Techniques and driver circuits configured to monitor load current through a gate injection transistor (GIT)

US12480980B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12480980-B2
Application numberUS-202318498912-A
CountryUS
Kind codeB2
Filing dateOct 31, 2023
Priority dateOct 31, 2023
Publication dateNov 25, 2025
Grant dateNov 25, 2025

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  1. Title

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  5. First independent claim

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Abstract

Official abstract text for this publication.

This disclosure describes a driver circuit configured to control a gate injection transistor (GIT). The driver circuit is configured to output a control current to a gate of the GIT, detect a voltage at the gate of the GIT, and determine a load current through the GIT based on the voltage detected at the gate of the GIT. The voltage at the gate of the GIT may be dependent on both the load current and the control current.

First claim

Opening claim text (preview).

The invention claimed is: 1 . A driver circuit configured to control a gate injection transistor (GIT), wherein the driver circuit is configured to: output a control current to a gate of the GIT; detect a voltage at the gate of the GIT; and determine a load current through the GIT based on the voltage detected at the gate of the GIT, wherein the voltage at the gate of the GIT is dependent on both the load current and the control current, wherein to determine the load current, the driver circuit is configured to: compare the voltage detected at the gate to a fixed reference voltage; and determine the load current based on a pre-defined transfer function associated with the GIT, wherein the pre-defined transfer function defines both the load current through the GIT and the control current at the gate when the voltage detected at the gate is greater than a threshold defined in the pre-defined transfer function associated with the GIT. 2 . The driver circuit of claim 1 , wherein the driver circuit comprises: a turn on circuit comprising a current delivery circuit, wherein the turn on circuit is configured to output the control current to turn on the GIT; a turn off circuit configured to short the control current to turn off the GIT; and a detection circuit configured to determine the load current through the GIT based on the voltage detected at the gate of the GIT. 3 . The driver circuit of claim 1 , wherein to determine the load current, the driver circuit is further configured to: determine a total current though a portion of the GIT based on the voltage detected at the gate; and determine the load current based on a difference between the total current and the control current. 4 . The driver circuit of claim 1 , wherein to output the control current, the driver circuit is configured to: output the control current in an initial boost phase, wherein the initial boost phase defines a first gate voltage; and output the control current in a drive phase that follows the boost phase, wherein the drive phase defines a second gate voltage that is lower than the first gate voltage, wherein to detect the voltage at the gate of the GIT, the driver circuit is configured to detect the second gate voltage. 5 . The driver circuit of claim 1 , wherein to output the control current, the driver circuit is configured to: output the control current in an overload phase that occurs during a drive phase, wherein the driver circuit is configured to identify the overload phase based on the load current and disable the control current in response to identifying the overload phase. 6 . The driver circuit of claim 1 , wherein the driver circuit is further configured to determine a temperature associated with the GIT based on the load current. 7 . A driver circuit configured to control a gate injection transistor (GIT), wherein the driver circuit is configured to: output a control current to a gate of the GIT; detect a voltage at the gate of the GIT; determine a load current through the GIT based on the voltage detected at the gate of the GIT, wherein the voltage at the gate of the GIT is dependent on both the load current and the control current; and generate a reference voltage based on a voltage drop over a reference structure, wherein to generate the reference voltage, the driver circuit is configured to deliver a second current to the reference structure, wherein the second current matches the control current, and wherein the reference structure defines a resistance that matches a resistance of a portion of the GIT, wherein both the load current and the control current flow through the portion of the GIT. 8 . The driver circuit of claim 7 , wherein to determine the load current, the driver circuit is configured to: compare the voltage detected at the gate to the reference voltage; and determine the load current based on comparing the voltage detected at the gate to the reference voltage. 9 . The driver circuit of claim 8 , wherein to determine the load current, the driver circuit is configured to: determine a voltage drop associated with load current based on subtracting the reference voltage from the voltage detected at the gate; and determine the load current based on the voltage drop associated with the load current. 10 . A method performed by a gate driver circuit configured to control a gate injection transistor (GIT), the method comprising: outputting a control current to a gate of the GIT; detecting a voltage at the gate of the GIT; and determining a load current through the GIT based on the voltage detected at the gate of the GIT, wherein the voltage at the gate of the GIT is dependent on both the load current and the control current, wherein determining the load current includes: comparing the voltage detected at the gate to a fixed reference voltage; and determining the load current based on a pre-defined transfer function associated with the GIT, wherein the pre-defined transfer function defines both the load current through the GIT and the control current at the gate when the voltage detected at the gate is greater than a threshold defined in the pre-defined transfer function associated with the GIT. 11 . The method of claim 10 , wherein determining the load current based on the pre-defined function includes: determining a total current though a portion of the GIT based on the voltage detected at the gate; and determining the load current based on a difference between the total current and the control current. 12 . The method of claim 10 , wherein outputting the control current includes: outputting the control current in an initial boost phase, wherein the initial boost phase defines a first gate voltage; and outputting constant current in a drive phase that follows the boost phase, wherein the drive phase defines a second gate voltage that is lower than the first gate voltage, wherein detecting the voltage at the gate of the GIT comprises detecting the second gate voltage. 13 . A method performed by a gate driver circuit configured to control a gate injection transistor (GIT), the method comprising: outputting a control current to a gate of the GIT; detecting a voltage at the gate of the GIT; determining a load current through the GIT based on the voltage detected at the gate of the GIT, wherein the voltage at the gate of the GIT is dependent on both the load current and the control current; and generating a reference voltage based on a voltage drop over a reference structure, wherein generating the reference voltage comprises delivering a second current to the reference structure, wherein the second current matches the control current, wherein the reference structure defines a resistance that matches a resistance of a portion of the GIT, and wherein both the load current and the control current flow through the portion of the GIT. 14 . The method of claim 13 , wherein determining the load current comprises: comparing the voltage detected at the gate to the reference voltage; and determining the load current based on comparing the voltage detected at the gate to the reference voltage. 15 . The method of claim 14 , wherein determining the load current comprises: determining a voltage drop associated with load current based on subtracting the reference voltage from the voltage detected at the gate; and determining the load current based on the voltage drop associated with the load current. 16 . A system comprising: a gate injection transistor (GIT) configured to be controlled by a current signal

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What does patent US12480980B2 cover?
This disclosure describes a driver circuit configured to control a gate injection transistor (GIT). The driver circuit is configured to output a control current to a gate of the GIT, detect a voltage at the gate of the GIT, and determine a load current through the GIT based on the voltage detected at the gate of the GIT. The voltage at the gate of the GIT may be dependent on both the load curre…
Who is the assignee on this patent?
Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification G01R19/16533. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 25 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).