Semiconductor device and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-12477809-B2
Application number	US-202217816772-A
Country	US
Kind code	B2
Filing date	Aug 2, 2022
Priority date	Sep 1, 2021
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include preparing a structure body, the structure body including a silicon carbide member and a first film stacked with the silicon carbide member. The first film includes silicon and oxygen. The method can include performing a first treatment of heat-treating the structure body in a first atmosphere including hydrogen. The method can include, after the first treatment, performing a second treatment of heat-treating the structure body in a second atmosphere including nitrogen and oxygen. An oxygen concentration in the second atmosphere is not less than 5 ppm and not more than 1000 ppm.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a silicon carbide member; and a first film stacked with the silicon carbide member, the first film including silicon and oxygen, a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value, a C—N concentration of a bond of carbon and nitrogen at a second position in the first direction being a second peak value, at a third position in the first direction, the C—N concentration being 1/2800 of the second peak value, and the Si—N concentration at the third position being less than 1/20 of the first peak value.

2 . A semiconductor device, comprising:
a silicon carbide member; and a first film stacked with the silicon carbide member, the first film including silicon and oxygen, a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value, the first peak value being 1.7×10 21 /cm 3 or more, a C—N concentration of a bond of carbon and nitrogen at a second position in the first direction being a second peak value, a C—N concentration at a third position in the first direction being 1/2800 of the second peak value, and a Si—N concentration at the third position being 1.0×10 20 /cm 3 or less.

3 . A semiconductor device, comprising:
a silicon carbide member; and a first film stacked with the silicon carbide member, the first film including silicon and oxygen, a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value, at a fourth position in the first direction, a concentration of silicon being a minimum value in the first film, and a Si—N concentration at the fourth position being less than 1/20 of the first peak value.

4 . A semiconductor device, comprising:
a silicon carbide member; and a first film stacked with the silicon carbide member, the first film including silicon and oxygen, a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value, the first peak value being 1.7×10 21 /cm 3 or more, at a fourth position in the first direction, a silicon concentration being a minimum value in the first film, and a Si—N concentration at the fourth position being 1.0×10 20 /cm 3 or less.

5 . A semiconductor device, comprising:
a silicon carbide member; and a first film stacked with the silicon carbide member, the first film including silicon and oxygen, a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value, at a fifth position in the first direction, an oxygen concentration being a minimum value in the first film, and a Si—N concentration at the fifth position being less than 1/20 of the first peak value.

6 . A semiconductor device, comprising:
a silicon carbide member; and a first film stacked with the silicon carbide member, the first film including silicon and oxygen, a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value, the first peak value being 1.7×10 21 /cm 3 , at a fifth position in the first direction, an oxygen concentration being a minimum value in the first film, and a Si—N concentration at the fifth position being 1.0×10 20 /cm 3 or less.

7 . A semiconductor device, comprising:
a silicon carbide member; and a first film stacked with the silicon carbide member, the first film including silicon and oxygen, a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value, a Si—N concentration at a sixth position in the first direction being less than 1/20 of the first peak value, the sixth position being in the first film, and a distance between the first position and the sixth position in the first direction being 10 nm.

8 . A semiconductor device, comprising:
a silicon carbide member; and a first film stacked with the silicon carbide member, the first film including silicon and oxygen, a Si—N concentration of a bond of silicon and nitrogen at a first position in a first direction from the silicon carbide member to the first film being a first peak value, the first peak value is 1.7×10 21 /cm 3 , a Si—N concentration at a sixth position in the first direction being 1.0×10 20 /cm 3 or less, the sixth position being in the first film, and a distance between the first position and the sixth position in the first direction being 10 nm.

9 . The device according to claim 1 , further comprising a first conductive film, and
the first film being provided between the silicon carbide member and the first conductive film.

Assignees

• Toshiba Kk

Inventors

• Fukatsu Shigeto
• Nakabayashi Yukio
• Shimizu Tatsuo
• Iijima Ryosuke

Classifications

• H10D64/01366

  the semiconductor being silicon carbide · CPC title

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D30/66 Primary

  Vertical DMOS [VDMOS] FETs · CPC title

• H10D12/031

  of IGBTs · CPC title