid-state material and to a second end of said second solid-state material.

2 . The solid-state switch structure according to claim 1 , wherein the first solid-state material comprises a first phase change material and the second solid-state material comprises a second phase change material.

3 . The solid-state switch structure according to claim 1 , wherein the first solid-state material comprises a first dielectric material and the second solid-state material comprises a second dielectric material.

4 . The solid-state switch structure according to claim 1 , further comprising a resistive heater element disposed adjacent to the first solid-state material.

5 . The solid-state switch structure according to claim 1 , wherein the first solid-state material is disposed in a layer of dielectric material.

6 . The solid-state switch structure according to claim 1 , wherein the first solid-state material is disposed adjacent to a first portion of the third contact, the second solid-state material is disposed adjacent to a second portion of the third contact, and the first portion and second portions of the third contact, do not overlap.

7 . The solid-state switch according to claim 1 , wherein a crystalline state of the first solid-state material and a crystalline state of the second solid-state material form a low resistance connection between the third contact and the second contact.

8 . The solid-state switch according to claim 1 , wherein an amorphous state of the first solid-state material and an amorphous state of the second solid-state material form a low resistance connection between the third contact and the first contact.

9 . A solid-state single pole double throw switch comprising:
a first phase change material having a high resistance crystalline state and a low resistance amorphous state; a second phase change material having a high resistance amorphous state and a low resistance crystalline state; a first contact made to a first end of the first phase change material; a second contact made to a first end of said second phase change material; and a third contact made to a second end of said first phase change material and to a second end of the second phase change material.

10 . The solid-state switch structure according to claim 9 , further comprising a resistive heater element disposed adjacent to first phase change material.

11 . The solid-state switch according to claim 9 , wherein the first phase change material is disposed in a layer of dielectric material.

12 . The solid-state switch according to claim 9 , wherein the crystalline state of the first phase change material and the crystalline state of the second phase change material form a low resistance connection between the third contact and the second contact.

13 . The solid-state switch according to claim 9 , wherein the amorphous state of the first phase change material and the amorphous state of the second phase change material form a low resistance connection between the third contact and the first contact.

14 . The solid-state switch structure according to claim 10 , wherein first phase change material is disposed adjacent to a first portion of the third contact, the second phase change material is disposed adjacent to a second portion of the third contact, and the first portion and second portions of the third contact, do not overlap.

15 . A decision tree comprising a first solid-state switch connected in series with a second solid-state switch, at least one of the first and second solid-state switches comprising:
a first solid-state material having a programable electrical resistance comprising a high electrical resistance obtained following a first type programming pulse and a low electrical resistance obtained following a second type programming pulse; a second solid-state material having a programable electrical resistance comprising a high electrical resistance obtained following said second type programming pulse and a low electrical resistance obtained following said first type programming pulse; a first contact made to a first end of said first solid-state material; a second contact made to a first end of said second solid-state material; and a third contact made to a second end of said first solid-state material and to a second end of said second solid-state material.

16 . The decision tree according to claim 15 , wherein the first solid-state material comprises a first phase change material and the second solid-state material comprises a second phase change material.

17 . The decision tree according to claim 15 , wherein the first solid-state material comprises a first dielectric material and the second solid-state material comprises a second dielectric material.

18 . The decision tree according to claim 15 , further comprising a resistive heater element disposed adjacent to the first solid-state material.

19 . The decision tree according to claim 15 , wherein a crystalline state of the first solid-state material and a crystalline state of the second solid-state material form a low resistance connection between the third contact and the second contact.

20 . The decision tree according to claim 15 , wherein an amorphous state of the first solid-state material and an amorphous state of the second solid-state material form a low resistance connection between the third contact and the first contact.

Assignees

• IBM

Inventors

• Cohen Guy M
• Ando Takashi
• Gong Nanbo

Classifications

• H10N70/8413

  adapted for resistive heating · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10N70/231 Primary

  based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title

• H10N70/011

  Manufacture or treatment of multistable switching devices · CPC title

• H10N70/066

  by filling of openings, e.g. damascene method · CPC title