Alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in HVPE growth manner and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-12480222-B2
Application number	US-202318224396-A
Country	US
Kind code	B2
Filing date	Jul 20, 2023
Priority date	Nov 11, 2022
Publication date	Nov 25, 2025
Grant date	Nov 25, 2025

Abstract

Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, and a method for manufacturing the same, in which a nitride-based nitride film pattern is formed on an alpha gallium oxide thin-film so as to expose only a selected area thereof, and re-growth is performed only on the partially exposed area thereof, thereby forming a high-quality patterned alpha gallium oxide re-growth pattern.

First claim

What is claimed is:

1 . A method for manufacturing an alpha gallium oxide thin-film structure having high conductivity using selective area growth in a HVPE (halide vapor phase epitaxy) growth manner, the method comprising:
providing a substrate; forming an alpha gallium oxide thin-film on an upper surface of the substrate in a HVPE growth manner; forming a nitride film pattern on the substrate and the alpha gallium oxide thin-film so as to expose only a selected area of the alpha gallium oxide thin-film; and performing re-growth in a HVPE growth manner using a portion of the alpha gallium oxide thin-film located in the exposed selected area as a seed, thereby forming an alpha gallium oxide re-growth pattern, wherein
the alpha gallium oxide thin-film is re-heated while the exposed selected area thereof is exposed to an inert gas atmosphere; and
the re-growth in the HVPE growth manner is carried out using the re-heated alpha gallium oxide thin-film as the seed to form the alpha gallium oxide re-growth pattern.

2 . The method of claim 1 , wherein the formation of the alpha gallium oxide thin-film is carried out under a source temperature in a range of 450 to 650° C. and a growth temperature in a range of 400 to 600° C. and under an inert gas atmosphere.

3 . The method of claim 2 , wherein the formation of the alpha gallium oxide thin-film is carried out using a deposition gas containing HCl and O 2 , wherein a supply flow rate of HCl is in a range of 5 to 50 sccm, and a supply flow rate of O 2 is in a range of 100 to 1,000 sccm.

4 . The method of claim 1 , wherein the nitride film pattern is made of Si 3 N 4 .

5 . The method of claim 4 , wherein the nitride film pattern has an opening defined therein so as to expose the selected area, wherein the alpha gallium oxide re-growth pattern is formed in the opening.

6 . The method of claim 1 , wherein the alpha gallium oxide thin-film is re-heated for 3 to 6 minutes.

7 . The method of claim 1 , wherein the re-growth in the HVPE growth manner is carried out under a source temperature in a range of 450 to 650° C. and a growth temperature in a range of 400 to 600° C. and under the inert gas atmosphere.

8 . The method of claim 7 , wherein the re-growth in the HVPE growth manner is carried out for 1 to 7 minutes.

9 . The method of claim 1 , wherein during performing the re-growth in the HVPE growth manner, the alpha gallium oxide re-growth pattern is deposited on the selected area of the alpha gallium oxide thin-film and is electrically directly connected to the alpha gallium oxide thin-film.

10 . The method of claim 1 , wherein the method further comprises removing the nitride film pattern from the substrate on which the alpha gallium oxide thin-film and the alpha gallium oxide re-growth pattern have been formed in a lift-off process.

11 . An alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, the alpha gallium oxide thin-film structure comprising:
a substrate; an alpha gallium oxide thin-film formed on an upper surface of the substrate; and an alpha gallium oxide re-growth pattern deposited only on a selected area of the alpha gallium oxide thin-film, wherein the alpha gallium oxide thin-film structure is free of a nitride film pattern used as a mask.

12 . The alpha gallium oxide thin-film structure of claim 11 , wherein the alpha gallium oxide re-growth pattern is electrically directly connected to the alpha gallium oxide thin-film.

13 . The alpha gallium oxide thin-film structure of claim 11 , wherein the alpha gallium oxide re-growth pattern has a thickness of 200 nm to 300 nm.

Assignees

• Korea Inst Ceramic Eng & Tech
• Electronics & Telecommunications Res Inst

Inventors

• Jeon Dae-Woo
• Park Ji-Hyeon
• Mun Jae-Kyoung

Classifications

• C30B25/165

  the flow of the reactive gases · CPC title

• C30B29/16 Primary

  Oxides · CPC title

• C30B29/38

  Nitrides · CPC title

• C30B25/10

  Heating of the reaction chamber or the substrate · CPC title

• C30B25/22

  Sandwich processes · CPC title