Temperature sensor, sensor element and manufacturing method of temperature sensor
US-2021215549-A1 · Jul 15, 2021 · US
Temperature sensor element and method for manufacturing temperature sensor element
US12480820B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12480820-B2 |
| Application number | US-202017628500-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 17, 2020 |
| Priority date | Oct 3, 2019 |
| Publication date | Nov 25, 2025 |
| Grant date | Nov 25, 2025 |
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- Title
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- Abstract
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Abstract
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A temperature sensor element includes: an element main body including a heat sensitive body including a thermistor sintered body of which the electrical characteristics change with temperature, and a pair of lead wires that is connected to the heat sensitive body through electrodes; and a protective layer that protects the heat sensitive body. The protective layer has an inner protective layer covering the heat sensitive body and an outer protective layer covering the outer side of the inner protective layer. The inner protective layer is formed of an aggregate of particles that are chemically stable with respect to the thermistor sintered body and made of non-metal.
First claim
Opening claim text (preview).
The invention claimed is: 1 . A temperature sensor element comprising: a heat sensitive body including a thermistor sintered body of which electrical characteristics change with temperature; a pair of lead wires connected to the heat sensitive body through electrodes; and a protective layer covering the heat sensitive body, wherein the protective layer has an inner protective layer covering the heat sensitive body and an outer protective layer covering and contacting an entire outer periphery of the inner protective layer, wherein the inner protective layer is formed of an aggregate of particles that are chemically stable with respect to the thermistor sintered body and made of non-metal, wherein the particles forming the aggregate undergo positional shift relative to one another under thermal stress from the outer protective layer, wherein the outer protective layer holds the inner protective layer, and wherein the inner protective layer does not comprise glass, and has a density less than or equal to 60% of a density of the thermistor sintered body. 2 . The temperature sensor element according to claim 1 , wherein a filling rate of the particles in the inner protective layer is 88% or less. 3 . The temperature sensor element according to claim 2 , wherein the aggregate of the inner protective layer includes one or two or more of oxide particles, carbide particles, nitride particles, and boride particles. 4 . The temperature sensor element according to claim 3 , wherein the aggregate of the inner protective layer includes thermistor particles having the same composition as the thermistor sintered body. 5 . The temperature sensor element according to claim 2 , wherein the aggregate of the inner protective layer includes thermistor particles having the same composition as the thermistor sintered body. 6 . The temperature sensor element according to claim 1 , wherein the aggregate of the inner protective layer includes one or two or more of oxide particles, carbide particles, nitride particles, and boride particles. 7 . The temperature sensor element according to claim 6 , wherein the aggregate of the inner protective layer includes thermistor particles having the same composition as the thermistor sintered body. 8 . The temperature sensor element according to claim 1 , wherein the aggregate of the inner protective layer includes thermistor particles having the same composition as the thermistor sintered body. 9 . The temperature sensor element according to claim 1 , wherein the outer protective layer holds the inner protective layer to maintain a shape of the inner protective layer. 10 . A manufacturing method of a temperature sensor element including a heat sensitive body including a thermistor sintered body of which electrical characteristics change with temperature, a pair of lead wires connected to the heat sensitive body through electrodes, and a protective layer covering the heat sensitive body, the manufacturing method comprising: a first step of providing an inner protective layer that covers the heat sensitive body; and a second step of providing an outer protective layer that covers and contacts an entire outer periphery of the inner protective layer, wherein, in the first step, the inner protective layer formed of an aggregate of particles that are chemically stable with respect to the thermistor sintered body and made of non-metal is provided, wherein the particles forming the aggregate undergo positional shift relative to one another under thermal stress from the outer protective layer, wherein the outer protective layer holds the inner protective layer, and wherein the inner protective layer does not comprise glass and has a density less than or equal to 60% of a density of the thermistor sintered body. 11 . The method according to claim 10 , wherein the outer protective layer holds the inner protective layer to maintain a shape of the inner protective layer.
Assignees
Inventors
Classifications
having negative temperature coefficient · CPC title
plural layers surrounding the resistive element (H01C1/028 takes precedence) · CPC title
the element being a non-linear resistance, e.g. thermistor (G01K7/26 takes precedence) · CPC title
Carbonates · CPC title
Aluminium nitrides · CPC title
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Frequently asked questions
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- What does patent US12480820B2 cover?
- A temperature sensor element includes: an element main body including a heat sensitive body including a thermistor sintered body of which the electrical characteristics change with temperature, and a pair of lead wires that is connected to the heat sensitive body through electrodes; and a protective layer that protects the heat sensitive body. The protective layer has an inner protective layer …
- Who is the assignee on this patent?
- Shibaura Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G01K1/10. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 25 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).