Light-emitting layer for perovskite light-emitting device, method for manufacturing same, and perovskite light-emitting device using same
US-2017358759-A1 · Dec 14, 2017 · US
US12480045B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12480045-B2 |
| Application number | US-202217650582-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 10, 2022 |
| Priority date | Feb 10, 2021 |
| Publication date | Nov 25, 2025 |
| Grant date | Nov 25, 2025 |
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Described herein are spin polarized light emitting diodes (LEDs) and methods of making the same. Spin polarization is achieved via chiral induced spin selectivity where, for example, a stereochemically active cation is included in a perovskite to form the conductive layer of an LED device. Advantageously, the devices and methods described herein allow for spin polarization at room temperature and without application of a magnetic field or ferromagnetic contacts, in contrast to other described spin selective LEDs.
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What is claimed is: 1 . A light emitting diode comprising: a perovskite conductive layer comprising stereochemically-selected cations, wherein said stereochemically-selected cations enable a spin-polarized light emitting diode capable of generating a circularly-polarized electroluminescence; a perovskite nanocrystal emitting layer in electronic communication with said perovskite conductive layer; wherein said perovskite nanocrystal emitting layer comprises CsPbI nanocrystals, CsPbBr nanocrystals or a combination thereof. 2 . The light emitting diode of claim 1 further comprising an anode layer in electronic communication with said perovskite conductive layer. 3 . The light emitting diode of claim 1 further comprising a cathode layer in electronic communication with said perovskite nanocrystal emitting layer. 4 . The light emitting diode of claim 1 , wherein said perovskite conductive layer comprises a metal-halide perovskite. 5 . The light emitting diode of claim 1 , wherein said perovskite conductive layer comprises lead iodide. 6 . The light emitting diode of claim 1 , wherein said stereochemically-selected cations comprise R or S organic molecules. 7 . The light emitting diode of claim 1 , wherein said stereochemically-selected cations comprise R or S methylbenzylammonium. 8 . The light emitting diode of claim 1 , wherein at least 75% of said stereochemically-selected cations are the same enantiomer. 9 . The light emitting diode of claim 1 , wherein said perovskite conductive layer is solution processed. 10 . The light emitting diode of claim 1 , wherein said perovskite nanocrystal emitting layer comprises nanocrystals with an average diameter less than or equal to 25 nm. 11 . The light emitting diode of claim 1 , wherein said perovskite nanocrystal emitting layer is deposited on a surface of said perovskite conductive layer via spin coating. 12 . The light emitting diode of claim 2 , wherein said perovskite conductive layer is deposited on a surface of said anode layer via spin coating. 13 . The light emitting diode of claim 12 , wherein said perovskite conductive layer is deposited on a surface of said anode layer to form a horizontally oriented organic/inorganic multiple quantum well configuration. 14 . The light emitting diode of claim 1 , wherein said spin-polarized light emitting diode generates circularly-polarized electroluminescence at 25° C. 15 . The light emitting diode of claim 1 , wherein said spin-polarized light emitting diode generates circularly-polarized electroluminescence without application of a magnetic field or ferromagnetic contacts. 16 . The light emitting diode of claim 1 , wherein said spin polarized light emitting diode achieves a circularly-polarized electroluminescence having polarization greater than or equal to ±1.0%. 17 . A light emitting diode comprising: a metal-halide perovskite conductive layer comprising stereochemically-selected cations; a perovskite nanocrystal emitting layer in electronic communication with said metal-halide perovskite layer; an anode layer in electronic communication with said metal-halide perovskite layer; and a cathode layer in electronic communication with said perovskite nanocrystal emitting layer; wherein said perovskite nanocrystal emitting layer comprises CsPbI nanocrystals, CsPbBr nanocrystals or a combination thereof. 18 . The light emitting diode of claim 17 , wherein said stereochemically-selected cations enable a spin-polarized light emitting diode capable of generating a circularly-polarized electroluminescence.
Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title
Arrangements for polarized light emission (H10K50/86 takes precedence) · CPC title
Constructional details relating to the organic devices covered by this subclass · CPC title
Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title
comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title
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