Semiconductor device having sensing element

Patent metadata

Field	Value
Publication number	US-12477774-B2
Application number	US-202318158689-A
Country	US
Kind code	B2
Filing date	Jan 24, 2023
Priority date	Mar 29, 2022
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

A semiconductor device includes a main element and a sensing element each including a drift region of a first conductivity-type, a well region of a second conductivity-type provided at an upper part of the drift region, a first main electrode region of the first conductivity-type provided at an upper part of the well region, a gate electrode buried with a gate insulating film interposed in a trench, and a main electrode connected to the first main electrode region, the isolation region including an element-isolation insulating film provided on a top surface of a semiconductor base body interposed between the well regions, and a first wire provided on a top surface of the element-isolation insulating film and electrically connected to the main electrode of the main element.

First claim

The invention claimed is:

1 . A semiconductor device comprising:
a main element; a sensing element configured to detect a current of the main element; and an isolation region isolating the main element and the sensing element from each other, each of the main element and the sensing element including
a drift region of a first conductivity-type provided in a semiconductor base body,
a well region of a second conductivity-type provided at an upper part of the drift region,
a first main electrode region of the first conductivity-type provided at an upper part of the well region,
a gate electrode buried with a gate insulating film interposed in a trench in contact with the first main electrode region, the well region, and the drift region, and
a main electrode electrically connected to the first main electrode region,
the isolation region including
an element-isolation insulating film provided on a top surface of the semiconductor base body interposed between the well region of the main element and the well region of the sensing element, and
a first wire provided on a top surface of the element-isolation insulating film and electrically connected to the main electrode of the main element.

2 . The semiconductor device of claim 1 , wherein the first wire is isolated from each of a first gate wire connected to the gate electrode of the main element and a second gate wire connected to the gate electrode of the sensing element.

3 . The semiconductor device of claim 1 , wherein the main electrode of the main element extends onto the first wire so that the first wire is connected to the main electrode of the main element via a first contact.

4 . The semiconductor device of claim 2 , further comprising a gate runner connected to the first gate wire via a second contact and connected to the second gate wire via a third contact.

5 . The semiconductor device of claim 1 , further comprising a diode having a cathode connected to the first main electrode region of the main element and an anode connected to the first main electrode region of the sensing element.

6 . The semiconductor device of claim 1 , further comprising a diode having a cathode connected to the second main electrode region of the main element.

Assignees

• Fuji Electric Co Ltd

Inventors

• Abe Yuya

Classifications

• H10D84/144

  in antiparallel diode configurations · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title

• H10D30/668 Primary

  having trench gate electrodes, e.g. UMOS transistors · CPC title

• H10D30/669 Primary

  having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells · CPC title

• H10D64/117

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title